PBSS5160V

PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistors BCP52 and BCX52 1.3 Applications Major application segments Automotive Telecom infrastructure Industrial Power management DC-to-DC conversion Supply line switching Peripheral driver Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance IC = −1 A; IB = −100 mA Conditions open base [1] Min - Typ 220 Max −60 −1 −2 330 Unit V A A mΩ Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint. NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1, 2, 5, 6 3 4 Pinning Description collector base emitter 6 5 4 3 4 1 2 3 sym030 Simplified outline Symbol 1, 2, 5, 6 3. Ordering information Table 3. Ordering information Package Name PBSS5160V Description plastic surface mounted package; 6 leads Version SOT666 Type number 4. Marking Table 4. Marking codes Marking code 51 Type number PBSS5160V 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tamb Tstg PBSS5160V_3 Parameter collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current Conditions open base open collector [1] [2] Min - Max −80 −60 −5 −0.9 −1 −2 −300 −1 300 500 150 +150 +150 Unit V V V A A A mA A mW mW °C °C °C collector-base voltage open emitter t = 1 ms or limited by Tj(max) tp ≤ 300 μs; δ ≤ 0.02 [1] [2] −65 −65 total power dissipation Tamb ≤ 25 °C junction temperature ambient temperature storage temperature © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 14 December 2009 2 of 14 NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor [1] [2] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on a FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad. 0.6 Ptot (W) (1) 001aaa714 0.4 (2) 0.2 0 0 40 80 120 160 Tamb (°C) (1) FR4 PCB; 1 cm2 collector mounting pad (2) FR4 PCB; standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] Min - Typ - Max 415 250 Unit K/W K/W [1] [2] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on a FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad. PBSS5160V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 14 December 2009 3 of 14 NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 001aaa715 10 (8) (9) (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 PCB; standard footprint (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig 2. Transient thermal impedance as a function of pulse time; typical values PBSS5160V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 14 December 2009 4 of 14 NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current Conditions VCB = −60 V; IE = 0 A VCB = −60 V; IE = 0 A; Tj = 150 °C ICES IEBO hFE collector-emitter cut-off current emitter-base cut-off current DC current gain VCE = −60 V; VBE = 0 V VEB = −5 V; IC = 0 A VCE = −5 V; IC = −1 mA VCE = −5 V; IC = −500 mA VCE = −5 V; IC = −1 A VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −1 mA IC = −500 mA; IB = −50 mA IC = −1 A; IB = −100 mA VBEsat RCEsat VBEon td tr ton ts tf toff fT Cc base-emitter saturation voltage equivalent on-resistance base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency collector capacitance Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [1] [1] [1] Min 200 150 100 [1] Typ 350 250 160 −110 −120 −220 −0.95 220 −0.82 11 30 41 205 55 260 220 9 Max −100 −50 −100 −100 −160 −175 −330 −1.1 330 −0.9 15 Unit nA μA nA nA mV mV mV V mΩ V ns ns ns ns ns ns MHz pF IC = −1 A; IB = −50 mA IC = −1 A; IB = −100 mA IC = −1 A; VCE = −5 V VCC = −10 V; IC = −0.5 A; IBon = −0.025 A; IBoff = 0.025 A - IC = −50 mA; VCE = −10 V; f = 100 MHz IE = ie = 0 A; VCB = −10 V; f = 1 MHz 150 - [1] PBSS5160V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 14 December 2009 5 of 14 NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor 600 hFE 001aaa719 −1.2 VBE (V) −0.8 (1) 001aaa717 (1) 400 (2) (2) (3) 200 (3) −0.4 0 −10−1 −1 −10 −102 −103 −104 IC (mA) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C VCE = −5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 3. DC current gain as a function of collector current; typical values 001aaa718 Fig 4. Base-emitter voltage as a function of collector current; typical values 001aaa721 −10 VCEsat (V) −1 −10 VCEsat (V) −1 −10−1 (1) (2) (3) −10−1 (1) (2) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values PBSS5160V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 14 December 2009 6 of 14 NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor −1.2 VBEsat (V) (1) 001aaa722 −1.2 VBEsat (V) (1) 001aaa723 −0.8 (2) (3) −0.8 (2) (3) −0.4 −0.4 0 −10−1 −1 −10 −102 −103 −104 IC (mA) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 7. Base-emitter saturation voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector-current; typical values PBSS5160V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 14 December 2009 7 of 14 NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor −2 IC (A) −1.6 (5) (4) (3) (2) 001aaa716 (1) 103 RCEsat (Ω) 102 001aaa720 (6) (7) (6) (8) −1.2 (9) (9) 10 (1) (2) −0.8 (10) −0.4 1 (3) 0 0 −1 −2 −3 −4 −5 VCE (V) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C (1) IB = −40 mA (2) IB = −36 mA (3) IB = −32 mA (4) IB = −28 mA (5) IB = −24 mA (6) IB = −20 mA (7) IB = −16 mA (8) IB = −12 mA (9) IB = −8 mA (10) IB = −4 mA IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 9. Collector current as a function of collector-emitter voltage; typical values Fig 10. Equivalent on-resistance as a function of collector current; typical values PBSS5160V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 14 December 2009 8 of 14 NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor − IB 90 % input pulse (idealized waveform) − I Bon (100 %) 10 % − I Boff − IC 90 % output pulse (idealized waveform) − I C (100 %) 10 % t td t on tr ts t off tf 006aaa266 Fig 11. BISS transistor switching time definition VBB VCC RB (probe) oscilloscope 450 Ω VI R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope mgd624 VCC = −10 V; IC = −0.5 A; IBon = −0.025 A; IBoff = 0.025 A Fig 12. Test circuit for switching times PBSS5160V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 14 December 2009 9 of 14 NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor 8. Package outline Plastic surface-mounted package; 6 leads SOT666 D A E X S YS HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 wMA Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 13. Package outline SOT666 PBSS5160V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 14 December 2009 10 of 14 NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS5160V [1] Package SOT666 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 -115 For further information and the availability of packing methods, see Section 12. PBSS5160V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 14 December 2009 11 of 14 NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor 10. Revision history Table 9. Revision history Release date 20091214 Data sheet status Product data sheet Change notice Supersedes PBSS5160V_2 Document ID PBSS5160V_3 Modifications: • • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Figure 13 “Package outline SOT666”: updated Product data sheet Objective data sheet PBSS5160V_1 - PBSS5160V_2 PBSS5160V_1 20050404 20040420 PBSS5160V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 14 December 2009 12 of 14 NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor 11. Legal information 11.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBSS5160V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 14 December 2009 13 of 14 NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 December 2009 Document identifier: PBSS5160V_3