2N4403TA

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N4403 / MMBT4403 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. C E TO-92 SOT-23 EBC Mark:2T Figure 1. 2N4403 Device Package B Figure 2. MMBT4403 Device Package Ordering Information Part Number Marking Package Packing Method 2N4403BU 2N4403 TO-92 3L Bulk 2N4403TF 2N4403 TO-92 3L Tape and Reel 2N4403TFR 2N4403 TO-92 3L Tape and Reel 2N4403TA 2N4403 TO-92 3L Ammo 2N4403TAR 2N4403 TO-92 3L Ammo MMBT4403 2T SOT-23 3L Tape and Reel © 2001 Fairchild Semiconductor Corporation 2N4403 / MMBT4403 Rev. 1.1.1 www.fairchildsemi.com 2N4403 / MMBT4403 — PNP General-Purpose Amplifier July 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V -600 mA -55 to +150 °C IC TJ, TSTG Parameter Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Max. Parameter Unit 2N4403(3) MMBT4403(4) Total Device Dissipation 625 350 mW Derate Above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 PD °C/W 357 °C/W Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. © 2001 Fairchild Semiconductor Corporation 2N4403 / MMBT4403 Rev. 1.1.1 www.fairchildsemi.com 2 2N4403 / MMBT4403 — PNP General-Purpose Amplifier Absolute Maximum Ratings(1),(2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -1.0 mA, IB = 0 -40 V V(BR)CBO Collector-Base Breakdown Voltage IC = -0.1 mA, IE = 0 -40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -0.1 mA, IC = 0 -5.0 V Base Cut-Off Current VCE = -35 V, VEB = -0.4 V -0.1 μA Collector Cut-Off Current VCE = -35 V, VEB = -0.4 V -0.1 μA IBL ICEX On Characteristics IC = -0.1 mA, VCE = -1.0 V hFE DC Current Gain IC = -1.0 mA, VCE = -1.0 V 60 IC = -10 mA, VCE = -1.0 V 100 IC = -150 mA, VCE = -2.0 V(5) 100 V(5) 20 IC = -500 mA, VCE = -2.0 VCE(sat) Collector-Emitter Saturation Voltage(5) VBE(sat) Base-Emitter Saturation Voltage 30 300 IC = -150 mA, IB = -15 mA -0.40 IC = -500 mA, IB = -50 mA -0.75 IC = -150 mA, IB = -15 mA(5) -0.75 IC = -500 mA, IB = -50 mA -0.95 -1.30 V V Small Signal Characteristics Current Gain - Bandwidth Product IC = -20 mA, VCE = -10 V, f = 100 MHz Ccb Collector-Base Capacitance VCB = -10 V, IE = 0, f = 140 kHz 8.5 pF Ceb Emitter-Base Capacitance VBE = -0.5 V, IC = 0, f = 140 kHz 30 pF hie Input Impedance IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz 1.5 15.0 kΩ hre Voltage Feedback Ratio IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz 0.1 8.0 x10-4 hfe Small-Signal Current Gain IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz 60 500 hoe Output Admittance IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz 1 100 μmhos VCC = -30 V, IC = -150 mA, IB1 = -15 mA 15 ns 20 ns VCC = -30 V, IC = -150 mA, IB1 = IB2 = -15 mA 225 ns 30 ns fT 200 MHz Switching Characteristics td Delay Time tr Rise Time ts Storage Time tf Fall Time Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2001 Fairchild Semiconductor Corporation 2N4403 / MMBT4403 Rev. 1.1.1 www.fairchildsemi.com 3 2N4403 / MMBT4403 — PNP General-Purpose Amplifier Electrical Characteristics VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 0.5 500 VCE = 5V 400 125 °C 0.3 300 25 °C 200 100 0.3 0.1 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) 1 - 40 °C - 40 °C 0 1 25 °C 0.6 10 100 I C - COLLECTOR CURRE NT (mA) 0.6 125 °C 0.4 β = 10 - 40 °C 25 °C 125°C VCE = 5V 0.2 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 500 0 0.1 1 10 I C - COLLECTOR CURRE NT (mA) 25 Figure 6. Base-Emitter On Voltage vs. Collector Current Figure 5. Base-Emitter Saturation Voltage vs. Collector Current 100 20 CAPACITANCE (pF) V CB = 35V 10 1 0.1 0.01 25 500 1 0.8 0.8 I CBO - COLLE CTOR CURRENT (nA) 125 °C Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current Figure 3. Typical Pulsed Current Gain vs. Collector Current 0.4 25 °C 0.2 - 40 °C 0 0.1 0 β = 10 0.4 50 75 100 T A - AMBIE NT TEMP ERATURE (° C) 12 C ib 8 4 0 0.1 125 C ob 1 10 REVERSE BIAS VOLTAGE (V) 50 Figure 8. Input and Output Capacitance vs. Reverse Bias Voltage Figure 7. Collector Cut-Off Current vs. Ambient Temperature © 2001 Fairchild Semiconductor Corporation 2N4403 / MMBT4403 Rev. 1.1.1 16 www.fairchildsemi.com 4 2N4403 / MMBT4403 — PNP General-Purpose Amplifier Typical Performance Characteristics 250 I B1 = I B2 = I B1 = I B2 = 10 400 V cc = 15 V ts 150 TIME (nS) TIME (nS) 200 500 Ic 100 tr tf V cc = 15 V 300 200 t off 50 100 t on td 0 10 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 1000 1 PD - POWER DISSIPATION (W) I B1 - TURN 0N BASE CURRENT (mA) 50 20 SOT-223 0.75 10 t r = 15 V 5 30 ns TO-92 0.5 SOT-23 0.25 2 60 ns 1 10 100 I C - COLLECTOR CURRENT (mA) 0 500 0 CHAR. RELATIVE TO VALUES AT VCE = -10V 5 hoe 2 h re h fe 1 0.5 h ie 0.2 V CE = -10 V T A = 25 oC 1 _ _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _ 50 50 75 100 TEMPERATURE ( oC) 125 150 1.3 1.2 h re and hoe h re h ie h fe hoe 1.1 1 h ie 0.9 h fe 0.8 -4 I C = -10mA T A = 25oC -8 -12 -16 V CE - COLLECTOR VOLTAGE (V) -20 Figure 14. Common Emitter Characteristics Figure 13. Common Emitter Characteristics © 2001 Fairchild Semiconductor Corporation 2N4403 / MMBT4403 Rev. 1.1.1 25 Figure 12. Power Dissipation vs. Ambient Temperature Figure 11. Rise Time vs. Collector and Turn-On Base Currents CHAR. RELATIVE TO VALUES AT I C= -10mA 100 I C - COLLECTOR CURRENT (mA) Figure 10. Turn-On and Turn-Off Times vs. Collector Current Figure 9. Switching Times vs. Collector Current 0.1_ Ic 10 www.fairchildsemi.com 5 2N4403 / MMBT4403 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) 2N4403 / MMBT4403 — PNP General-Purpose Amplifier CHAR. RELATIVE TO VALUES AT TA = 25oC Typical Performance Characteristics (Continued) 1.5 I C = -10mA 1.4 V = -10 V CE 1.3 1.2 h fe h ie h re hoe 1.1 hoe 1 0.9 0.8 0.7 h re h ie 0.6 0.5 -40 h fe -20 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 Figure 15. Common Emitter Characteristics © 2001 Fairchild Semiconductor Corporation 2N4403 / MMBT4403 Rev. 1.1.1 www.fairchildsemi.com 6 2N4403 / MMBT4403 — PNP General-Purpose Amplifier Physical Dimensions TO-92 3L (Tape and Reel, Ammo) Figure 16. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf. © 2001 Fairchild Semiconductor Corporation 2N4403 / MMBT4403 Rev. 1.1.1 www.fairchildsemi.com 7 2N4403 / MMBT4403 — PNP General-Purpose Amplifier Physical Dimensions (Continued) TO-92 3L (Bulk) D Figure 17. 3-LEAD, JEDEC TO-92 COMPLIANT STRAGHIT LEAD CONFIGURATION (OLD TO92AM3) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf. © 2001 Fairchild Semiconductor Corporation 2N4403 / MMBT4403 Rev. 1.1.1 www.fairchildsemi.com 8 2N4403 / MMBT4403 — PNP General-Purpose Amplifier Physical Dimensions (Continued) SOT-23 3L 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 (0.29) 2 0.95 1.90 2.20 0.60 0.37 0.20 A B 1.90 1.00 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf. © 2001 Fairchild Semiconductor Corporation 2N4403 / MMBT4403 Rev. 1.1.1 www.fairchildsemi.com 9 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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