BUK7575-100A

BUK7575-100A N-channel TrenchMOS standard level FET Rev. 02 — 30 July 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V, 24 V and 42 V loads Automotive and general purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3 Tmb = 25 °C; see Figure 2 Min Typ Max 100 23 99 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 13 A; Tj = 175 °C; see Figure 12 and 13 VGS = 10 V; ID = 13 A; Tj = 25 °C; see Figure 12 and 13 187 mΩ ID = 14 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped 100 mJ - 64 75 mΩ NXP Semiconductors BUK7575-100A N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain mb D Simplified outline Graphic symbol G mbb076 S 123 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BUK7575-100A TO-220AB Description Version plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78A TO-220AB Type number BUK7575-100A_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 30 July 2009 2 of 13 NXP Semiconductors BUK7575-100A N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Tmb = 25 °C; see Figure 2 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 -55 -55 Max 100 100 20 23 16.2 92 99 175 175 23 92 100 Unit V V V A A A W °C °C A A mJ In accordance with the Absolute Maximum Rating System (IEC 60134). Source-drain diode Avalanche ruggedness non-repetitive ID = 14 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; drain-source avalanche Tj(init) = 25 °C; unclamped energy 120 Ider (%) 80 03aa24 120 Pder (%) 80 03na19 40 40 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 Fig 1. Normalized continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature BUK7575-100A_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 30 July 2009 3 of 13 NXP Semiconductors BUK7575-100A N-channel TrenchMOS standard level FET 103 P 03nb34 ID (A) 102 RDSon = VDS/ID tp T δ= tp T t tp = 10 us 100 us 10 D.C. 1 ms 10 ms 100 ms 1 1 10 102 VDS (V) 103 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7575-100A_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 30 July 2009 4 of 13 NXP Semiconductors BUK7575-100A N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ Max 1.5 Unit K/W thermal resistance from see Figure 4 junction to mounting base thermal resistance from junction to ambient Rth(j-a) - 60 - K/W 10 Zth(j-mb) (K/W) 1 03nb35 δ = 0.5 0.2 0.1 P δ= tp T 10−1 0.05 0.02 tp t T 10−2 10−6 Single Shot 10−5 10−4 10−3 10−2 10−1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7575-100A_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 30 July 2009 5 of 13 NXP Semiconductors BUK7575-100A N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = 25 °C ID = 0.25 mA; VGS = 0 V; Tj = -55 °C ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11 ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11 ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 100 V; VGS = 0 V; Tj = 175 °C VDS = 100 V; VGS = 0 V; Tj = 25 °C VDS = 0 V; VGS = 20 V; Tj = 25 °C VDS = 0 V; VGS = -20 V; Tj = 25 °C VGS = 10 V; ID = 13 A; Tj = 175 °C; see Figure 12 and 13 VGS = 10 V; ID = 13 A; Tj = 25 °C; see Figure 12 and 13 Dynamic characteristics Ciss Coss Crss td(on) tr td(off) tf LD input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance from drain lead 6 mm from package to centre of die; Tj = 25 °C from contact screw on mounting base to centre of die; Tj = 25 °C LS internal source inductance source-drain voltage reverse recovery time recovered charge from source lead to source bond pad; Tj = 25 °C IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 14 IS = 13 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V; Tj = 25 °C VDS = 30 V; RL = 2.2 Ω; VGS = 10 V; RG(ext) = 5.6 Ω; Tj = 25 °C VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15 907 127 78 8 39 26 24 4.5 3.5 7.5 1210 150 110 pF pF pF ns ns ns ns nH nH nH Min 100 89 1 2 Typ 3 0.05 2 2 64 Max 4.4 4 500 10 100 100 187 75 Unit V V V V V µA µA nA nA mΩ mΩ Static characteristics Source-drain diode VSD trr Qr 0.85 64 120 1.2 V ns nC BUK7575-100A_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 30 July 2009 6 of 13 NXP Semiconductors BUK7575-100A N-channel TrenchMOS standard level FET 60 ID (A) 50 VGS (V) = 8 9 10 03nb31 20 7.5 RDSon (mΩ) 90 85 80 03nb30 40 6.5 30 75 70 65 5.5 60 10 55 4.5 0 0 2 4 6 8 VDS (V) 10 50 5 10 15 VGS (V) 20 20 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 03aa35 Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values 20 03nb28 10−1 ID (A) 10−2 min typ max gfs (S) 15 10−3 10 10−4 10−5 5 10−6 0 2 4 VGS (V) 6 0 0 10 20 30 ID (A) 40 Fig 7. Sub-threshold drain current as a function of gate-source voltage Fig 8. Forward transconductance as a function of drain current; typical values BUK7575-100A_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 30 July 2009 7 of 13 NXP Semiconductors BUK7575-100A N-channel TrenchMOS standard level FET ID (A) 35 30 03nb29 10 VGS (V) 9 8 03nb27 25 20 15 10 Tj = 175 °C 5 Tj = 25 °C 7 6 5 4 3 2 1 VDS = 14 V VDS = 80 V 0 0 2 4 6 VGS (V) 8 0 0 10 20 QG (nC) 30 Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values 5 03aa32 Fig 10. Gate-source voltage as a function of turn-on gate charge; typical values 120 RDSon (mΩ) VGS (V)= 5.5 6 6.5 7 8 10 03nb32 VGS(th) (V) 4 max 100 3 typ 80 2 min 60 1 0 −60 40 0 60 120 Tj (°C) 180 0 10 20 30 40 ID (A) 50 Fig 11. Gate-source threshold voltage as a function of junction temperature Fig 12. Drain-source on-state resistance as a function of drain current; typical values BUK7575-100A_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 30 July 2009 8 of 13 NXP Semiconductors BUK7575-100A N-channel TrenchMOS standard level FET 3 03aa29 IS 45 (A) 40 35 03nb26 a 2 30 25 20 1 15 10 5 Tj = 175 °C Tj = 25 °C 0 -60 0 0 60 120 Tj (°C) 180 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (V) Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature 2000 C (pF) 1800 1600 1400 1200 Coss 1000 800 Crss 600 400 200 0 10−2 10−1 1 Fig 14. Reverse diode current as a function of reverse diode voltage; typical values 03nb33 Ciss 10 VDS(V) 102 Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK7575-100A_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 30 July 2009 9 of 13 NXP Semiconductors BUK7575-100A N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78A E p A A1 q D1 mounting base D L1(1) L2 Q L b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.6 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1(1) 3.30 2.79 L2 max. 3.0 p 3.8 3.6 q 3.0 2.7 Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78A REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 03-01-22 05-03-14 Fig 16. Package outline SOT78A (TO-220AB) BUK7575-100A_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 30 July 2009 10 of 13 NXP Semiconductors BUK7575-100A N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Release date 20090730 Data sheet status Product data sheet Change notice Supersedes BUK7575_7675_100A-01 Document ID BUK7575-100A_2 Modifications: • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK7575-100A separated from data sheet BUK7575_7675_100A-01. Product specification - BUK7575_7675_100A-01 20001024 (9397 750 07623) BUK7575-100A_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 30 July 2009 11 of 13 NXP Semiconductors BUK7575-100A N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BUK7575-100A_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 30 July 2009 12 of 13 NXP Semiconductors BUK7575-100A N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 30 July 2009 Document identifier: BUK7575-100A_2