2N5883

SILICON EPITAXIAL PNP TRANSISTOR 2N5883 • • • High Voltage, Low Saturation Voltages. Hermetic TO3 Metal Package. Designed For Power Switching and Linear Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range -60V -60V -5V -25A -50A -7.5A 200W 1.14W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Max. 0.875 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 5981 Issue 3 Page 1 of 3 Website: http://www.semelab-tt.com SILICON EPITAXIAL PNP TRANSISTOR 2N5883 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR)CEO ICEV ICEO ICBO IEBO (1) (1) Parameters Collector-Emitter Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Forward-current transfer ratio Base-Emitter Voltage Test Conditions IC = -50mA VCE = -60V VBE = 1.5V TC = 150°C VCE = -30V VCB = -60V VEB = -5V IC = -3A IB = 0 IE = 0 IC = 0 VCE = -4V VCE = -4V VCE = -4V VCE = -4V IB = -1.5A IB = -6.25A IB = -6.25A Min. -60 Typ Max. Units V -1.0 -10 -2 -1.0 -1.0 35 20 4 -1.5 -1.0 -4 -2.5 V 100 mA hFE IC = -10A IC = -25A VBE (1) IC = -10A IC = -15A IC = -25A IC = -25A VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (1) DYNAMIC CHARACTERISTICS fT Transition Frequency IC = -1.0A f = 1.0MHz Output Capacitance Rise Time Storage Time Fall Time VCC = -30V IB1 = -IB2 = -1.0A IC = -10A VCB = -10V f = 1.0MHz IE = 0 1000 0.7 1.0 0.8 µs pF VCE = -10V 4 MHz Cobo tr ts tf Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5981 Issue 3 Page 2 of 3 SILICON EPITAXIAL PNP TRANSISTOR 2N5883 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) METAL PACKAGE Underside View Pin 1 - Base Pin 2 - Emitter Case - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5981 Issue 3 Page 3 of 3 22.23 (0.875) max.