2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon
High−Power Transistors
Complementary silicon high−power transistors are designed for
general−purpose power amplifier and switching applications.
Features
25 AMPERE COMPLEMENTARY
SILICON POWER TRANSISTORS
60 − 80 VOLTS, 200 WATTS
• Low Collector−Emitter Saturation Voltage −
•
•
•
•
http://onsemi.com
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
Low Leakage Current
ICEX = 1.0 mAdc (max) at Rated Voltage
Excellent DC Current Gain −
hFE = 20 (min) at IC = 10 Adc
High Current Gain Bandwidth Product −
ft = 4.0 MHz (min) at IC = 1.0 Adc
Pb−Free Packages are Available*
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TO−204AA (TO−3)
CASE 1−07
STYLE 1
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Collector−Emitter Voltage
2N5883, 2N5885
2N5884, 2N5886
VCEO
Collector−Base Voltage
Value
Unit
Vdc
60
80
VCB
2N5883, 2N5885
2N5884, 2N5886
Emitter−Base Voltage
Vdc
60
80
VEB
5.0
Vdc
Collector Current −
Continuous
Peak
IC
Base Current
IB
7.5
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
200
1.15
W
W/°C
TJ, Tstg
– 65 to + 200
°C
Operating and Storage Junction
Temperature Range
MARKING DIAGRAM
2N588xG
AYYWW
MEX
Adc
25
50
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
0.875
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data. Units and conditions differ on some
parameters and re−registration reflecting these changes has been requested.
All above values most or exceed present JEDEC registered data.
2N588x
G
A
YY
WW
MEX
= Device Code
x = 3, 4, 5, or 6
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 11
1
Publication Order Number:
2N5883/D
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
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ELECTRICAL CHARACTERISTICS (Note 2) (TC = 25°C unless otherwise noted)
Characteristic
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 200 mAdc, IB = 0)
2N5883, 2N5885
2N5884, 2N5886
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
2N5883, 2N5885
2N5984, 2N5886
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
2N5883, 2N5885
2N5884, 2N5886
2N5883, 2N5885
2N5884, 2N5886
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
2N5883, 2N5885
2N5884, 2N5886
Symbol
Min
Max
Unit
VCEO(sus)
60
80
−
−
Vdc
−
−
2.0
2.0
mAdc
−
−
−
−
1.0
1.0
10
10
mAdc
−
−
1.0
1.0
mAdc
−
1.0
mAdc
35
20
4.0
−
100
−
−
−
1.0
4.0
Vdc
ICEO
ICEX
ICBO
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
IEBO
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
(IC = 25 Adc, VCE = 4.0 Vdc)
hFE
Collector−Emitter Saturation Voltage (Note 3)
(IC = 15 Adc, IB = 1.5 Adc)
(IC = 25 Adc, IB = 6.25 Adc)
VCE(sat)
Base−Emitter Saturation Voltage (Note 3)
VBE(sat)
−
2.5
Vdc
VBE(on)
−
1.5
Vdc
Base−Emitter On Voltage (Note 3)
(IC = 25 Adc, IB = 6.25 Adc)
(IC = 10 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2N5883, 2N5884
2N5885, 2N5886
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz)
fT
4.0
−
MHz
Cob
−
−
1000
500
pF
hfe
20
−
−
tr
−
0.7
ms
ts
−
1.0
ms
tf
−
0.8
ms
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
Storage Time
Fall Time
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT = |hfe| • ftest.
PD, POWER DISSIPATION (WATTS)
200
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
http://onsemi.com
2
175
200
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
VCC
−30 V
TURN−ON TIME
RL
+2.0 V
3.0
10
0
TO SCOPE
tr ≤ 20 ns
RB
tr ≤
20ns
2.0
−11V
0.7
0.5
10 to 100 ms
VCC
TURN−OFF TIME
RL
+9.0V
10
3.0
TO SCOPE
tr ≤ 20 ns
0
RB
tr ≤ 20ns
10 to 100 ms
−30 V
t, TIME (s)
μ
DUTY CYCLE ≈ 2.0%
−11V
TJ = 25°C
IC/IB = 10
VCC = 30 V
VBE(off) = 2 V
1.0
0.3
tr
0.2
0.1
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
td
0.07
0.05
0.03
VBB
+7.0 V
0.02
0.3
DUTY CYCLE ≈ 2.0%
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)
FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
20
30
Figure 3. Turn−On Time
Figure 2. Switching Time Equivalent Test Circuits
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.5
D = 0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
SINGLE PULSE
P(pk)
qJC(t) = r(t) qJC
qJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) − TC = P(pk) qJC(t)
DUTY CYCLE, D = t1/t2
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
20
50
100
200
500
1000
2000
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMPERES)
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I C − V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 200°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 200°C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
500 ms
50
1ms
20
dc
10
5ms
TJ = 200°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
(SINGLE PULSE)
CURVES APPLY BELOW RATED VCEO
5.0
2.0
1.0
0.5
0.2
0.1
1.0
2N5883, 2N5885
2N5884, 2N5886
2.0 3.0
5.0 7.0 10
20 30
50 70
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
100
Figure 5. Active−Region Safe Operating Area
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3
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
3000
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
3.0
ts
2.0
t, TIME (s)
μ
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
2000
C, CAPACITANCE (pF)
10
7.0
5.0
ts
1.0
0.7
0.5
tf
0.3
Cob
Cib
1000
500
tf
0.2
0.1
0.3
0.5 0.7
Cib
700
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)
20
300
0.1
30
0.2
0.5
1.0 2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
PNP DEVICES
2N5883 and 2N5884
VCE = 4.0 V
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
1000
700
500
300
25°C
−55 °C
100
70
50
30
VCE = 4.0 V
TJ = 150°C
300
200
100
70
50
25°C
30
−55 °C
20
20
10
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)
10
0.3
20 30
0.5 0.7
2.0
TJ = 25°C
1.6
IC = 2.0 A
5.0 A
10 A
20 A
1.2
0.8
0.4
0
0.01
0.02
0.05 0.1
0.5
0.2
1.0
IB, BASE CURRENT (AMPERES)
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)
20
30
Figure 9. DC Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
100
NPN DEVICES
2N5885 and 2N5886
TJ = 150°C
200
50
Figure 7. Capacitance
Figure 6. Turn−Off Time
1000
700
500
Cob
2.0
5.0
10
2.0
TJ = 25°C
1.6
1.2
IC = 2.0 A
5.0 A
10 A
20 A
0.8
0.4
0
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
IB, COLLECTOR CURRENT (AMPERES)
Figure 10. Collector Saturation Region
Figure 11. Collector Saturation Region
http://onsemi.com
4
10
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
2.0
2.0
TJ = 25°C
TJ = 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
1.2
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 4 V
0.4
1.2
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 4 V
0.4
VCE(sat) @ IC/IB = 10
0
0.3
0.5 0.7 1.0
2.0 3.0
VCE(sat) @ IC/IB = 10
5.0 7.0
10
20
0
30
0.3
IC, COLLECTOR CURRENT (AMPERES)
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
IC, COLLECTOR CURRENT (AMPERES)
Figure 12. “On” Voltages
Figure 13. “On” Voltages
ORDERING INFORMATION
Device
2N5883
2N5883G
2N5884
2N5884G
Package
Shipping
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
100 Units / Tray
2N5885
2N5885G
2N5886
2N5886G
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
http://onsemi.com
5
20
30
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
DATE 05/18/1988
SCALE 1:1
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
−T−
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
STYLE 2:
PIN 1. BASE
2. COLLECTOR
CASE: EMITTER
STYLE 3:
PIN 1. GATE
2. SOURCE
CASE: DRAIN
STYLE 4:
PIN 1. GROUND
2. INPUT
CASE: OUTPUT
STYLE 6:
PIN 1. GATE
2. EMITTER
CASE: COLLECTOR
STYLE 7:
PIN 1. ANODE
2. OPEN
CASE: CATHODE
STYLE 8:
PIN 1. CATHODE #1
2. CATHODE #2
CASE: ANODE
STYLE 9:
PIN 1. ANODE #1
2. ANODE #2
CASE: CATHODE
STYLE 5:
PIN 1. CATHODE
2. EXTERNAL TRIP/DELAY
CASE: ANODE
ON Semiconductor and
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© Semiconductor Components Industries, LLC, 2000
January, 2000 − Rev. 07Z
1
Case Outline Number:
1
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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