2N5883

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features http://onsemi.com • Low Collector−Emitter Saturation Voltage − • • • • VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain − hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product − ft = 4.0 MHz (min) at IC = 1.0 Adc Pb−Free Packages are Available* 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 − 80 VOLTS, 200 WATTS MAXIMUM RATINGS (Note 1) Rating TO−204AA (TO−3) CASE 1−07 STYLE 1 ÎÎ ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol VCEO Value 60 80 60 80 Unit Vdc Collector−Emitter Voltage 2N5883, 2N5885 2N5884, 2N5886 Collector−Base Voltage 2N5883, 2N5885 2N5884, 2N5886 VCB Vdc Emitter−Base Voltage Collector Current − Continuous Peak Base Current VEB IC 5.0 25 50 Vdc Adc IB 7.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 200 1.15 W W/°C °C TJ, Tstg – 65 to + 200 MARKING DIAGRAM 2N588xG AYYWW MEX 2N588x G A YY WW MEX THERMAL CHARACTERISTICS Characteristic Symbol qJC Max Unit = Device Code x = 3, 4, 5, or 6 = Pb−Free Package = Assembly Location = Year = Work Week = Country of Origin Thermal Resistance, Junction−to−Case 0.875 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC registered data. Units and conditions differ on some parameters and re−registration reflecting these changes has been requested. All above values most or exceed present JEDEC registered data. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 March, 2006 − Rev. 11 Publication Order Number: 2N5883/D 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) PD, POWER DISSIPATION (WATTS) ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎ Î Î ÎÎÎ Î ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (Note 2) (TC = 25°C unless otherwise noted) Characteristic Collector−Emitter Sustaining Voltage (Note 3) (IC = 200 mAdc, IB = 0) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Symbol Min 60 80 − − − − − − − − − Max − − Unit Vdc 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5984, 2N5886 VCEO(sus) ICEO 2.0 2.0 1.0 1.0 10 10 mAdc Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) ICEX 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5884, 2N5886 mAdc ICBO 2N5883, 2N5885 2N5884, 2N5886 1.0 1.0 1.0 mAdc mAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 25 Adc, VCE = 4.0 Vdc) hFE 35 20 4.0 − − − − − 100 − Collector−Emitter Saturation Voltage (Note 3) (IC = 15 Adc, IB = 1.5 Adc) (IC = 25 Adc, IB = 6.25 Adc) Base−Emitter Saturation Voltage (Note 3) Base−Emitter On Voltage (Note 3) VCE(sat) 1.0 4.0 2.5 1.5 Vdc Vdc Vdc (IC = 25 Adc, IB = 6.25 Adc) VBE(sat) VBE(on) (IC = 10 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 4) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 4.0 − − − MHz pF − 2N5883, 2N5884 2N5885, 2N5886 Cob hfe 1000 500 − Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz) 20 SWITCHING CHARACTERISTICS Rise Time Fall Time tr tf − − − 0.7 1.0 0.8 ms ms ms Storage Time (VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) ts 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT = |hfe| • ftest. 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power Derating http://onsemi.com 2 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) VCC −30 V 3.0 TO SCOPE tr ≤ 20 ns TURN−ON TIME RL +2.0 V 0 tr ≤ 20 ns −11 V 10 to 100 ms t, TIME ( μs) DUTY CYCLE ≈ 2.0% VCC RL +9.0 V 0 RB −11 V tr ≤ 20 ns 10 to 100 ms 10 −30 V 3.0 TO SCOPE tr ≤ 20 ns 10 RB 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.3 tr TJ = 25°C IC/IB = 10 VCC = 30 V VBE(off) = 2 V TURN−OFF TIME td 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) VBB +7.0 V DUTY CYCLE ≈ 2.0% FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 Figure 3. Turn−On Time Figure 2. Switching Time Equivalent Test Circuits 1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) qJC(t) = r(t) qJC qJC = 0.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) − TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.05 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 4. Thermal Response 100 50 20 10 dc 1 ms 5 ms 500 ms 5.0 2.0 1.0 0.5 0.2 0.1 1.0 TJ = 200°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 2N5883, 2N5885 2N5884, 2N5886 2.0 3.0 5.0 7.0 10 20 30 50 70 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C − V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 200°C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMPERES) Figure 5. Active−Region Safe Operating Area http://onsemi.com 3 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 10 7.0 5.0 3.0 t, TIME ( μs) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.3 0.5 0.7 tf ts 3000 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) ts TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 2000 C, CAPACITANCE (pF) Cob Cib 1000 700 500 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 20 30 300 0.1 0.2 Cob 50 100 Cib tf 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn−Off Time PNP DEVICES 2N5883 and 2N5884 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.3 0.5 0.7 25°C Figure 7. Capacitance NPN DEVICES 2N5885 and 2N5886 TJ = 150°C 25°C −55 °C VCE = 4.0 V VCE = 4.0 V TJ = 150°C −55 °C 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 Figure 8. DC Current Gain Figure 9. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25°C 1.6 IC = 2.0 A 1.2 5.0 A 10 A 20 A VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25°C 1.6 IC = 2.0 A 5.0 A 10 A 20 A 1.2 0.8 0.8 0.4 0 0.01 0.4 0.02 0.05 0.1 0.5 0.2 1.0 IB, BASE CURRENT (AMPERES) 2.0 5.0 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, COLLECTOR CURRENT (AMPERES) Figure 10. Collector Saturation Region Figure 11. Collector Saturation Region http://onsemi.com 4 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2.0 TJ = 25°C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 2.0 TJ = 25°C 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4 V 0.4 VCE(sat) @ IC/IB = 10 0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4 V 0.4 VCE(sat) @ IC/IB = 10 0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.8 0.8 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) Figure 12. “On” Voltages Figure 13. “On” Voltages ORDERING INFORMATION Device 2N5883 2N5883G 2N5884 2N5884G 2N5885 2N5885G 2N5886 2N5886G Package TO−204 TO−204 (Pb−Free) TO−204 TO−204 (Pb−Free) 100 Units / Tray TO−204 TO−204 (Pb−Free) TO−204 TO−204 (Pb−Free) Shipping http://onsemi.com 5 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z A N C −T− E D 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. 0.13 (0.005) TQ M Y M U V 2 L G 1 −Y− H B DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC −−− 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF −−− 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC −−− 21.08 3.84 4.19 30.15 BSC 3.33 4.77 −Q− 0.13 (0.005) M TY M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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