MRF6S20010NR1

Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 4, 1/2014 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.  Typical Two--Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain — 15.5 dB Drain Efficiency — 36% IMD — --34 dBc  Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (2130--2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability Power Gain — 15.5 dB Drain Efficiency — 15% IM3 @ 10 MHz Offset — --47 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --49 dBc in 3.84 MHz Channel Bandwidth  Typical Single--Carrier N--CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930--1990 MHz), IS--95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 16% ACPR @ 885 kHz Offset = --60 dBc in 30 kHz Bandwidth  Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 4 Watts Avg., Full Frequency Band (1805--1880 MHz) Power Gain — 16 dB Drain Efficiency — 33% EVM — 1.3% rms  Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW Output Power Features  Characterized with Series Equivalent Large--Signal Impedance Parameters  Internally Matched for Ease of Use  Qualified Up to a Maximum of 32 VDD Operation  Integrated ESD Protection  225C Capable Plastic Package  In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel. 1600--2200 MHz, 10 W, 28 V GSM, GSM EDGE SINGLE N--CDMA 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs TO--270--2 PLASTIC MRF6S20010NR1 TO--270G--2 PLASTIC MRF6S20010GNR1 RFin/VGS 2 1 RFout/VDS (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +12 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature TC 150 C Operating Junction Temperature (1,2) TJ 225 C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.  Freescale Semiconductor, Inc., 2005--2006, 2008--2009, 2014. All rights reserved. RF Device Data Freescale Semiconductor 1 Table 2. Thermal Characteristics Characteristic Symbol Thermal Resistance, Junction to Case Case Temperature 78C, 1 W CW Case Temperature 79C, 10 W PEP, Two--Tone Test Value (1,2) RJC Unit C/W 2.3 2.9 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 500 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 40 Adc) VGS(th) 1.5 2.2 3.5 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 130 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.4 Adc) VDS(on) — 0.33 0.4 Vdc Output Capacitance (VDS = 28 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 20 — pF Reverse Transfer Capacitance (VDS = 28 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 11.6 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz) Ciss — 120 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (3) Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP, f1 = 2170 MHz, f2 = 2170.1 MHz, Two--Tone Test Power Gain Gps 14 15.5 17 dB Drain Efficiency D 33 36 — % Intermodulation Distortion IMD — --34 --28 dBc Input Return Loss IRL — --15 --9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Part internally matched on input. 4. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. (continued) MRF6S20010NR1 MRF6S20010GNR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical 2--Carrier W--CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps — 15.5 — dB Drain Efficiency D — 15 — % Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW GF — 0.3 — dB Intermodulation Distortion IM3 — --47 — dBc ACPR — --49 — dBc Adjacent Channel Power Ratio Typical N--CDMA Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., 1930 MHz