ADP3212, NCP3218,
NCP3218G
7-Bit, Programmable,
3-Phase, Mobile CPU
Synchronous Buck Controller
The APD3212/NCP3218/NCP3218G is a highly efficient,
http://onsemi.com
multi−phase, synchronous buck switching regulator controller. With
its integrated drivers, the APD3212/NCP3218/NCP3218G is
optimized for converting the notebook battery voltage into the core
supply voltage required by high performance Intel processors. An
internal 7−bit DAC is used to read a VID code directly from the
1 48
processor and to set the CPU core voltage to a value within the range
1 48
QFN48
QFN48
of 0.3 V to 1.5 V. The APD3212/NCP3218/NCP3218G is
CASE 485AJ
CASE 485BA
programmable for 1−, 2−, or 3−phase operation. The output signals
ensure interleaved 2− or 3−phase operation.
MARKING DIAGRAM
The APD3212/NCP3218/NCP3218G uses a multimode architecture
1
run at a programmable switching frequency and optimized for
xxx = Specific Device Code
efficiency depending on the output current requirement. The
(ADP3212 or NCP3218/G)
xxP321x
APD3212/NCP3218/NCP3218G switches between single− and
A
= Assembly Location
AWLYYWWG WL = Wafer Lot
multi−phase operation to maximize efficiency with all load conditions.
YY = Year
The chip includes a programmable load line slope function to adjust the
WW = Work Week
output voltage as a function of the load current so that the core voltage is
G
= Pb−Free Package
always optimally positioned for a load transient. The APD3212/
NCP3218/NCP3218G also provides accurate and reliable short−circuit
ORDERING INFORMATION
protection, adjustable current limiting, and a delayed power−good
See detailed ordering and shipping information in the package
output. The IC supports On−The−Fly (OTF) output voltage changes
dimensions section on page 33 of this data sheet.
requested by the CPU.
The APD3212/NCP3218/NCP3218G are specified over
• Active Current Balancing Between Output Phases
the extended commercial temperature range of −40°C to
• Independent Current Limit and Load Line Setting
100°C. The ADP3212 is available in a 48−lead QFN 7x7mm
Inputs for Additional Design Flexibility
0.5mm pitch package. The NCP3218/NCP3218G is
• Built−In Power−Good Blanking Supports Voltage
available in a 48−lead QFN 6x6mm 0.4mm pitch package.
Identification (VID) On−The−Fly (OTF) Transients
ADP3212/NCP3218 has 1.1 V Vboot Voltage, while
•
7−Bit, Digitally Programmable DAC with 0.3 V to
NCP3218G has 987.5 mV Vboot Voltage. Except for the
1.5
V Output
packages and Vboot Voltages, the APD3212/NCP3218/
• Short−Circuit Protection with Programmable Latchoff
NCP3218G are identical. APD3212/NCP3218/NCP3218G
Delay
are Halogen−Free, Pb−Free and RoHS compliant.
• Clock Enable Output Delays the CPU Clock Until the
Features
Core Voltage is Stable
• Single−Chip Solution
• Output Power or Current Monitor Options
• Fully Compatible with the Intel® IMVP−6.5t
• 48−Lead QFN 7x7mm (ADP3212), 48−Lead QFN
Specifications
6x6mm (NCP3218/NCP3218G)
• Selectable 1−, 2−, or 3−Phase Operation with Up to 1
• Vboot = 1.1 V (ADP3212/NCP3218)
MHz per Phase Switching Frequency
Vboot = 987.5 mV (NCP3218G)
• Phase 1 and Phase 2 Integrated MOSFET Drivers
• These are Pb−Free Devices
• Input Voltage Range of 3.3 V to 22 V
• Fully RoHS Compliant
• Guaranteed ±8 mV Worst−Case Differentially Sensed
Applications
Core Voltage Error Over Temperature
• Notebook Power Supplies for Next−Generation Intel
• Automatic Power−Saving Mode Maximizes Efficiency
Processors
with Light Load During Deeper Sleep Operation
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 4
1
Publication Order Number:
ADP3212/D
ADP3212, NCP3218, NCP3218G
VID0
VID1
VID2
VID3
VID4
VID5
VID6
PSI
DPRSLP
PH0
PH1
VCC
PIN ASSIGNMENT
BST1
DRVH1
SW1
SWFB1
PVCC
DRVL1
PGND
DRVL2
SWFB2
SW2
DRVH2
BST2
1
ADP3212
NCP3218
(top view)
IREF
RPM
RT
RAMP
LLINE
CSREF
CSSUM
CSCOMP
ILIM
OD3
PWM3
SWFB3
EN
PWRGD
IMON
CLKEN
FBRTN
FB
COMP
TRDET
VARFREQ
VRTT
TTSNS
GND
VCC EN
GND
COMP
FB
+
REF
LLINE
+
S
VEA
−
+
CSREF
+
S _
SWFB1
BST1
UVLO
Shutdown
and Bias
TRDET
Generator
1.55 V
−
+
TRDET
RPM RT RAMP VARFREQ
Oscillator
DRVH1
Driver
Logic
Current
Balancing
Circuit
SW1
PVCC
DRVL1
PGND
OVP
BST2
DRVH2
SWFB2
SW2
SWFB3
PVCC
PH0
PH1
DAC + 200 mV
PGND
OD3
−
+
FBRTN
CLKEN
Open
Drain
Precision
Reference
PSI and
DPRSLP
Logic
Soft
Transient
Delay
+
−
Soft Start
REF
Figure 1. Functional Block Diagram
http://onsemi.com
2
CSREF
CSSUM
ILIM
Thermal
Throttle
Control
DAC
IMON
CSCOMP
Delay
Disable
CLKEN
Start Up
Delay
VID
DAC
PSI
DPRSLP
Current
Current
Monitor
Monitor
IREF
CLKEN
Current
Limit
Circuit
PWRGD
Start Up
Delay
VID6
VID5
VID4
VID3
VID2
VID1
VID0
PWRGD
DAC − 300 mV
PWRGD
Open
Drain
PWM3
OCP
Shutdown
Delay
−
+
CSREF
DRVL2
Number of
Phases
TTSENSE
VRTT
ADP3212, NCP3218, NCP3218G
ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Unit
VCC, PVCC1, PVCC2
−0.3 to +6.0
V
FBRTN, PGND1, PGND2
−0.3 to +0.3
V
BST1, BST2, DRVH1, DRVH2
DC
t < 200 ns
−0.3 to +28
−0.3 to +33
BST1 to PVCC, BST2 to PVCC
DC
t < 200 ns
−0.3 to +22
−0.3 to +28
BST1 to SW1, BST2 to SW2
−0.3 to +6.0
SW1, SW2
DC
t < 200 ns
−1.0 to +22
−6.0 to +28
DRVH1 to SW1, DRVH2 to SW2
−0.3 to +6.0
DRVL1 to PGND1, DRVL2 to PGND2
DC
t < 200 ns
−0.3 to +6.0
−5.0 to +6.0
RAMP (in Shutdown)
−0.3 to +22
V
All Other Inputs and Outputs
−0.3 to +6.0
V
Storage Temperature Range
−65 to +150
°C
Operating Ambient Temperature Range
−40 to +100
°C
V
V
V
V
V
V
Operating Junction Temperature
125
°C
Thermal Impedance (qJA) 2−Layer Board
30.5
°C/W
Lead Temperature
Soldering (10 sec)
Infrared (15 sec)
300
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.
PIN ASSIGNMENT
Pin No.
Mnemonic
Description
1
EN
2
PWRGD
3
IMON
4
CLKEN
Clock Enable Output. Open−drain output. A low logic state enables the CPU internal PLL clock to lock to
the external clock.
5
FBRTN
Feedback Return Input/Output. This pin remotely senses the CPU core voltage. It is also used as the
ground return for the VID DAC and the voltage error amplifier blocks.
Enable Input. Driving this pin low shuts down the chip, disables the driver outputs, pulls PWRGD and
VRTT low, and pulls CLKEN high.
Power−Good Output. Open−drain output. A low logic state means that the output voltage is outside of the
VID DAC defined range.
Current Monitor Output. This pin sources a current proportional to the output load current. A resistor to
FBRTN sets the current monitor gain.
6
FB
7
COMP
Voltage Error Amplifier Feedback Input. The inverting input of the voltage error amplifier.
Voltage Error Amplifier Output and Frequency Compensation Point.
8
TRDET
Transient Detect Output. This pin is pulled low when a load release transient is detected. During repetitive
load transients at high frequencies, this circuit optimally positions the maximum and minimum output
voltage into a specified loadline window.
9
VARFREQ
Variable Frequency Enable Input. A high logic state enables the PWM clock frequency to vary with VID code.
10
VRTT
Voltage Regulator Thermal Throttling Output. Logic high state indicates that the voltage regulator
temperature at the remote sensing point exceeded a set alarm threshold level.
http://onsemi.com
3
ADP3212, NCP3218, NCP3218G
PIN ASSIGNMENT
Pin No.
Mnemonic
Description
11
TTSNS
Thermal Throttling Sense and Crowbar Disable Input. A resistor divider where the upper resistor is connected
to VCC, the lower resistor (NTC thermistor) is connected to GND, and the center point is connected to this
pin and acts as a temperature sensor half bridge. Connecting TTSNS to GND disables the thermal throttling
function and disables the crowbar, or Overvoltage Protection (OVP), feature of the chip.
12
GND
Analog and Digital Signal Ground.
13
IREF
This pin sets the internal bias currents. A 80 kW resistor is connected from this pin to ground.
14
RPM
RPM Mode Timing Control Input. A resistor between this pin to ground sets the RPM mode turn−on
threshold voltage.
15
RT
16
RAMP
PWM Ramp Slope Setting Input. An external resistor from the converter input voltage node to this pin sets
the slope of the internal PWM stabilizing ramp used for phase−current balancing.
17
LLINE
Output Load Line Programming Input. The center point of a resistor divider between CSREF and
CSCOMP is connected to this pin to set the load line slope.
18
CSREF
Current Sense Reference Input. This pin must be connected to the common point of the output inductors.
The node is shorted to GND through an internal switch when the chip is disabled to provide soft stop
transient control of the converter output voltage.
19
CSSUM
Current Sense Summing Input. External resistors from each switch node to this pin sum the inductor
currents to provide total current information.
20
CSCOMP
Current Sense Compensation Point. A resistor and capacitor from this pin to CSSUM determine the gain of
the current−sense amplifier and the positioning loop response time.
21
ILIM
Current Limit Setpoint. An external resistor from this pin to CSCOMP sets the current limit threshold of the
converter.
22
OD3
Multi−phase Output Disable Logic Output. This pin is actively pulled low when the APD3212/NCP3218/
NCP3218G enters single−phase mode or during shutdown. Connect this pin to the SD inputs of the
Phase−3 MOSFET drivers.
23
PWM3
Logic−Level PWM Output for phase 3. Connect to the input of an external MOSFET driver such as the
ADP3611.
24
SWFB3
Current Balance Input for phase 3. Input for measuring the current level in phase 3. SWFB3 should be left
open for 1 or 2 phase configuration.
25
BST2
High−Side Bootstrap Supply for Phase 2. A capacitor from this pin to SW2 holds the bootstrapped voltage
while the high−side MOSFET is on.
26
DRVH2
Multi−phase Frequency Setting Input. An external resistor connected between this pin and GND sets the
oscillator frequency of the device when operating in multi−phase PWM mode threshold of the converter.
High−Side Gate Drive Output for Phase 2.
27
SW2
28
SWFB2
Current Return for High−Side Gate Drive for phase 2.
Current Balance Input for phase 2. Input for measuring the current level in phase 2. SWFB2 should be left
open for 1 phase configuration.
29
DRVL2
Low−Side Gate Drive Output for Phase 2.
30
PGND
Low−Side Driver Power Ground
31
DRVL1
Low−Side Gate Drive Output for Phase 1.
32
PVCC
Power Supply Input/Output of Low−Side Gate Drivers.
33
SWFB1
Current Balance Input for phase 1. Input for measuring the current level in phase 1.
34
SW1
35
DRVH1
Current Return For High−Side Gate Drive for phase 1.
36
BST1
High−Side Bootstrap Supply for Phase 1. A capacitor from this pin to SW1 holds the bootstrapped voltage
while the high−side MOSFET is on.
37
VCC
Power Supply Input/Output of the Controller.
38
PH1
Phase Number Configuration Input. Connect to VCC for 3 phase configuration.
39
PH0
Phase Number Configuration Input. Connect to GND for 1 phase configuration. Connect to VCC for
multi−phase configuration.
40
DPRSLP
41
PSI
42 to
48
VID6 to VID0
High−Side Gate Drive Output for Phase 1.
Deeper Sleep Control Input.
Power State Indicator Input. Pulling this pin to GND forces the APD3212/NCP3218/NCP3218G to operate
in single−phase mode.
Voltage Identification DAC Inputs. When in normal operation mode, the DAC output programs the FB
regulation voltage from 0.3 V to 1.5 V (see Table 3).
http://onsemi.com
4
ADP3212, NCP3218, NCP3218G
ELECTRICAL CHARACTERISTICS
VCC = PVCC = 5.0 V, FBRTN = PGND = GND = 0 V, H = 5.0 V, L = 0 V, EN = VARFREQ = H, DPRSLP = L, PSI = 1.05 V,
VVID = VDAC = 1.2000 V, TA = −40°C to 100°C, unless otherwise noted. (Note 1) Current entering a pin (sink current) has a positive sign.
Parameter
Symbol
Conditions
Min
Typ
Max
Units
VOLTAGE CONTROL
VOLTAGE ERROR AMPLIFIER (VEAMP)
FB, LLINE Voltage Range (Note 2)
VFB, VLLINE
Relative to CSREF = VDAC
−200
+200
mV
FB, LLINE Offset Voltage (Note 2)
VOSVEA
Relative to CSREF = VDAC
−0.5
+0.5
mV
ILLINE
−100
+100
nA
IFB
−1.0
+1.0
mA
−82.5
mV
4.0
V
LLINE Bias Current
FB Bias Current
LLINE Positioning Accuracy
VFB − VVID
Measured on FB relative to VVID,
LLINE forced 80 mV below CSREF
COMP Voltage Range (Note 2)
VCOMP
COMP Current
ICOMP
COMP = 2.0 V, CSREF = VDAC
FB forced 200 mV below CSREF
FB forced 200 mV above CSREF
SRCOMP
CCOMP = 10 pF, CSREF = VDAC,
Open loop configuration
FB forced 200 mV below CSREF
FB forced 200 mV above CSREF
COMP Slew Rate
Gain Bandwidth (Note 2)
GBW
−77.5
−80
0.85
mA
−0.75
6
V/ms
15
−20
Non−inverting unit gain configuration,
RFB = 1 kW
20
MHz
VID DAC VOLTAGE REFERENCE
See VID table
VDAC Voltage Range (Note 2)
VDAC Accuracy
VFB − VVID
Measured on FB (includes offset),
relative to VVID
VVID = 1.2000 V to 1.5000 V,
T = −40°C to 100°C
VVID = 0.3000 V to 1.1875 V,
T = −40°C to 100°C
VDAC Differential Non−linearity
(Note 2)
0
1.5
V
mV
−8.5
+8.5
−7.5
+7.5
−1.0
+1.0
LSB
VDAC Line Regulation
ΔVFB
VCC = 4.75 V to 5.25 V
0.02
%
VDAC Boot Voltage
(ADP3212, NCP3218)
VBOOTFB
Measured during boot delay period
1.100
V
VDAC Boot Voltage (NCP3218G)
VBOOTFB
Measured during boot delay period
987.5
mV
Soft−Start Delay (Note 2)
tDSS
Measured from EN pos edge to
FB = 50 mV
200
ms
Soft−Start Time
tSS
Measured from FB = 50 mV to FB
settles to 1.1 V within 5%
1.4
ms
tBOOT
Measured from FB settling to 1.1 V
within 5% to CLKEN neg edge
60
ms
Soft−Start
Non−LSB VID step, DPRSLP = H,
Slow C4 Entry/Exit
Non−LSB VID step, DPRSLP = L,
Fast C4 Exit
LSB VID step, DVID transition
0.0625
0.25
LSB/ms
Boot Delay
VDAC Slew Rate (Note 2)
FBRTN Current
1.0
0.4
IFBRTN
−90
−200
mA
−300
−360
mV
VOLTAGE MONITORING and PROTECTION
POWER GOOD
CSREF Undervoltage Threshold
VUVCSREF
Relative to nominal VDAC voltage
−240
CSREF Overvoltage Threshold
VOVCSREF
Relative to nominal VDAC voltage
150
200
250
mV
CSREF Crowbar Voltage
Threshold
VCBCSREF
Relative to FBRTN, VVID > 1.1 V
Relative to FBRTN, VVID ≤ 1.1 V
1.5
1.3
1.55
1.35
1.6
1.4
V
1.
2.
3.
4.
All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
Guaranteed by design or bench characterization, not production tested.
Based on bench characterization data.
Timing is referenced to the 90% and 10% points, unless otherwise noted.
http://onsemi.com
5
ADP3212, NCP3218, NCP3218G
ELECTRICAL CHARACTERISTICS
VCC = PVCC = 5.0 V, FBRTN = PGND = GND = 0 V, H = 5.0 V, L = 0 V, EN = VARFREQ = H, DPRSLP = L, PSI = 1.05 V,
VVID = VDAC = 1.2000 V, TA = −40°C to 100°C, unless otherwise noted. (Note 1) Current entering a pin (sink current) has a positive sign.
Parameter
Symbol
Conditions
Min
Typ
Max
Units
−370
−300
−75
−10
85
250
mV
1.0
mA
VOLTAGE MONITORING and PROTECTION
POWER GOOD
CSREF Reverse Voltage
Threshold
VRVCSREF
Relative to FBRTN, latchoff mode
CSREF is falling
CSREF is rising
PWRGD Low Voltage
VPWRGD
IPWRGD(SINK) = 4 mA
PWRGD High, Leakage Current
IPWRGD
VPWRDG = 5.0 V
PWRGD Startup Delay
TSSPWRGD
PWRGD Latchoff Delay
mV
Measured from CLKEN neg edge to
PWRGD pos edge
8.0
ms
TLOFFPWRGD
Measured from Out−off−Good−Window
event to Latchoff (switching stops)
120
ms
TPDPWRGD
Measured from Out−off−Good−Window
event to PWRGD neg edge
200
ns
Measured from Crowbar event to
latchoff (switching stops)
200
ns
PWRGD Masking Time
Triggered by any VID change or OCP
event
100
ms
CSREF Soft−Stop Resistance
EN = L or latchoff condition
70
W
PWRGD Propagation Delay
(Note 3)
Crowbar Latchoff Delay
(Note 2)
TLOFFCB
CURRENT CONTROL
CURRENT−SENSE AMPLIFIER (CSAMP)
CSSUM, CSREF Common−Mode
Range (Note 2)
Voltage range of interest
2.0
V
CSSUM, CSREF Offset Voltage
VOSCSA
−1.2
+1.2
mV
CSSUM Bias Current
IBCSSUM
−20
+20
nA
CSREF Bias Current
IBCSREF
−3.0
+3.0
mA
0.05
2.0
V
CSCOMP Voltage Range
(Note 2)
CSCOMP Current
Voltage range of interest
ICSCOMPsource
ICSCOMPsink
CSCOMP Slew Rate (Note 2)
Gain Bandwidth (Note 2)
CSREF – CSSUM , TA = −40°C to 85°C
0
CSCOMP = 2.0 V, CSSUM forced
200 mV below CSREF
CSSUM forced 200 mV above CSREF
CCSCOMP = 10 pF, CSREF = VDAC,
Open loop configuration
CSSUM forced 200 mV below CSREF
CSSUM forced 200 mV above CSREF
GBWCSA
−750
mA
1.0
mA
V/ms
20
−20
Non−inverting unit gain configuration
RFB = 1 kW
20
MHz
CURRENT MONITORING and PROTECTION
CURRENT REFERENCE
IREF Voltage
VREF
RREF = 80 kW to set IREF = 20 mA
1.55
1.6
1.65
V
CURRENT LIMITER (OCP)
Current Limit (OCP) Threshold
Current Limit Latchoff Delay
1.
2.
3.
4.
VLIMTH
Measured from CSCOMP to CSREF,
RLIM = 1.5 kW,
3−ph configuration, PSI = H
3−ph configuration, PSI = L
2−ph configuration, PSI = H
2−ph configuration, PSI = L
1−ph configuration
Measured from OCP event to PWRGD
de−assertion
mV
−75
−22
−75
−36
−75
−90
−30
−90
−45
−90
120
All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
Guaranteed by design or bench characterization, not production tested.
Based on bench characterization data.
Timing is referenced to the 90% and 10% points, unless otherwise noted.
http://onsemi.com
6
−106
−38
−106
−54
−106
ms
ADP3212, NCP3218, NCP3218G
ELECTRICAL CHARACTERISTICS
VCC = PVCC = 5.0 V, FBRTN = PGND = GND = 0 V, H = 5.0 V, L = 0 V, EN = VARFREQ = H, DPRSLP = L, PSI = 1.05 V,
VVID = VDAC = 1.2000 V, TA = −40°C to 100°C, unless otherwise noted. (Note 1) Current entering a pin (sink current) has a positive sign.
Parameter
Symbol
Conditions
Min
Typ
Max
4.0
4.0
4.0
4.3
4.4
4.5
Units
CURRENT MONITOR
Current Gain Accuracy
IMON/ILIM
Measured from ILIM to IMON
ILIM = −20 mA
ILIM = −10 mA
ILIM = −5 mA
3.7
3.6
3.5
IMON Clamp Voltage
VMAXMON
Relative to FBRTN, ILIMP = −30 mA
1.0
1.15
−
V
PULSE WIDTH MODULATOR
CLOCK OSCILLATOR
RT Voltage
VRT
VARFREQ = high, RT = 125 kW,
VVID = 1.5000 V
VARFREQ = low
See also VRT(VVID) formula
PWM Clock Frequency Range
(Note 2)
fCLK
Operation of interest
PWM Clock Frequency
fCLK
TA = +25°C, VVID = 1.2000 V
RT = 72 kW
RT = 120 kW
RT = 180 kW
1.125
0.9
1.25
1.0
0.3
1.375
1.1
3.0
V
MHz
kHz
1100
700
500
1257
800
550
1400
900
600
1.0
VIN
1.1
V
100
+1.0
mA
RAMP GENERATOR
RAMP Voltage
VRAMP
EN = high, IRAMP = 60 mA
EN = low
0.9
RAMP Current Range (Note 2)
IRAMP
EN = high
EN = low, RAMP = 19 V
1.0
−1.0
PWM COMPARATOR
PWM Comparator Offset (Note 2)
VOSRPM
VRAMP − VCOMP
±3.0
mV
VVID = 1.2 V, RT = 215 kW
See also IRPM(RT) formula
−9.0
mA
VCOMP − (1 + VRPMTH)
±3.0
mV
RPM COMPARATOR
RPM Current
RPM Comparator Offset (Note 2)
IRPM
VOSRPM
EPWM CLOCK SYNC
Relative to COMP sampled TCLK time
earlier
3−phase configuration
2−phase configuration
1−phase configuration
Trigger Threshold (Note 2)
mV
350
400
450
TRDET
Trigger Threshold (Note 2)
Relative to COMP sampled TCLK time
earlier
3−phase configuration
2−phase configuration
1−phase configuration
TRDET Low Voltage (Note 2)
VLTRDET
Logic low, ITRDETsink = 4 mA
TRDET Leakage Current
IHTRDET
Logic high, VTRDET = VCC
mV
−450
−500
−600
30
300
mV
5.0
mA
+200
mV
50
kW
SWITCH AMPLIFIER
SW Common Mode Range
(Note 2)
SWFB Input Resistance
VSW(X)CM
RSW(X)
Operation of interest for current sensing
SWX = 0 V, SWFB = 0 V
−600
20
35
ZERO CURRENT SWITCHING COMPARATOR
SW ZCS Threshold
1.
2.
3.
4.
VDCM(SW1)
DCM mode, DPRSLP = 3.3 V
−6.0
All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
Guaranteed by design or bench characterization, not production tested.
Based on bench characterization data.
Timing is referenced to the 90% and 10% points, unless otherwise noted.
http://onsemi.com
7
mV
ADP3212, NCP3218, NCP3218G
ELECTRICAL CHARACTERISTICS
VCC = PVCC = 5.0 V, FBRTN = PGND = GND = 0 V, H = 5.0 V, L = 0 V, EN = VARFREQ = H, DPRSLP = L, PSI = 1.05 V,
VVID = VDAC = 1.2000 V, TA = −40°C to 100°C, unless otherwise noted. (Note 1) Current entering a pin (sink current) has a positive sign.
Parameter
Symbol
Conditions
Min
Typ
Max
Units
ZERO CURRENT SWITCHING COMPARATOR
Masked Off−Time
tOFFMSKD
Measured from DRVH1 neg edge to
DRVH1 pos edge at operation max
frequency
600
ns
SYSTEM I/O BUFFERS
VID[6:0], DPRSLP, PSI INPUTS
Input Voltage
Refers to driving signal level
Logic low
Logic high
Input Current
V = 0.2 V, VID[6:0], DPRSLP
(active pulldown to GND)
PSI (active pullup to VCC)
VID Delay Time (Note 2)
Any VID edge to FB change 10%
0.3
0.7
V
mA
−1.0
1.0
200
ns
VARFREQ
Refers to driving signal level
Logic low
Logic high
Input Voltage
0.7
4.0
Input Current
1.0
V
mA
EN INPUT
Input Voltage
Refers to driving signal level
Logic low
Logic high
Input Current
EN = L or EN = H (static)
0.8 V < EN < 1.6 V (during transition)
0.4
1.9
10
−70
V
nA
mA
PH1, PH0 INPUTS
Refers to driving signal level
Logic low
Logic high
Input Voltage
0.5
4.0
Input Current
1.0
V
mA
CLKEN OUTPUT
Output Low Voltage
Logic low, Isink = 4 mA
Output High, Leakage Current
Logic high, VCLKEN = VCC
60
200
mV
1.0
mA
10
5.0
100
mV
V
5.0
V
2.5
2.55
PWM3, OD3 OUTPUTS
Output Voltage
Logic low, ISINK = 400 mA
Logic high, ISOURCE = −400 mA
4.0
VCC = 5.0 V, TTSNS is falling
2.45
THERMAL MONITORING and PROTECTION
TTSNS Voltage Range (Note 2)
0
TTSNS Threshold
TTSNS Hysteresis
95
TTSNS Bias Current
VRTT Output Voltage
TTSNS = 2.6 V
VVRTT
Logic low, IVRTT(SINK) = 400 mA
Logic high, IVRTT(SOURCE) = −400 mA
−2.0
4.5
10
5.0
V
mV
2.0
mA
100
mV
V
5.5
V
SUPPLY
Supply Voltage Range
VCC
Supply Current
VCC OK Threshold
VCC UVLO Threshold
1.
2.
3.
4.
4.5
EN = high
EN = 0 V
7
10
10
150
mA
mA
VCCOK
VCC is rising
4.4
4.5
V
VCCUVLO
VCC is falling
4.0
4.15
All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
Guaranteed by design or bench characterization, not production tested.
Based on bench characterization data.
Timing is referenced to the 90% and 10% points, unless otherwise noted.
http://onsemi.com
8
V
ADP3212, NCP3218, NCP3218G
ELECTRICAL CHARACTERISTICS
VCC = PVCC = 5.0 V, FBRTN = PGND = GND = 0 V, H = 5.0 V, L = 0 V, EN = VARFREQ = H, DPRSLP = L, PSI = 1.05 V,
VVID = VDAC = 1.2000 V, TA = −40°C to 100°C, unless otherwise noted. (Note 1) Current entering a pin (sink current) has a positive sign.
Parameter
Symbol
Conditions
Min
Typ
Max
Units
SUPPLY
VCC Hysteresis (Note 2)
150
mV
HIGH−SIDE MOSFET DRIVER
Pullup Resistance, Sourcing
Current (Note 3)
BST = PVCC
1.8
3.3
W
Pulldown Resistance, Sinking
Current (Note 3)
BST = PVCC
1.0
2.0
W
BST = PVCC, CL = 3 nF, Figure 2
BST = PVCC, CL = 3 nF, Figure 2
15
13
30
25
ns
Transition Times
trDRVH
tfDRVH
Dead Delay Times
tpdhDRVH
30
40
ns
1.0
200
10
mA
Pullup Resistance, Sourcing
Current (Note 3)
1.7
2.8
W
Pulldown Resistance, Sinking
Current (Note 3)
0.8
1.7
W
15
14
35
35
ns
11
30
ns
250
350
ns
BST Quiescent Current
BST = PVCC, Figure 2
15
EN = L (Shutdown)
EN = H, no switching
LOW−SIDE MOSFET DRIVER
Transition Times
Propagation Delay Times
SW Transition Timeout
trDRVL
tfDRVL
CL = 3 nF, Figure 2
CL = 3 nF, Figure 2
tpdhDRVL
CL = 3 nF, Figure 2
tTOSW
SW Off Threshold
DRVH = L, SW = 2.5 V
100
VOFFSW
PVCC Quiescent Current
2.5
EN = L (Shutdown)
EN = H, no switching
V
1.0
170
10
mA
6.0
8.0
W
BOOTSTRAP RECTIFIER SWITCH
EN = L or EN = H and DRVL = H
On Resistance (Note 3)
1.
2.
3.
4.
4.0
All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
Guaranteed by design or bench characterization, not production tested.
Based on bench characterization data.
Timing is referenced to the 90% and 10% points, unless otherwise noted.
tfDRVL
trDRVL
DRVL
tpdhDRVH
DRVH
(WITH RESPECT TO SW)
tfDRVH
trDRVH
VTH
VTH
tpdhDRVL
1.0 V
SW
Figure 2. Timing Diagram (Note 4)
http://onsemi.com
9
ADP3212, NCP3218, NCP3218G
TEST CIRCUITS
7−BIT CODE
5V
VID0
VID1
VID2
VID3
VID4
VID5
VID6
PSI
DPRSLP
PH1
PH2
VCC
48
3.3 V
EN 1
PWRGD
1 kW
GND
SW1
SWFB1
PVCC
DRVL1
PGND
DRVL2
SWFB2
SW2
ADP3212
IREF
RPM
RT
RAMP
LLINE
CSREF
CSSUM
CSCOMP
ILIM
OD3
PWM3
SWFB3
IMON
CLKEN
FBRTN
FB
COMP
TRDET
VARFREQ
VRTT
TTSNS
BST1
DRVH1
DRVH2
BST2
80 kW
20 kW
100 nF
Figure 3. Closed−Loop Output Voltage Accuracy
5.0 V
37 VCC
7
5.0 V
ADP3212
20
39 kW
6
18
COMP
FB
−
CSCOMP
+
100 nF
19
1 kW
10 kW
37 VCC
CSSUM
CSREF
17
LLINE
−
DV
+
1.0 V
12 GND
ADP3212
V OS +
18
CSREF
VID DAC
1.0 V
CSCOMP * 1.0 V
40 V
12 GND
DV FB + FB DV + DV * FB DV+0 mV
Figure 4. Current Sense Amplifier, VOS
Figure 5. Positioning Accuracy
http://onsemi.com
10
ADP3212, NCP3218, NCP3218G
TYPICAL PERFORMANCE CHARACTERISTICS
VVID = 1.5 V, TA = 20°C to 100°C, unless otherwise noted.
1000
PER PHASE SWITCHING
FREQUENCY (kHz)
350
VARFREQ = 0 V
300
250
VARFREQ = 5 V
200
150
100
RT = 187 kW
2 Phase Mode
50
0
0.25
0.50
0.75
1.00
1.25
VID = 1.4125 V
SWITCHING FREQUENCY (kHz)
400
1.50
VID = 1.2125 V
VID = 1.1 V
VID = 0.8125 V
VID = 0.6125 V
100
10
100
1000
VID OUTPUT VOLTAGE (V)
Rt RESISTANCE (kW)
Figure 6. Switching Frequency vs. VID Output
Voltage in PWM Mode
Figure 7. Per Phase Switching Frequency vs.
RT Resistance
Output Voltage
Output Voltage
1
1
PWRGD
2
3
4
PWRGD
2
CLKEN
3
EN
1: 0.5 V/div
2: 2 V/div
3: 5 V/div
4: 5 V/div
1 ms/div
4
GPU Mode
CLKEN
EN
1: 0.5 V/div
2: 2 V/div
Figure 8. Startup in GPU Mode
PWRGD
2
EN
3
CLKEN
4
1: 0.5 V/div
2: 2 V/div
4 ms/div
CPU Mode
Figure 9. Startup in CPU Mode
Output Voltage
1
3: 5 V/div
4: 5 V/div
3: 2 V/div
4: 2 V/div
200 ms/div
Figure 10. Shutdown
http://onsemi.com
11
1 A Load
ADP3212, NCP3218, NCP3218G
TYPICAL PERFORMANCE CHARACTERISTICS
VVID = 1.5 V, TA = 20°C to 100°C, unless otherwise noted.
SW1
1
1
SW2
SW1
SW2
2
2
SW3
SW3
3
3
PSI
DPRSLP
4
4
1: 10 V/div
2: 10 V/div
3: 10 V/div
4: 2 V/div
1: 10 V/div
2: 10 V/div
4 ms/div
Figure 11. DPRSLP Transition with PSI = High
3: 10 V/div
4: 0.5 V/div
4 ms/div
Figure 12. PSI Transition with DPRSLP = Low
SW1
SW1
1
1
SW2
2
SW2
2
SW3
3
SW3
3
DPRSLP
4
PSI
4
1: 10 V/div
2: 10 V/div
3: 10 V/div
4: 2 V/div
4 ms/div
1: 10 V/div
2: 10 V/div
Figure 13. DPRSLP Transition with PSI = High
3: 10 V/div 4 ms/div
4: 0.5 V/div
Figure 14. PSI Transition with DPRSLP = Low
SW1
SW1
1
1
SW2
SW2
2
2
SW3
SW3
3
3
DPRSLP
DPRSLP
4
1: 10 V/div
2: 10 V/div
3: 10 V/div
4: 2 V/div
4
4 ms/div
1: 10 V/div
2: 10 V/div
Figure 15. DPRSLP Transition with PSI = Low
3: 10 V/div
4: 2 V/div
4 ms/div
Figure 16. DPRSLP Transition with PSI = Low
http://onsemi.com
12
ADP3212, NCP3218, NCP3218G
Theory of Operation
monitors the PWM outputs. Because each phase is
monitored independently, operation approaching 100%
duty cycle is possible. In addition, more than one output can
be active at a time, permitting overlapping phases.
The APD3212/NCP3218/NCP3218G combines multi−mode
Pulse−Width Modulated (PWM) control and Ramp−Pulse
Modulated (RPM) control with multi−phase logic outputs
for use in single−, dual−phase, or triple−phase synchronous
buck CPU core supply power converters. The internal 7−bit
VID DAC conforms to the Intel IMVP−6.5 specifications.
Multi−phase operation is important for producing the high
currents and low voltages demanded by today’s
microprocessors. Handling high currents in a single−phase
converter would put too high of a thermal stress on system
components such as the inductors and MOSFETs.
The multimode control of the APD3212/NCP3218/
NCP3218G is a stable, high performance architecture that
includes
• Current and thermal balance between phases.
• High speed response at the lowest possible switching
frequency and minimal count of output decoupling
capacitors.
• Minimized thermal switching losses due to lower
frequency operation.
• High accuracy load line regulation.
• High current output by supporting 2−phase or 3−phase
operation.
• Reduced output ripple due to multi−phase ripple
cancellation.
• High power conversion efficiency with heavy and light
loads.
• Increased immunity from noise introduced by PC board
layout constraints.
• Ease of use due to independent component selection.
• Flexibility in design by allowing optimization for either
low cost or high performance.
Operation Modes
The number of phases can be static (see the Number of
Phases section) or dynamically controlled by system signals
to optimize the power conversion efficiency with heavy and
light loads.
If APD3212/NCP3218/NCP3218G is configured for
mulit−phase configuration, during a VID transient or with a
heavy load condition (indicated by DPRSLP being low and
PSI being high), the APD3212/NCP3218/NCP3218G runs
in multi−phase, interleaved PWM mode to achieve minimal
VCORE output voltage ripple and the best transient
performance possible. If the load becomes light (indicated by
PSI being low or DPRSLP being high), APD3212/
NCP3218/NCP3218G switches to single−phase mode to
maximize the power conversion efficiency.
In addition to changing the number of phases, the
APD3212/NCP3218/NCP3218G is also capable of
dynamically changing the control method. In dual−phase
operation, the APD3212/NCP3218/NCP3218G runs in
PWM mode, where the switching frequency is controlled by
the master clock. In single−phase operation (commanded by
the DPRSLP high state), the APD3212/NCP3218/
NCP3218G runs in RPM mode, where the switching
frequency is controlled by the ripple voltage appearing on
the COMP pin. In RPM mode, the DRVH1 pin is driven high
each time the COMP pin voltage rises to a voltage limit set
by the VID voltage and an external resistor connected
between the RPM pin and GND. In RPM mode, the
APD3212/NCP3218/NCP3218G turns off the low−side
(synchronous rectifier) MOSFET when the inductor current
drops to 0. Turning off the low−side MOSFETs at the zero
current crossing prevents reversed inductor current build up
and breaks synchronous operation of high− and low−side
switches. Due to the asynchronous operation, the switching
frequency becomes slower as the load current decreases,
resulting in good power conversion efficiency with very
light loads.
Table 2 summarizes how the APD3212/NCP3218/
NCP3218G dynamically changes the number of active
phases and transitions the operation mode based on system
signals and operating conditions.
Number of Phases
The number of operational phases can be set by the user.
Tying the PH1 pin to the GND pin forces the chip into
single−phase operation. Tying PH0 to GND and PH1 to
VCC forces the chip into 2−phase operation. Tying PH0 and
PH1 to VCC forces the chip in 3−phase operation. PH0 and
PH1 should be hard wired to VCC or GND. The
APD3212/NCP3218/NCP3218G switches between single
phase and multi−phase operation with PSI and DPRSLP to
optimize power conversion efficiency. Table 1 summarizes
PH0 and PH1.
GPU Mode
Table 1. PHASE NUMBER CONFIGURATION
PH0
PH1
0
0
1
1
0
1 (GPU Mode)
0
1
2
1
1
3
The APD3212/NCP3218/NCP3218G can be used to
power IMVP−6.5 GMCH. To configure the APD3212/
NCP3218/NCP3218G in GPU, connect PH1 to VCC and
connect PH0 to GND. In GPU mode, the
APD3212/NCP3218/NCP3218G operates in single phase
only. In GPU mode, the boot voltage is disabled. During
startup, the output voltage ramps up to the programmed VID
voltage. There is no other difference between GPU mode
and normal CPU mode.
Number of Phases Configured
In mulit−phase configuration, the timing relationship
between the phases is determined by internal circuitry that
http://onsemi.com
13
ADP3212, NCP3218, NCP3218G
Table 2. PHASE NUMBER AND OPERATION MODES (Note 1)
Current Limit
No. of Phases
Selected by
the User
No. of Phases
in Operation
Operation Modes
(Note 3)
PSI No.
DPRSLP
VID Transition
(Note 2)
*
*
Yes
*
N [3,2 or 1]
N
PWM, CCM only
1
0
No
*
N [3,2 or 1]
N
PWM, CCM only
0
0
No
No
*
1
RPM, CCM only
0
0
No
Yes
N [3,2 or 1]
N
PWM, CCM only
*
1
No
No
*
1
RPM, automatic CCM/DCM
*
1
No
Yes
*
1
PWM, CCM only
1. * = Don’t Care.
2. VID transient period is the time following any VID change, including entry into and exit from deeper sleep mode. The duration of VID transient
period is the same as that of PWRGD masking time.
3. CCM stands for continuous current mode, and DCM stands for discontinuous current mode.
VRMP
FLIP−FLOP
IR = AR x IRAMP
BST1
Q
S
CR
400 ns
1V
FLIP−FLOP
Q
Q
S
Q
RD
R2
SWFB1
1V
R1
SWFB2
CSREF
RA
CFB
CA
FBRTN
100 W
VCC
RI
100 W
–
+ VCS
+
FB
L
LOAD
GATE DRIVER
BST
DRVH
DRVH2
IN
SW
SW2
DCM DRVL DRVL2
VDC
+
–
COMP
RI
BST2
R1
R2
30 mV
VCC
GATE DRIVER
BST
DRVH DRVH1
IN
SW
SW1
DCM DRVL
DRVL1
RD
+
LLINE
CSCOMP
CB
CSSUM
RCS
RPH
CCS
RPH
RFB
Figure 17. Single−Phase RPM Mode Operation
http://onsemi.com
14
L
ADP3212, NCP3218, NCP3218G
Gate Driver BST1
BST
Flip−Flop
DRVH1
DRVH
IN
S Q
SW
SW1
RD
DRVL
DRVL1
IR = AR x IRAMP
Clock
Oscillator
+
−
CR
SWFB1
+
−
AD
Gate Driver
BST2
BST
DRVH2
DRVH
IN SW
SW2
Flip−Flop
S Q
Clock
Oscillator
+
−
CR
RD
DRVL
L
RL
L
100 W
VCC
DRVL2
SWFB2
+
−
0.2 V
100 W
VCC
Gate Driver
IR = AR x IRAMP
Flip−Flop
Clock
Oscillator
+
−
PWM3
Q
S
CR
RD
BST
DRVH
IN
SW
RL
L
LOAD
DRVL
100 W
SWFB3
+
−
0.2 V
VCC
+
_
+
RAMP
−
+
COMP
RA
FB
S
+
FBRTN
DAC
_
S
CSREF
+
CSCOMP
LLINE
−
+
AD
RL
0.2 V
IR = AR x IRAMP
AD
VCC
RPH
RPH
RCS
CA
CFB
CSSUM
CB
RPH
CCS
RB
Figure 18. 3−Phase PWM Mode Operation
Setting Switch Frequency
7 shows the relationship between clock frequency and VID
voltage, parameterized by RT resistance.
To determine the switching frequency per phase, divide
the clock by the number of phases in use.
Master Clock Frequency in PWM Mode
When the APD3212/NCP3218/NCP3218G runs in
PWM, the clock frequency is set by an external resistor
connected from the RT pin to GND. The frequency is
constant at a given VID code but varies with the VID
voltage: the lower the VID voltage, the lower the clock
frequency. The variation of clock frequency with VID
voltage maintains constant VCORE ripple and improves
power conversion efficiency at lower VID voltages. Figure
Switching Frequency in RPM Mode; Single−Phase
Operation
In single−phase RPM mode, the switching frequency is
controlled by the ripple voltage on the COMP pin, rather
than by the master clock. Each time the COMP pin voltage
http://onsemi.com
15
ADP3212, NCP3218, NCP3218G
An additional resistor divider connected between the
CSCOMP and CSREF pins with the midpoint connected to
the LLINE pin can be used to set the load line required by the
microprocessor specification. The current information to set
the load line is then given as the voltage difference between
the LLINE and CSREF pins. This configuration allows the
load line slope to be set independent from the current limit
threshold. If the current limit threshold and load line do not
have to be set independently, the resistor divider between the
CSCOMP and CSREF pins can be omitted and the
CSCOMP pin can be connected directly to LLINE. To
disable voltage positioning entirely (that is, to set no load
line), LLINE should be tied to CSREF.
To provide the best accuracy for current sensing, the CSA
has a low offset input voltage and the sensing gain is set by
an external resistor ratio.
exceeds the RPM pin voltage threshold level determined by
the VID voltage and the external resistor RPM resistor, an
internal ramp signal is started and DRVH1 is driven high.
The slew rate of the internal ramp is programmed by the
current entering the RAMP pin. One−third of the RAMP
current charges an internal ramp capacitor (5 pF typical) and
creates a ramp. When the internal ramp signal intercepts the
COMP voltage, the DRVH1 pin is reset low.
Differential Sensing of Output Voltage
The APD3212/NCP3218/NCP3218G combines differential
sensing with a high accuracy VID DAC, referenced by a
precision band gap source and a low offset error amplifier,
to meet the rigorous accuracy requirement of the Intel
IMVP−6.5 specification. In steady−state mode, the
combination of the VID DAC and error amplifier maintain
the output voltage for a worst−case scenario within ±8 mV
of the full operating output voltage and temperature range.
The CPU core output voltage is sensed between the FB
and FBRTN pins. FB should be connected through a resistor
to the positive regulation point; the VCC remote sensing pin
of the microprocessor. FBRTN should be connected directly
to the negative remote sensing point; the VSS sensing point
of the CPU. The internal VID DAC and precision voltage
reference are referenced to FBRTN and have a maximum
current of 200 mA for guaranteed accurate remote sensing.
Active Impedance Control Mode
To control the dynamic output voltage droop as a function
of the output current, the signal that is proportional to the
total output current, converted from the voltage difference
between LLINE and CSREF, can be scaled to be equal to the
required droop voltage. This droop voltage is calculated by
multiplying the droop impedance of the regulator by the
output current. This value is used as the control voltage of
the PWM regulator. The droop voltage is subtracted from the
DAC reference output voltage, and the resulting voltage is
used as the voltage positioning set point. The arrangement
results in an enhanced feed forward response.
Output Current Sensing
The APD3212/NCP3218/NCP3218G includes a
dedicated Current Sense Amplifier (CSA) to monitor the
total output current of the converter for proper voltage
positioning vs. load current and for over current detection.
Sensing the current delivered to the load is an inherently
more accurate method than detecting peak current or
sampling the current across a sense element, such as the
low−side MOSFET. The current sense amplifier can be
configured several ways, depending on system optimization
objectives, and the current information can be obtained by:
• Output inductor ESR sensing without the use of a
thermistor for the lowest cost.
• Output inductor ESR sensing with the use of a
thermistor that tracks inductor temperature to improve
accuracy.
• Discrete resistor sensing for the highest accuracy.
At the positive input of the CSA, the CSREF pin is
connected to the output voltage. At the negative input (that
is, the CSSUM pin of the CSA), signals from the sensing
element (in the case of inductor DCR sensing, signals from
the switch node side of the output inductors) are summed
together by series summing resistors. The feedback resistor
between the CSCOMP and CSSUM pins sets the gain of the
current sense amplifier, and a filter capacitor is placed in
parallel with this resistor. The current information is then
given as the voltage difference between the CSCOMP and
CSREF pins. This signal is used internally as a differential
input for the current limit comparator.
Current Control Mode and Thermal Balance
The APD3212/NCP3218/NCP3218G has individual
inputs for monitoring the current of each phase. The phase
current information is combined with an internal ramp to
create a current−balancing feedback system that is
optimized for initial current accuracy and dynamic thermal
balance. The current balance information is independent
from the total inductor current information used for voltage
positioning described in the Active Impedance Control
Mode section.
The magnitude of the internal ramp can be set so that the
transient response of the system is optimal. The
APD3212/NCP3218/NCP3218G monitors the supply
voltage to achieve feed forward control whenever the supply
voltage changes. A resistor connected from the power input
voltage rail to the RAMP pin determines the slope of the
internal PWM ramp. More detail about programming the
ramp is provided in the Application Information section.
External resistors are placed in series with the SWFB1,
SWFB2, and SWFB3 pins to create an intentional current
imbalance. Such a condition can exist when one phase has
better cooling and supports higher currents the other phases.
Resistors RSWSB1, RSWFB2, and RSWFB3 (see
Figure 25) can be used to adjust thermal balance. It is
recommended to add these resistors during the initial design
to make sure placeholders are provided in the layout.
http://onsemi.com
16
ADP3212, NCP3218, NCP3218G
PWRGD range is monitored. To prevent a false alarm, the
power−good circuit is masked during various system
transitions, including a VID change and entrance into or exit
out of deeper sleep. The duration of the PWRGD mask is set
to approximately 130 ms by an internal timer. If the voltage
drop is greater than 200 mV during deeper sleep entry or
slow deeper sleep exit, the duration of PWRGD masking is
extended by the internal logic circuit.
To increase the current in any given phase, users should
make RSWFB for that phase larger (that is, RSWFB = 100 W
for the hottest phase and do not change it during balance
optimization). Increasing RSWFB to 150 W makes a
substantial increase in phase current. Increase each RSWFB
value by small amounts to achieve thermal balance starting
with the coolest phase.
If adjusting current balance between phases is not needed,
RSWFB should be 100 W for all phases.
Powerup Sequence and Soft−Start
VDC
SWFB1
The power−on ramp−up time of the output voltage is set
internally. The APD3212/NCP3218/NCP3218G steps
sequentially through each VID code until it reaches the boot
voltage. The powerup sequence, including the soft−start is
illustrated in Figure 20.
After EN is asserted high, the soft−start sequence starts.
The core voltage ramps up linearly to the boot voltage. The
APD3212/NCP3218/NCP3218G regulates at the boot
voltage for approximately 90 ms. After the boot time is over,
CLKEN is asserted low. Before CLKEN is asserted low, the
VID pins are ignored. 9 ms after CLKEN is asserted low,
PWRGD is asserted high.
Phase 1
Inductor
ADP3212
RSWFB1
33
VDC
SWFB2
RSWFB2
Phase 2
Inductor
28
VDC
SWFB3
RSWFB3
Phase 3
Inductor
VCC = 5 V
24
EN
VBOOT
Figure 19. Current Balance Resistors
VCORE
Voltage Control Mode
tBOOT
A high−gain bandwidth error amplifier is used for the
voltage mode control loop. The non−inverting input voltage
is set via the 7−bit VID DAC. The VID codes are listed in
Table 3. The non−inverting input voltage is offset by the
droop voltage as a function of current, commonly known as
active voltage positioning. The output of the error amplifier
is the COMP pin, which sets the termination voltage of the
internal PWM ramps.
At the negative input, the FB pin is tied to the output sense
location using RB, a resistor for sensing and controlling the
output voltage at the remote sensing point. The main loop
compensation is incorporated in the feedback network
connected between the FB and COMP pins.
CLKEN
tCPU_PWRGD
PWRGD
Figure 20. Powerup Sequence of
APD3212/NCP3218/NCP3218G
Current Limit
The APD3212/NCP3218/NCP3218G compares the
differential output of a current sense amplifier to a
programmable current limit set point to provide the current
limiting function. The current limit threshold is set by the user
with a resistor connected from the ILIM pin to CSCOMP.
Power−Good Monitoring
The power−good comparator monitors the output voltage
via the CSREF pin. The PWRGD pin is an open−drain
output that can be pulled up through an external resistor to
a voltage rail; not necessarily the same VCC voltage rail that
is running the controller. A logic high level indicates that the
output voltage is within the voltage limits defined by a range
around the VID voltage setting. PWRGD goes low when the
output voltage is outside of this range.
Following the IMVP−6.5 specification, the PWRGD
range is defined to be 300 mV less than and 200 mV greater
than the actual VID DAC output voltage. For any DAC
voltage less than 300 mV, only the upper limit of the
Changing VID On−The−Fly (OTF)
The APD3212/NCP3218/NCP3218G is designed to track
dynamically changing VID code. As a consequence, the
CPU VCC voltage can change without the need to reset the
controller or the CPU. This concept is commonly referred to
as VID OTF transient. A VID OTF can occur with either
light or heavy load conditions. The processor alerts the
controller that a VID change is occurring by changing the
VID inputs in LSB incremental steps from the start code to
the finish code. The change can be either upwards or
downwards steps.
http://onsemi.com
17
ADP3212, NCP3218, NCP3218G
In DCM with a light load, the APD3212/NCP3218/
NCP3218G monitors the switch node voltage to determine
when to turn off the low−side FET. Figure 27 shows a typical
waveform in DCM with a 1 A load current. Between t1 and
t2, the inductor current ramps down. The current flows
through the source drain of the low−side FET and creates a
voltage drop across the FET with a slightly negative switch
node. As the inductor current ramps down to 0 A, the switch
voltage approaches 0 V, as seen just before t2. When the
switch voltage is approximately −6 mV, the low−side FET is
turned off.
Figure 26 shows a small, dampened ringing at t2. This is
caused by the LC created from capacitance on the switch
node, including the CDS of the FETs and the output inductor.
This ringing is normal.
The APD3212/NCP3218/NCP3218G automatically goes
into DCM with a light load. Figure 27 shows the typical
DCM waveform of the APD3212/NCP3218/NCP3218G.
As the load increases, the APD3212/NCP3218/NCP3218G
enters into CCM. In DCM, frequency decreases with load
current. Figure 28 shows switching frequency vs. load
current for a typical design. In DCM, switching frequency
is a function of the inductor, load current, input voltage, and
output voltage.
When a VID input changes, the APD3212/NCP3218/
NCP3218G detects the change but ignores new code for a
minimum of 400 ns. This delay is required to prevent the
device from reacting to digital signal skew while the 7−bit
VID input code is in transition. Additionally, the VID
change triggers a PWRGD masking timer to prevent a
PWRGD failure. Each VID change resets and retriggers the
internal PWRGD masking timer.
As listed in Table 3, during a VID transient, the
APD3212/NCP3218/NCP3218G forces PWM mode
regardless of the state of the system input signals. For
example, this means that if the chip is configured as a
dual−phase controller but is running in single−phase mode
due to a light load condition, a current overload event causes
the chip to switch to dual−phase mode to share the excessive
load until the delayed current limit latchoff cycle terminates.
In user−set single−phase mode, the APD3212/NCP3218/
NCP3218G usually runs in RPM mode. When a VID
transition occurs, however, the APD3212/NCP3218/
NCP3218G switches to dual−phase PWM mode.
Light Load RPM DCM Operation
In single−phase normal mode, DPRSLP is pulled low and
the APD3208 operates in Continuous Conduction Mode
(CCM) over the entire load range. The upper and lower
MOSFETs run synchronously and in complementary phase.
See Figure 21 for the typical waveforms of the
APD3212/NCP3218/NCP3218G running in CCM with a 7
A load current.
4
INPUT
VOLTAGE
Q1
DRVH
OUTPUT
VOLTAGE
SWITCH
NODE
L
Q2
DRVL
C
LOAD
OUTPUT VOLTAGE
Figure 22. Buck Topology
20 mV/DIV
INDUCTOR CURRENT
5 A/DIV
2
ON
L
SWITCH NODE 5 V/DIV
3
1
LOW−SIDE GATE DRIVE 5 V/DIV
OFF
C
LOAD
Figure 23. Buck Topology Inductor Current
During t0 and t1
400 ns/DIV
OFF
Figure 21. Single−Phase Waveforms in CCM
If DPRSLP is pulled high, the APD3212/NCP3218/
NCP3218G operates in RPM mode. If the load condition is
light, the chip enters Discontinuous Conduction Mode
(DCM). Figure 22 shows a typical single−phase buck with
one upper FET, one lower FET, an output inductor, an output
capacitor, and a load resistor. Figure 23 shows the path of the
inductor current with the upper FET on and the lower FET
off. In Figure 24, the high−side FET is off and the low−side
FET is on. In CCM, if one FET is on, its complementary FET
must be off; however, in DCM, both high− and low−side
FETs are off and no current flows into the inductor (see
Figure 25). Figure 26 shows the inductor current and switch
node voltage in DCM.
L
C
ON
LOAD
Figure 24. Buck Topology Inductor Current
During t1 and t2
OFF
OFF
L
C
LOAD
Figure 25. Buck Topology Inductor Current During
t2 and t3
http://onsemi.com
18
ADP3212, NCP3218, NCP3218G
Output Crowbar
To prevent the CPU and other external components from
damage due to overvoltage, the APD3212/NCP3218/
NCP3218G turns off the DRVH1 and DRVH2 outputs and
turns on the DRVL1 and DRVL2 outputs when the output
voltage exceeds the OVP threshold (1.55 V typical).
Turning on the low−side MOSFETs forces the output
capacitor to discharge and the current to reverse due to
current build up in the inductors. If the output overvoltage
is due to a drain−source short of the high−side MOSFET,
turning on the low−side MOSFET results in a crowbar
across the input voltage rail. The crowbar action blows the
fuse of the input rail, breaking the circuit and thus protecting
the microprocessor from destruction.
When the OVP feature is triggered, the APD3212/
NCP3218/NCP3218G is latched off. The latchoff function
can be reset by removing and reapplying VCC to the
APD3212/NCP3218/NCP3218G or by briefly pulling the
EN pin low.
Pulling TTSNS to less than 1.0 V disables the overvoltage
protection function. In this configuration, VRTT should be
tied to ground.
Inductor
Current
Switch
Node
Voltage
t0 t1
t2
t3 t4
Figure 26. Inductor Current and Switch Node in DCM
4
OUTPUT VOLTAGE
20 mV/DIV
Reverse Voltage Protection
Very large reverse current in inductors can cause negative
VCORE voltage, which is harmful to the CPU and other
output components. The APD3212/NCP3218/NCP3218G
provides a Reverse Voltage Protection (RVP) function
without additional system cost. The VCORE voltage is
monitored through the CSREF pin. When the CSREF pin
voltage drops to less than −300 mV, the APD3212/
NCP3218/NCP3218G triggers the RVP function by
disabling all PWM outputs and driving DRVL1 and DRVL2
low, thus turning off all MOSFETs. The reverse inductor
currents can be quickly reset to 0 by discharging the built−up
energy in the inductor into the input dc voltage source via the
forward−biased body diode of the high−side MOSFETs. The
RVP function is terminated when the CSREF pin voltage
returns to greater than −100 mV.
Sometimes the crowbar feature inadvertently causes
output reverse voltage because turning on the low−side
MOSFETs results in a very large reverse inductor current. To
prevent damage to the CPU caused from negative voltage,
the APD3212/NCP3218/NCP3218G maintains its RVP
monitoring function even after OVP latchoff. During OVP
latchoff, if the CSREF pin voltage drops to less than
−300 mV, the low−side MOSFETs is turned off. DRVL
outputs are allowed to turn back on when the CSREF voltage
recovers to greater than −100 mV.
SWITCH NODE 5 V/DIV
2
INDUCTOR CURRENT
5 A/DIV
3
1
LOW−SIDE GATE DRIVE 5 V/DIV
2 μs/DIV
Figure 27. Single−Phase Waveforms in DCM with 1 A
Load Current
400
FREQUENCY (kHz)
350
300
9 V INPUT
250
19 V INPUT
200
150
100
Output Enable and UVLO
50
0
0
2
4
6
8
10
LOAD CURRENT (A)
12
For the APD3212/NCP3218/NCP3218G to begin
switching, the VCC supply voltage to the controller must be
greater than the VCCOK threshold and the EN pin must be
driven high. If the VCC voltage is less than the VCCUVLO
threshold or the EN pin is a logic low, the
14
Figure 28. Single−Phase CCM/DCM Frequency vs.
Load Current
http://onsemi.com
19
ADP3212, NCP3218, NCP3218G
TTSNS pin. An internal comparator circuit compares the
TTSNS voltage to half the VCC threshold and outputs a
logic level signal at the VRTT output when the temperature
trips the user−set alarm threshold. The VRTT output is
designed to drive an external transistor that in turn provides
the high current, open−drain VRTT signal required by the
IMVP−6.5 specification. The internal VRTT comparator
has a hysteresis of approximately 100 mV to prevent high
frequency oscillation of VRTT when the temperature
approaches the set alarm point.
APD3212/NCP3218/NCP3218G shuts off. In shutdown
mode, the controller holds the PWM outputs low, shorts the
capacitors of the SS and PGDELAY pins to ground, and
drives the DRVH and DRVL outputs low.
The user must adhere to proper power−supply sequencing
during startup and shutdown of the APD3212/NCP3218/
NCP3218G. All input pins must be at ground prior to
removing or applying VCC, and all output pins should be
left in high impedance state while VCC is off.
Thermal Throttling Control
The APD3212/NCP3218/NCP3218G includes a thermal
monitoring circuit to detect whether the temperature of the
VR has exceeded a user−defined thermal throttling
threshold. The thermal monitoring circuit requires an
external resistor divider connected between the VCC pin
and GND. The divider consists of an NTC thermistor and a
resistor. To generate a voltage that is proportional to
temperature, the midpoint of the divider is connected to the
Output Current Monitor
The APD3212/NCP3218/NCP3218G has an output
current monitor. The IMON pin sources a current
proportional to the inductor current. A resistor from IMON
pin to FBRTN sets the gain. A 0.1 mF is added in parallel with
RMON to filter the inductor ripple. The IMON pin is clamped
to prevent it from going above 1.15 V.
Table 3. VID CODE TABLE
VID6
VID5
VID4
VID3
VID2
VID1
VID0
Output (V)
0
0
0
0
0
0
0
1.5000 V
0
0
0
0
0
0
0
1.5000 V
0
0
0
0
0
0
1
1.4875 V
0
0
0
0
0
1
0
1.4750 V
0
0
0
0
0
1
1
1.4625 V
0
0
0
0
1
0
0
1.4500 V
0
0
0
0
1
0
1
1.4375 V
0
0
0
0
1
1
0
1.4250 V
0
0
0
0
1
1
1
1.4125 V
0
0
0
1
0
0
0
1.4000 V
0
0
0
1
0
0
1
1.3875 V
0
0
0
1
0
1
0
1.3750 V
0
0
0
1
0
1
1
1.3625 V
0
0
0
1
1
0
0
1.3500 V
0
0
0
1
1
0
1
1.3375 V
0
0
0
1
1
1
0
1.3250 V
0
0
0
1
1
1
1
1.3125 V
0
0
1
0
0
0
0
1.3000 V
0
0
1
0
0
0
1
1.2875 V
0
0
1
0
0
1
0
1.2750 V
0
0
1
0
0
1
1
1.2625 V
0
0
1
0
1
0
0
1.2500 V
0
0
1
0
1
0
1
1.2375 V
0
0
1
0
1
1
0
1.2250 V
0
0
1
0
1
1
1
1.2125 V
0
0
1
1
0
0
0
1.2000 V
0
0
1
1
0
0
1
1.1875 V
0
0
1
1
0
1
0
1.1750 V
0
0
1
1
0
1
1
1.1625 V
0
0
1
1
1
0
0
1.1500 V
0
0
1
1
1
0
1
1.1375 V
http://onsemi.com
20
ADP3212, NCP3218, NCP3218G
Table 3. VID CODE TABLE (continued)
VID6
VID5
VID4
VID3
VID2
VID1
VID0
Output (V)
0
0
1
1
1
1
0
1.1250 V
0
0
1
1
1
1
1
1.1125 V
0
1
0
0
0
0
0
1.1000 V
0
1
0
0
0
0
1
1.0875 V
0
1
0
0
0
1
0
1.0750 V
0
1
0
0
0
1
1
1.0625 V
0
1
0
0
1
0
0
1.0500 V
0
1
0
0
1
0
1
1.0375 V
0
1
0
0
1
1
0
1.0250 V
0
1
0
0
1
1
1
1.0125 V
0
1
0
1
0
0
0
1.0000 V
0
1
0
1
0
0
1
0.9875 V
0
1
0
1
0
1
0
0.9750 V
0
1
0
1
0
1
1
0.9625 V
0
1
0
1
1
0
0
0.9500 V
0
1
0
1
1
0
1
0.9375 V
0
1
0
1
1
1
0
0.9250 V
0
1
0
1
1
1
1
0.9125 V
0
1
1
0
0
0
0
0.9000 V
0
1
1
0
0
0
1
0.8875 V
0
1
1
0
0
1
0
0.8750 V
0
1
1
0
0
1
1
0.8625 V
0
1
1
0
1
0
0
0.8500 V
0
1
1
0
1
0
1
0.8375 V
0
1
1
0
1
1
0
0.8250 V
0
1
1
0
1
1
1
0.8125 V
0
1
1
1
0
0
0
0.8000 V
0
1
1
1
0
0
1
0.7875 V
0
1
1
1
0
1
0
0.7750 V
0
1
1
1
0
1
1
0.7625 V
0
1
1
1
1
0
0
0.7500 V
0
1
1
1
1
0
1
0.7375 V
0
1
1
1
1
1
0
0.7250 V
0
1
1
1
1
1
1
0.7125 V
1
0
0
0
0
0
0
0.7000 V
1
0
0
0
0
0
1
0.6875 V
1
0
0
0
0
1
0
0.6750 V
1
0
0
0
0
1
1
0.6625 V
1
0
0
0
1
0
0
0.6500 V
1
0
0
0
1
0
1
0.6375 V
1
0
0
0
1
1
0
0.6250 V
1
0
0
0
1
1
1
0.6125 V
1
0
0
1
0
0
0
0.6000 V
1
0
0
1
0
0
1
0.5875 V
1
0
0
1
0
1
0
0.5750 V
1
0
0
1
0
1
1
0.5625 V
1
0
0
1
1
0
0
0.5500 V
1
0
0
1
1
0
1
0.5375 V
1
0
0
1
1
1
0
0.5250 V
http://onsemi.com
21
ADP3212, NCP3218, NCP3218G
Table 3. VID CODE TABLE (continued)
VID6
VID5
VID4
VID3
VID2
VID1
VID0
Output (V)
1
0
0
1
1
1
1
0.5125 V
1
0
1
0
0
0
0
0.5000 V
1
0
1
0
0
0
1
0.4875 V
1
0
1
0
0
1
0
0.4750 V
1
0
1
0
0
1
1
0.4625 V
1
0
1
0
1
0
0
0.4500 V
1
0
1
0
1
0
1
0.4375 V
1
0
1
0
1
1
0
0.4250 V
1
0
1
0
1
1
1
0.4125 V
1
0
1
1
0
0
0
0.4000 V
1
0
1
1
0
0
1
0.3875 V
1
0
1
1
0
1
0
0.3750 V
1
0
1
1
0
1
1
0.3625 V
1
0
1
1
1
0
0
0.3500 V
1
0
1
1
1
0
1
0.3375 V
1
0
1
1
1
1
0
0.3250 V
1
0
1
1
1
1
1
0.3125 V
1
1
0
0
0
0
0
0.3000 V
1
1
0
0
0
0
1
0.2875 V
1
1
0
0
0
1
0
0.2750 V
1
1
0
0
0
1
1
0.2625 V
1
1
0
0
1
0
0
0.2500 V
1
1
0
0
1
0
1
0.2375 V
1
1
0
0
1
1
0
0.2250 V
1
1
0
0
1
1
1
0.2125 V
1
1
0
1
0
0
0
0.2000 V
1
1
0
1
0
0
1
0.1875 V
1
1
0
1
0
1
0
0.1750 V
1
1
0
1
0
1
1
0.1625 V
1
1
0
1
1
0
0
0.1500 V
1
1
0
1
1
0
1
0.1375 V
1
1
0
1
1
1
0
0.1250 V
1
1
0
1
1
1
1
0.1125 V
1
1
1
0
0
0
0
0.1000 V
1
1
1
0
0
0
1
0.0875 V
1
1
1
0
0
1
0
0.0750 V
1
1
1
0
0
1
1
0.0625 V
1
1
1
0
1
0
0
0.0500 V
1
1
1
0
1
0
1
0.0375 V
1
1
1
0
1
1
0
0.0250 V
1
1
1
0
1
1
1
0.0125 V
1
1
1
1
0
0
0
0.0000 V
1
1
1
1
0
0
1
0.0000 V
1
1
1
1
0
1
0
0.0000 V
1
1
1
1
0
1
1
0.0000 V
1
1
1
1
1
0
0
0.0000 V
1
1
1
1
1
0
1
0.0000 V
1
1
1
1
1
1
0
0.0000 V
1
1
1
1
1
1
1
0.0000 V
http://onsemi.com
22
ADP3212, NCP3218, NCP3218G
1
J23
PWRGD
Thermistor R4 should be
placed close to the hot
spot of the board.
V3.3S
PWRGD
J22
J24
2
1
TTSense
1
IMON
7.50 k
1
R60 2
0.1 m C4
VR_ON
2
1
PWRGD
EN
DNP1
2
R70
VID6
2
PSI
DNP 1
R72
0
1
R69
2
0
V5S
1
R71
DPRSLPVR
37
BST1
DRVH1
2
C3 1
2
36
35
34
33
1 mF/16 V
X7R(0805)
R8
10
1
1
100 W
V5S
2
R32 1
0
2
1
0.47 m
4
3
2
1
4
3
2
1
5
6
7
8
3
2
1
Q4
NTMFS4846N
Q9
NTMFS4846N
C16
4
C102
1
C29
R56
2 1
B
1n
C23
DNP
2
1
10 mF
C24
D8
1
1
C28
2
DNP
2
2
D5
DNP
2
1
2
DNP
A
C17
10 mF
2
C18
10 mF
2
2
Note 2
1
PH1 VCORE cut
2
2
1
JP2
2
1
RS1 DNP
2
VCORE
R31
DNP
NEC Tokin MPCG10LR45
0.45 mH/ESR = 1.1 mW
L1
1
(Optional)
1
R53
10
CSREF
2
2
CSREF
JP3
RS2 DNP
1
2
2
(Optional)
1
1
VDC
JP4
CSREF
R65
DNP
PH3 VCORE cut
1
1
2
10 mF
2
Note 2
PH2 VCORE cut
1
R54
10
VDC
2
1
1
1
NEC Tokin MPCG10LR45
0.45 mH/ESR = 1.1 mW
10 mF
C31
10 mF
C32
2
C20
10 mF
J8
L2
VDC
1
SW1
2
J9
SW2
1
10 mF
C30
2
2
10 mF
1
1
C19
10 mF
2
J26
2
1
1
DNP
2
1
1
1
L3
1n
C21
1
2
DNP
1
1
1
1n
R55 1
2
10 mF
C26
1
Q2
NTMFS4821N
C101
1
2
5
6
7
8
3
2
1
2
1
2
1
2
VID5
Q7
NTMFS4821N
C103
SW3
RS3 DNP
2
Note 3
330 mF
2
1
VID4
10 mF
C25
2
Note 2
330 mF
C70
2
VID3
44
2
C15
3
2
1
1
1
1
VID2
45
1
5
6
7
8
1
0.45 mH/ESR =
1.1 mW
VID1
46
4.7 mF
1
R57
DNP
SW1
1
4
DNP
R64 10
DNP
C69
C
2
D9
PH3_CS+
DNP
C68 1
2
1
SW3
1
330 mF
C67
2
1
4 pieces of Panasonic SP CAP (SD) or Sanyo POSCAP.
C651
C79
2
IMON
25
SW3
R42 1
0
C78
Q20
NTMFS4821N
DNP
3
4
R66 2
Q22
NTMFS4821N
VID0
47
2
5
6
7
8
R30
DNP
IMVP−6.5 solution for Penryn
processor: 3−phase/55−65 A
VCORE
Figure 29. Typical Dual−Phase Application Circuit
http://onsemi.com
23
1
1
38
2
5
6
7
8
1
0.47 m
5
6
7
8
3
2
1
330 mF
C66
2
2
100 W
2
2
4
C1
2
R1
7.32 k
39
R33 2
4
Q8
NTMFS4821N
10 mF
1
V5S
10 mF
1
2
1
2
1
2
C64
2
C63
115 k
10 mF
115 k
1
1
2
R24
10 mF
C62
R25
1
2
10 mF
48
40
C22 0
4.7 mF/
16 V
X5R
(1206)
C14
10
C61
2
VCC
0.47 m
BST
C60
SWFB3
1
2
1
R4
100 k
Therm..
5%
IN
1
1
PH1
24
1
2
2
2
10 mF
C59
115 k
10 mF
1
1
R26
C58
2
9
10 mF
8
1
DRVH
2
SD
C57
2
10 mF
3
1
2
2
2
C56
DNP
10 mF
7
10 mF
1
SW
1
2
6
2
DRVL
C54
C55
1
10 mF
1
1
R51
2
DRVLSD
10 mF
C53
CROWBAR GND
1
4
C52
2
10 mF
2
1
DNP
2
1
C51
R52
10 mF
VCC
1
PH0
PWM3
1
5
2
2
PH3_CS+
C50
R63
DNP
R21 2
10 mF
1
10 mF
1
R23
U13
ADP3611
1
2
165 k
2
C49
Up to 32 pieces of MLCC, X5R, 0805, 6.3 V.
JP11
C48
OD3
23
R61
10 mF
1
2
10n
X7R
41
DPRSLP
73.2 k
R46
42
PSI
ILIM
22
3k1
43
VID6
32
10 mF
1
1 21
31
1
2
CSCOMP
PVCC
2
CSSUM
20
ADP3212
LFCSP48
SWFB1
C46
C47
CLKEN
10 mF
FBRTN
1
5
2
19
30
10 mF
C45
VID5
DRVL1
1
FB
C44
2
6
10 mF
CSREF
29
1
18
PGND
2
VID4
DRVL2
10 mF
C43
2
COMP
1
R22
TRDET
C42
2
1
7
10 mF
8
1
LLINE
2
2
17
R62
C41
VID3
100 W
10 mF
RAMP
R14
2
1.5n
16
28
1
1
VID2
27
2
2
4.53 k
VID0
VID1
SWFB2
10 mF
C40
2
150p
C13
VARFREQ
1
C12
1
9
C39
2
10 mF
10
0
3k
U1
RT
26
10 mF
280 k
1
1
15
SW2
10 mF
1
C11
RPM
DRVH2
1
2
2
402 k
R17 1
1
IREF
14
VRTT
C37
C38
280 k
R16 1
TTSNS
10 mF
2
13
11
1
2
1
BST2
2
2
R27
80.6 k
R15 1
GND
10 mF
C36
2
12
1
1n
2
12p
2
2
C35
2
R74
DNP
2
Place R23 close to
output inductor of
phase 1.
220kTHERMISTOR 5%
2
SHORTPIN
C34
1
2
R20 1
2
C5
1n
C8
10 mF
2
VRTT
1
0
1 2
1
VDC R18
1
2
CSREF
VCC(core)
VCC(core) RTN
1 2
1n
R19
2
TTSense
1
2
1
R73 2
0
J5
VCC_S
2
J6
VSS_S
R10
100
R50 2
J7
CON2
C14
2
2
4.99 k
CLKEN#
1
DNP
860 pF
1
1
1
1
VCCSense
100
VSSSense
2
C33
1
69.8 k
R67 1
2
1
2
V5S
VCCSense
VSSSense
1
R68
R11 0
2
C104
2
R45 1
2
1
1
C6 330p
2
1
1.65 k 390 pF 39.2 k
R12 2 1 C72 1 R13 2
1
J2
TRDET
1
J3
COMP
ADP3212, NCP3218, NCP3218G
Application Information
While in DCM, the switching frequency is reduced with the
load current in a linear manner.
To save power with light loads, lower switching frequency
is usually preferred during RPM operation. However, the
VCORE ripple specification of IMVP−6.5 sets a limitation
for the lowest switching frequency. Therefore, depending on
the inductor and output capacitors, the switching frequency
in RPM can be equal to, greater than, or less than its
counterpart in PWM.
A resistor from RPM to GND sets the pseudo constant
frequency as following:
The design parameters for a typical IMVP−6.5−compliant
CPU core VR application are as follows:
• Maximum input voltage (VINMAX) = 19 V
• Minimum input voltage (VINMIN) = 8.0 V
• Output voltage by VID setting (VVID) = 1.05 V
• Maximum output current (IO) = 52 A
• Droop resistance (RO) = 1.9 mW
• Nominal output voltage at 40 A load (VOFL) = 0.9512 V
• Static output voltage drop from no load to full load
(DV) = VONL − VOFL = 1.05 V − 0.9512 V = 98 mV
• Maximum output current step (DIO) = 52 A
• Number of phases (n) = 2
• Switching frequency per phase (ƒSW) = 300 kHz
• Duty cycle at maximum input voltage (DMAX) = 0.13 V
• Duty cycle at minimum input voltage (DMIN) = 0.055 V
R RPM +
In PWM operation, the APD3212/NCP3218/NCP3218G
uses a fixed−frequency control architecture. The frequency
is set by an external timing resistor (RT). The clock
frequency and the number of phases determine the switching
frequency per phase, which relates directly to the switching
losses and the sizes of the inductors and input and output
capacitors. For a dual−phase design, a clock frequency of
600 kHz sets the switching frequency to 300 kHz per phase.
This selection represents the trade−off between the
switching losses and the minimum sizes of the output filter
components. To achieve a 600 kHz oscillator frequency at a
VID voltage of 1.2 V, RT must be 181 kW. Alternatively, the
value for RT can be calculated by using the following
equation:
2
V VID ) 1.0 V
* 16 kW
n f SW 9 pF
n
9 pF
* 16 kW
(eq. 3)
The choice of inductance determines the ripple current of
the inductor. Less inductance results in more ripple current,
which increases the output ripple voltage and the conduction
losses in the MOSFETs. However, this allows the use of
smaller−size inductors, and for a specified peak−to−peak
transient deviation, it allows less total output capacitance.
Conversely, a higher inductance results in lower ripple
current and reduced conduction losses, but it requires
larger−size inductors and more output capacitance for the
same peak−to−peak transient deviation. For a multi−phase
converter, the practical value for peak−to−peak inductor
ripple current is less than 50% of the maximum dc current
of that inductor. Equation 4 shows the relationship between
the inductance, oscillator frequency, and peak−to−peak
ripple current. Equation 5 can be used to determine the
minimum inductance based on a given output ripple voltage.
(eq. 1)
where:
RT +
A R (1 * D) V VID
* 0.5 kW
R R C R f SW
Soft Start and Current Limit Latch−Off Delay Times
Inductor Selection
9 pF and 16 kW are internal IC component values.
VVID is the VID voltage in volts.
n is the number of phases.
ƒSW is the switching frequency in hertz for each phase.
For good initial accuracy and frequency stability, it is
recommended to use a 1% resistor.
When VARFREQ pin is connected to ground, the
switching frequency does not change with VID. The value
for RT can be calculated by using the following equation.
1.0 V
2 f SW
RT
V VID ) 1.0 V
where:
AR is the internal ramp amplifier gain.
CR is the internal ramp capacitor value.
RR is an external resistor on the RAMPADJ pin to set the
internal ramp magnitude.
Setting the Clock Frequency for PWM
RT +
2
IR +
Lw
V VID
V VID
(1 * D MIN)
f SW L
RO
f SW
ǒ1 * (n
V RIPPLE
(eq. 4)
D MIN)Ǔ
(eq. 5)
Solving Equation 5 for a 16 mV peak−to−peak output
ripple voltage yields:
Lw
1.05 V
1.9 mW
300 kHz
(1 * 2
16 mV
0.055)
+ 528 nH
If the resultant ripple voltage is less than the initially
selected value, the inductor can be changed to a smaller
value until the ripple value is met. This iteration allows
optimal transient response and minimum output decoupling.
The smallest possible inductor should be used to minimize
the number of output capacitors. Choosing a 490 nH
inductor is a good choice for a starting point, and it provides
(eq. 2)
Setting the Switching Frequency for
RPM Operation of Phase 1
During the RPM operation of Phase 1, the APD3212/
NCP3218/NCP3218G runs in pseudoconstant frequency if
the load current is high enough for continuous current mode.
http://onsemi.com
24
ADP3212, NCP3218, NCP3218G
configured with resistor RPH(x) (summer) and resistors RCS
and CCS (filters). The output resistance of the regulator is set
by the following equations:
a calculated ripple current of 9.0 A. The inductor should not
saturate at the peak current of 24.5 A, and it should be able
to handle the sum of the power dissipation caused by the
winding’s average current (20 A) plus the ac core loss. In this
example, 330 nH is used.
Another important factor in the inductor design is the
DCR, which is used for measuring the phase currents. Too
large of a DCR causes excessive power losses, whereas too
small of a value leads to increased measurement error. For
this example, an inductor with a DCR of 0.8 mW is used.
RO +
C CS +
After the inductance and DCR are known, select a
standard inductor that best meets the overall design goals. It
is also important to specify the inductance and DCR
tolerance to maintain the accuracy of the system. Using 20%
tolerance for the inductance and 15% for the DCR at room
temperature are reasonable values that most manufacturers
can meet.
C CS +
The following companies provide surface−mount power
inductors optimized for high power applications upon
request:
• Vishay Dale Electronics, Inc.
(605) 665−9301
• Panasonic
(714) 373−7334
• Sumida Electric Company
(847) 545−6700
• NEC Tokin Corporation
(510) 324−4110
R PH(x) w
(eq. 7)
330 nH
+ 2.1 nF
0.8 mW 200 kW
0.8 mW
2.1 mW
220 kW + 83.8 kW
Inductor DCR Temperature Correction
If the DCR of the inductor is used as a sense element and
copper wire is the source of the DCR, the temperature
changes associated with the inductor’s winding must be
compensated for. Fortunately, copper has a well−known
Temperature Coefficient (TC) of 0.39%/°C.
If RCS is designed to have an opposite but equal
percentage of change in resistance, it cancels the
temperature variation of the inductor’s DCR. Due to the
nonlinear nature of NTC thermistors, series resistors RCS1
and RCS2 (see Figure 30) are needed to linearize the NTC and
produce the desired temperature coefficient tracking.
The design requires that the regulator output voltage
measured at the CPU pins decreases when the output current
increases. The specified voltage drop corresponds to the
droop resistance (RO).
The output current is measured by summing the currents
of the resistors monitoring the voltage across each inductor
and by passing the signal through a low−pass filter. The
summing is implemented by the CS amplifier that is
To VOUT Sense
To Switch Nodes
RTH
ADP3212
CCS2
CSSUM
18
−
+ CSREF 17
R CS
The standard 1% resistor for RPH(x) is 86.6 kW.
Output Droop Resistance
19
L
R SENSE
(eq. 6)
If CCS is not a standard capacitance, RCS can be tuned. For
example, if the optimal CCS capacitance is 1.5 nF, adjust RCS
to 280 kW. For best accuracy, CCS should be a 5% NPO
capacitor. In this example, a 220 kW is used for RCS to
achieve optimal results.
Next, solve for RPH(x) by rearranging Equation 6 as
follows:
Power Inductor Manufacturers
CSCOMP
R SENSE
where RSENSE is the DCR of the output inductors.
Either RCS or RPH(x) can be chosen for added flexibility.
Due to the current drive ability of the CSCOMP pin, the RCS
resistance should be greater than 100 kW. For example,
initially select RCS to be equal to 200 kW, and then use
Equation 7 to solve for CCS:
Selecting a Standard Inductor
Place as close as possible
to nearest inductor
R CS
R PH(x)
RCS1 RCS2
CCS1
RPH1 RPH2
RPH3
Keep This Path As Short
As Possible And Well Away
From Switch Node Lines
Figure 30. Temperature−Compensation Circuit Values
http://onsemi.com
25
ADP3212, NCP3218, NCP3218G
The following procedure and expressions yield values for
RCS1, RCS2, and RTH (the thermistor value at 25°C) for a
given RCS value.
1. Select an NTC to be used based on its type and
value. Because the value needed is not yet
determined, start with a thermistor with a value
close to RCS and an NTC with an initial tolerance
of better than 5%.
2. Find the relative resistance value of the NTC at
two temperatures. The appropriate temperatures
will depend on the type of NTC, but 50°C and
90°C have been shown to work well for most types
of NTCs. The resistance values are called A (A is
RTH(50°C)/RTH(25°C)) and B (B is
RTH(90°C)/RTH(25°C)). Note that the relative
value of the NTC is always 1 at 25°C.
3. Find the relative value of RCS required for each of
the two temperatures. The relative value of RCS is
based on the percentage of change needed, which
is initially assumed to be 0.39%/°C in this
example.
The relative values are called r1 (r1 is 1/(1+ TC ×
(T1 − 25))) and r2 (r2 is 1/(1 + TC × (T2 − 25))),
where TC is 0.0039, T1 is 50°C, and T2 is 90°C.
4. Compute the relative values for rCS1, rCS2, and rTH
by using the following equations:
r CS2 +
6. Calculate values for RCS1 and RCS2 by using the
following equations:
R CS1 + R CS
R CS2 + R CS
r TH +
(1 * A)
1
A
*
1*r CS2 r1*r CS2
5. Calculate RTH = rTH × RCS, and then select a
thermistor of the closest value available. In
addition, compute a scaling factor k based on the
ratio of the actual thermistor value used relative to
the computed one:
R TH(ACTUAL)
(eq. 9)
C X(MIN)
C X(MAX) v
n
L
k2
(eq. 10)
r CS2)Ǔ
The required output decoupling for processors and
platforms is typically recommended by Intel. For systems
containing both bulk and ceramic capacitors, however, the
following guidelines can be a helpful supplement.
Select the number of ceramics and determine the total
ceramic capacitance (CZ). This is based on the number and
type of capacitors used. Keep in mind that the best location
to place ceramic capacitors is inside the socket; however, the
physical limit is twenty 0805−size pieces inside the socket.
Additional ceramic capacitors can be placed along the outer
edge of the socket. A combined ceramic capacitor value of
200 mF to 300 mF is recommended and is usually composed
of multiple 10 mF or 22 mF capacitors.
Ensure that the total amount of bulk capacitance (CX) is
within its limits. The upper limit is dependent on the VID
OTF output voltage stepping (voltage step, VV, in time, tV,
with error of VERR); the lower limit is based on meeting the
critical capacitance for load release at a given maximum load
step, DIO. The current version of the IMVP−6.5
specification allows a maximum VCORE overshoot
(VOSMAX) of 10 mV more than the VID voltage for a
step−off load current.
(eq. 8)
R TH(CALCULATED)
ǒ(1 * k) ) (k
COUT Selection
1
1
* 1
1*rCS2 rCS1
k+
r CS1
For example, if a thermistor value of 100 kW is selected
in Step 1, an available 0603−size thermistor with a value
close to RCS is the Vishay NTHS0603N04 NTC thermistor,
which has resistance values of A = 0.3359 and B = 0.0771.
Using the equations in Step 4, rCS1 is 0.359, rCS2 is 0.729,
and rTH is 1.094. Solving for rTH yields 241 kW, so a
thermistor of 220 kW would be a reasonable selection,
making k equal to 0.913. Finally, RCS1 and RCS2 are found
to be 72.1 kW and 166 kW. Choosing the closest 1% resistor
for RCS2 yields 165 kW. To correct for this approximation,
73.3 kW is used for RCS1.
(A−B) r 1 r 2 * A (1−B) r 2 ) B (1−A) r 1
A (1 * B) r 1 * B (1 * A) r 2 * (A * B)
r CS1 +
k
RO
2
VV
V VID
ȡ
wȧ
ȧn
Ȣ
ǒ
Ǹ
ȡ
ȧ
Ȣ
26
RO )
ǒ
DI O
ǒ Ǔ
V ERR
VV
Ǔ
VOSMAX
DIO
V
1 ) t v VID
VV
where k + − ln
http://onsemi.com
L
n
ȣ
* C ȧ (eq. 11)
ȧ
Ȥ
Z
V VID
k
L
RO
Ǔ
2
ȣ
ȧ
Ȥ
* 1 * CZ
(eq. 12)
ADP3212, NCP3218, NCP3218G
the APD3212/NCP3218/NCP3218G, currents are balanced
between phases; the current in each low−side MOSFET is
the output current divided by the total number of MOSFETs
(nSF). With conduction losses being dominant, the following
expression shows the total power that is dissipated in each
synchronous MOSFET in terms of the ripple current per
phase (IR) and the average total output current (IO):
To meet the conditions of these expressions and the
transient response, the ESR of the bulk capacitor bank (RX)
should be less than two times the droop resistance, RO. If the
CX(MIN) is greater than CX(MAX), the system does not meet
the VID OTF and/or the deeper sleep exit specifications and
may require less inductance or more phases. In addition, the
switching frequency may have to be increased to maintain
the output ripple.
For example, if 30 pieces of 10 mF, 0805−size MLC
capacitors (CZ = 300 mF) are used, the fastest VID voltage
change is when the device exits deeper sleep, during which
the VCORE change is 220 mV in 22 ms with a setting error of
10 mV. If k = 3.1, solving for the bulk capacitance yields
P SF + (1−D)
ȡ
ȣ
330 nH 27.9 A
*
300
mF
ȧ
ȧ+ 1.0 mF
10 mV
Ȣ2 ǒ2.1 mW ) 27.9 AǓ 1.4375 V
Ȥ
ǒǸ
1)
2
ǒ
IR +
330 nH 220 mV
3.1 2 (2.1 mW) 2 1.4375 V
22ms
1.4375V
220 mV
2 3.1
490 nH
Ǔ
2.1mW
2
Ǔ
−1
−300 mF
Using six 330 mF Panasonic SP capacitors with a typical
ESR of 7 mW each yields CX = 1.98 mF and RX = 1.2 mW.
Ensure that the ESL of the bulk capacitors (LX) is low
enough to limit the high frequency ringing during a load
change. This is tested using:
RO 2
L X v 300 mF
Q2
(2.1 mW) 2
2 + 2 nH
2
) 1
12
ǒ
n
Ǔƫ
IR
n SF
2
R DS(SF)
(eq. 14)
(1 * D) V OUT
L f SW
Knowing the maximum output current and the maximum
allowed power dissipation, the user can calculate the
required RDS(ON) for the MOSFET. For 8−lead SOIC or
8−lead SOIC compatible MOSFETs, the junction−to−
ambient (PCB) thermal impedance is 50°C/W. In the worst
case, the PCB temperature is 70°C to 80°C during heavy
load operation of the notebook, and a safe limit for PSF is
about 0.8 W to 1.0 W at 120°C junction temperature.
Therefore, for this example (40 A maximum), the RDS(SF) per
MOSFET is less than 8.5 mW for two pieces of low−side
MOSFETs. This RDS(SF) is also at a junction temperature of
about 120°C; therefore, the RDS(SF) per MOSFET should be
less than 6 mW at room temperature, or 8.5 mW at high
temperature.
Another important factor for the synchronous MOSFET
is the input capacitance and feedback capacitance. The ratio
of the feedback to input must be small (less than 10% is
recommended) to prevent accidentally turning on the
synchronous MOSFETs when the switch node goes high.
The high−side (main) MOSFET must be able to handle
two main power dissipation components: conduction losses
and switching losses. Switching loss is related to the time for
the main MOSFET to turn on and off and to the current and
voltage that are being switched. Basing the switching speed
on the rise and fall times of the gate driver impedance and
MOSFET input capacitance, the following expression
provides an approximate value for the switching loss per
main MOSFET:
+ 21 mF
LX v CZ
IO
n SF
where:
D is the duty cycle and is approximately the output voltage
divided by the input voltage.
IR is the inductor peak−to−peak ripple current and is
approximately
C X(MIN) w
C X(MAX) v
ƪǒ Ǔ
(eq. 13)
where:
Q is limited to the square root of 2 to ensure a critically
damped system.
LX is about 150 pH for the six SP capacitors, which is low
enough to avoid ringing during a load change. If the LX of
the chosen bulk capacitor bank is too large, the number of
ceramic capacitors may need to be increased to prevent
excessive ringing.
For this multimode control technique, an all ceramic
capacitor design can be used if the conditions of
Equations 11, 12, and 13 are satisfied.
Power MOSFETs
For typical 20 A per phase applications, the N−channel
power MOSFETs are selected for two high−side switches
and two or three low−side switches per phase. The main
selection parameters for the power MOSFETs are VGS(TH),
QG, CISS, CRSS, and RDS(ON). Because the voltage of the
gate driver is 5.0 V, logic−level threshold MOSFETs must be
used.
The maximum output current, IO, determines the RDS(ON)
requirement for the low−side (synchronous) MOSFETs. In
P S(MF) + 2
f SW
V DC I O
n MF
RG
n MF
n
C ISS
(eq. 15)
where:
nMF is the total number of main MOSFETs.
RG is the total gate resistance.
CISS is the input capacitance of the main MOSFET.
http://onsemi.com
27
ADP3212, NCP3218, NCP3218G
The most effective way to reduce switching loss is to use
lower gate capacitance devices.
The conduction loss of the main MOSFET is given by the
following equation:
ƪǒ Ǔ
IO
n MF
P C(MF) + D
2
) 1
12
ǒ
n
Ǔƫ
IR
n MF
RDS is the total low−side MOSFET on resistance.
CR is the internal ramp capacitor value.
Another consideration in the selection of RR is the size of
the internal ramp voltage (see Equation 19). For stability and
noise immunity, keep the ramp size larger than 0.5 V. Taking
this into consideration, the value of RR in this example is
selected as 280 kW.
The internal ramp voltage magnitude can be calculated as
follows:
2
R DS(MF)
(eq. 16)
where RDS(MF) is the on resistance of the MOSFET.
Typically, a user wants the highest speed (low CISS)
device for a main MOSFET, but such a device usually has
higher on resistance. Therefore, the user must select a device
that meets the total power dissipation (about 0.8 W to 1.0 W
for an 8−lead SOIC) when combining the switching and
conduction losses.
For example, an IRF7821 device can be selected as the
main MOSFET (four in total; that is, nMF = 4), with
approximately
CISS = 1010 pF (maximum) and RDS(MF) = 18 mW
(maximum at TJ = 120°C), and an IR7832 device can be
selected as the synchronous MOSFET (four in total; that is,
nSF = 4), with
RDS(SF) = 6.7 mW (maximum at TJ = 120°C). Solving for the
power dissipation per MOSFET at IO = 40 A and IR = 9.0 A
yields 630 mW for each synchronous MOSFET and
590 mW for each main MOSFET. A third synchronous
MOSFET is an option to further increase the conversion
efficiency and reduce thermal stress.
Finally, consider the power dissipation in the driver for
each phase. This is best described in terms of the QG for the
MOSFETs and is given by the following equation:
ƪ
P DRV +
f SW
2
n
(n MF
Q GMF ) n SF
ƫ
Q GSF) ) I CC
VR +
The size of the internal ramp can be increased or
decreased. If it is increased, stability and transient response
improves but thermal balance degrades. Conversely, if the
ramp size is decreased, thermal balance improves but
stability and transient response degrade. In the denominator
of Equation 18, the factor of 3 sets the minimum ramp size
that produces an optimal combination of good stability,
transient response, and thermal balance.
Current Limit Setpoint
To select the current limit setpoint, the resistor value for
RCLIM must be determined. The current limit threshold for
the APD3212/NCP3218/NCP3218G is set with RCLIM.
RCLIM can be found using the following equation:
R LIM +
VCC
Ramp Resistor Selection
The ramp resistor (RR) is used to set the size of the internal
PWM ramp. The value of this resistor is chosen to provide
the best combination of thermal balance, stability, and
transient response. Use the following expression to
determine a starting value:
RR +
AR L
A D R DS
3
0.5 360 nH
+ 462 kW
5 5.2 mW 5 pF
CR
I LIM R O
60 mA
(eq. 20)
where:
RLIM is the current limit resistor.
RO is the output load line.
ILIM is the current limit setpoint.
When the APD3212/NCP3218/NCP3218G is configured
for 3 phase operation, the equation above is used to set the
current limit. When the APD3212/NCP3218/NCP3218G
switches from 3 phase to 1 phase operation by PSI or
DPRSLP signal, the current is single phase is one third of the
current limit in 3 phase.
When the APD3212/NCP3218/NCP3218G is configured
for 2 phase operation, the equation above is used to set the
current limit. When the APD3212/NCP3218/NCP3218G
switches from 2 phase to 1 phase operation by PSI or
DPRSLP signal, the current is single phase is one half of the
current limit in 2 phase.
When the APD3212/NCP3218/NCP3218G is configured
for 1 phase operation, the equation above is used to set the
current limit.
where QGMF is the total gate charge for each main
MOSFET, and QGSF is the total gate charge for each
synchronous MOSFET.
The previous equation also shows the standby dissipation
(ICC times the VCC) of the driver.
3
(eq. 19)
0.5 (1 * 0.061) 1.150 V
VR +
+ 0.83 V
462 kW 5 pF 280 kHz
(eq. 17)
RR +
A R (1 * D) V VID
R R C R f SW
(eq. 18)
Current Monitor
The APD3212/NCP3218/NCP3218G has output current
monitor. The IMON pin sources a current proportional to the
total inductor current. A resistor, RMON, from IMON to
FBRTN sets the gain of the output current monitor. A 0.1 mF
is placed in parallel with RMON to filter the inductor current
where:
AR is the internal ramp amplifier gain.
AD is the current balancing amplifier gain.
http://onsemi.com
28
ADP3212, NCP3218, NCP3218G
ripple and high frequency load transients. Since the IMON
pin is connected directly to the CPU, it is clamped to prevent
it from going above 1.15 V.
The IMON pin current is equal to the RLIM times a fixed
gain of 4. RMON can be found using the following equation:
R MON +
1.15 V R LIM
4 R O I FS
Gain
−20 dB/dec
(eq. 21)
−20 dB/dec
where:
RMON is the current monitor resistor. RMON is connected
from IMON pin to FBRTN.
RLIM is the current limit resistor.
RO is the output load line resistance.
IFS is the output current when the voltage on IMON is at full
scale.
0 dB
COMP
CB
f Z1 +
2p
1
CA
f Z2 +
2p
1
C FB
f P0 +
2p
1
(C A ) C B)
f P1 +
2p
CA ) CB
RA CB
RE + n
2
(eq. 22)
RA
(eq. 23)
R FB
L
n
RO ) AD
(eq. 24)
R FB
(eq. 25)
CA
R DS )
(R O * RȀ) )
T B + (R X ) RȀ * R O)
V RT
TC +
TD +
R L V RT
)
V VID
(1 * (n D)) V RT
C X R O V VID
TA + CX
ADP3212
CFB
Frequency
The expressions that follow compute the time constants
for the poles and zeros in the system and are intended to yield
an optimal starting point for the design; some adjustments
may be necessary to account for PCB and component
parasitic effects (see the Tuning Procedure for 12 section):
REFERENCE
VOLTAGE
CA
RA
fZ2
The following equations give the locations of the poles
and zeros shown in Figure 32:
Optimized compensation of the APD3212/NCP3218/
NCP3218G allows the best possible response of the
regulator’s output to a load change. The basis for
determining the optimum compensation is to make the
regulator and output decoupling appear as an output
impedance that is entirely resistive over the widest possible
frequency range, including dc, and that is equal to the droop
resistance (RO). With the resistive output impedance, the
output voltage droops in proportion with the load current at
any load current slew rate, ensuring the optimal position and
allowing the minimization of the output decoupling.
With the multimode feedback structure of the
APD3212/NCP3218/NCP3218G, it is necessary to set the
feedback compensation so that the converter’s output
impedance works in parallel with the output decoupling. In
addition, it is necessary to compensate for the several poles
and zeros created by the output inductor and decoupling
capacitors (output filter).
A Type III compensator on the voltage feedback is
adequate for proper compensation of the output filter.
Figure 31 shows the Type III amplifier used in the
APD3212/NCP3218/NCP3218G. Figure 32 shows the
locations of the two poles and two zeros created by this
amplifier.
FB
fP1
Figure 32. Poles and Zeros of Voltage Error Amplifier
Feedback Loop Compensation Design
VOLTAGE ERROR
AMPLIFIER
fP0
fZ1
ǒ
L*
V VID
CX
LX
RO
CX
R O * RȀ
RX
(eq. 26)
(eq. 27)
(eq. 28)
Ǔ
AD RDS
2 f SW
(eq. 29)
RE
CX CZ RO 2
(R O * RȀ) ) C Z
RO
(eq. 30)
where:
R′ is the PCB resistance from the bulk capacitors to the
ceramics and is approximately 0.4 mW (assuming an 8−layer
motherboard).
RDS is the total low−side MOSFET for on resistance per
phase.
AD is 5.
VRT is 1.25 V.
LX is 150 pH for the six Panasonic SP capacitors.
OUTPUT
VOLTAGE
RFB
Figure 31. Voltage Error Amplifier
http://onsemi.com
29
ADP3212, NCP3218, NCP3218G
The compensation values can be calculated as follows:
CA +
n
RO
RE
TA
(eq. 31)
RB
RA +
TC
CA
(eq. 32)
CB +
TB
RB
(eq. 33)
C FB +
C Snubber +
TD
RA
I CRMS + 0.18
40 A
VRTT
D
Ǹ2
*1
(eq. 35)
R
1
* 1 + 9.6 A
0.18
1
f Ringing
C OSS
VCC
5V
RTTSET1
CTT
RTH1
Figure 33. Single−Point Thermal Monitoring
To monitor the temperature of multiple−point hot spots,
use the configuration shown in Figure 34. If any of the
monitored hot spots reaches the alarm temperature, the
VRTT signal is asserted. The following calculation sets the
alarm temperature:
It is important in any buck topology to use a
resistor−capacitor snubber across the low side power
MOSFET. The RC snubber dampens ringing on the switch
node when the high side MOSFET turns on. The switch node
ringing could cause EMI system failures and increased
stress on the power components and controller. The RC
snubber should be placed as close as possible to the low side
MOSFET. Typical values for the resistor range from 1 W to
10 W. Typical values for the capacitor range from 330 pF to
4.7 nF. The exact value of the RC snubber depends on the
PCB layout and MOSFET selection. Some fine tuning must
be done to find the best values. The equation below is used
to find the starting values for the RC subber.
p
R
ADP3212
RC Snubber
2
(eq. 38)
TTSNS
where IO is the output current.
In a typical notebook system, the battery rail decoupling
is achieved by using MLC capacitors or a mixture of MLC
capacitors and bulk capacitors. In this example, the input
capacitor bank is formed by eight pieces of 10 mF, 25 V MLC
capacitors, with a ripple current rating of about 1.5 A each.
R Snubber +
f Switching
To monitor the temperature of a single−point hot spot, set
RTTSET1 equal to the NTC thermistor’s resistance at the alarm
temperature. For example, if the alarm temperature for VRTT
is 100°C and a Vishey thermistor (NTHS−0603N011003J)
with a resistance of 100 kW at 25°C, or 6.8 kW at 100°C, is
used, the user can set RTTSET1 equal to 6.8 kW (the RTH1 at
100°C).
In continuous inductor−current mode, the source current
of the high−side MOSFET is approximately a square wave
with a duty ratio equal to n × VOUT/VIN and an amplitude
that is one−nth of the maximum output current. To prevent
large voltage transients, use a low ESR input capacitor sized
for the maximum rms current. The maximum rms capacitor
current occurs at the lowest input voltage and is given by:
Ǹn
V Input 2
Selecting Thermal Monitor Components
CIN Selection and Input Current di/dt Reduction
IO
(eq. 37)
R Snubber
Where RSnubber is the snubber resistor.
CSnubber is the snubber capacitor.
fRininging is the frequency of the ringing on the switch node
when the high side MOSFET turns on.
COSS is the low side MOSFET output capacitance at VInput.
This is taken from the low side MOSFET data sheet.
Vinput is the input voltage.
fSwitching is the switching frequency.
PSnubber is the power dissipated in RSnubber.
The standard values for these components are subject to
the tuning procedure described in the Tuning Procedure for
12 section.
I CRMS + D
1
f Ringing
P Snubber + C Snubber
(eq. 34)
1
p
1ń2 )
R TTSET1 +
1ń2 *
VFD
VREF
VFD
VREF
(eq. 39)
R TH1AlarmTemperature
where VFD is the forward drop voltage of the parallel diode.
Because the forward current is very small, the forward
drop voltage is very low, that is, less than 100 mV. Assuming
the same conditions used for the single−point thermal
monitoring example—that is, an alarm temperature of
100°C and use of an NTHS−0603N011003J Vishay
thermistor—solving Equation 39 gives a RTTSET of 7.37 kW,
and the closest standard resistor is 7.32 kW (1%).
(eq. 36)
http://onsemi.com
30
ADP3212, NCP3218, NCP3218G
5V
VCC
RTTSET3
37
ADP3212
VRTT
−
RTTSET1 RTTSET2
R
TTSNS
7. Measure the output ripple with no load and with a
full load with scope, making sure both are within
the specifications.
11
1. Remove the dc load from the circuit and connect a
dynamic load.
2. Connect the scope to the output voltage and set it
to dc coupling mode with a time scale of
100 ms/div.
3. Set the dynamic load for a transient step of about
40 A at 1 kHz with 50% duty cycle.
4. Measure the output waveform (note that use of a
dc offset on the scope may be necessary to see the
waveform). Try to use a vertical scale of
100 mV/div or finer.
5. The resulting waveform will be similar to that
shown in Figure 35. Use the horizontal cursors to
measure VACDRP and VDCDRP, as shown in
Figure 35. Do not measure the undershoot or
overshoot that occurs immediately after the step.
RTH3
+
R
Set the AC Load Line
CTT
RTH1
RTH2
Figure 34. Multiple−Point Thermal Monitoring
The number of hot spots monitored is not limited. The
alarm temperature of each hot spot can be individually set by
using different values for RTTSET1, RTTSET2, ... RTTSETn.
Tuning Procedure for
APD3212/NCP3218/NCP3218G
Set Up and Test the Circuit
1. Build a circuit based on the compensation values
computed from the design spreadsheet.
2. Connect a dc load to the circuit.
3. Turn on the APD3212/NCP3218/NCP3218G and
verify that it operates properly.
4. Check for jitter with no load and full load
conditions.
VACDRP
Set the DC Load Line
1. Measure the output voltage with no load (VNL)
and verify that this voltage is within the specified
tolerance range.
2. Measure the output voltage with a full load when
the device is cold (VFLCOLD). Allow the board to
run for ~10 minutes with a full load and then
measure the output when the device is hot
(VFLHOT). If the difference between the two
measured voltages is more than a few millivolts,
adjust RCS2 using Equation 40.
R CS2(NEW) + R CS2(OLD)
Figure 35. AC Load Line Waveform
6. If the difference between VACDRP and VDCDRP is
more than a couple of millivolts, use Equation 42
to adjust CCS. It may be necessary to try several
parallel values to obtain an adequate one because
there are limited standard capacitor values
available (it is a good idea to have locations for
two capacitors in the layout for this reason).
V NL * V FLCOLD
(eq. 40)
V NL * V FLHOT
3. Repeat Step 2 until no adjustment of RCS2 is
needed.
4. Compare the output voltage with no load to that
with a full load using 5 A steps. Compute the load
line slope for each change and then find the
average to determine the overall load line slope
(ROMEAS).
5. If the difference between ROMEAS and RO is more
than 0.05 mW, use the following equation to adjust
the RPH values:
R PH(NEW) + R PH(OLD)
R OMEAS
RO
VDCDRP
C CS(NEW) + C CS(OLD)
V ACDRP
V DCDRP
(eq. 42)
7. Repeat Steps 5 and 6 until no adjustment of CCS is
needed. Once this is achieved, do not change CCS
for the rest of the procedure.
8. Set the dynamic load step to its maximum step size
(but do not use a step size that is larger than
needed) and verify that the output waveform is
square, meaning VACDRP and VDCDRP are equal.
9. Ensure that the load step slew rate and the
powerup slew rate are set to ~150 A/ms to
250 A/ms (for example, a load step of 50 A should
take 200 ns to 300 ns) with no overshoot. Some
(eq. 41)
6. Repeat Steps 4 and 5 until no adjustment of RPH is
needed. Once this is achieved, do not change RPH,
RCS1, RCS2, or RTH for the rest of the procedure.
http://onsemi.com
31
ADP3212, NCP3218, NCP3218G
dynamic loads have an excessive overshoot at
powerup if a minimum current is incorrectly set
(this is an issue if a VTT tool is in use).
VTRANREL
Set the Initial Transient
VDROOP
1. With the dynamic load set at its maximum step
size, expand the scope time scale to 2 ms/div to
5 ms/div. This results in a waveform that may have
two overshoots and one minor undershoot before
achieving the final desired value after VDROOP
(see Figure 36).
Figure 37. Transient Setting Waveform, Load Release
VDROOP
Layout and Component Placement
The following guidelines are recommended for optimal
performance of a switching regulator in a PC system.
General Recommendations
VTRAN1
1. For best results, use a PCB of four or more layers.
This should provide the needed versatility for
control circuitry interconnections with optimal
placement; power planes for ground, input, and
output; and wide interconnection traces in the rest
of the power delivery current paths. Keep in mind
that each square unit of 1 oz copper trace has a
resistance of ~0.53 mW at room temperature.
2. When high currents must be routed between PCB
layers, vias should be used liberally to create
several parallel current paths so that the resistance
and inductance introduced by these current paths is
minimized and the via current rating is not
exceeded.
3. If critical signal lines (including the output voltage
sense lines of the APD3212/NCP3218/
NCP3218G) must cross through power circuitry, it
is best if a signal ground plane can be interposed
between those signal lines and the traces of the
power circuitry. This serves as a shield to
minimize noise injection into the signals at the
expense of increasing signal ground noise.
4. An analog ground plane should be used around
and under the APD3212/NCP3218/NCP3218G for
referencing the components associated with the
controller. This plane should be tied to the nearest
ground of the output decoupling capacitor, but
should not be tied to any other power circuitry to
prevent power currents from flowing into the
plane.
VTRAN2
Figure 36. Transient Setting Waveform, Load Step
2. If both overshoots are larger than desired, try the
following adjustments in the order shown.
a. Increase the resistance of the ramp resistor
(RRAMP) by 25%.
b. For VTRAN1, increase CB or increase the switching
frequency.
c. For VTRAN2, increase RA by 25% and decrease CA
by 25%.
If these adjustments do not change the response, it is
because the system is limited by the output
decoupling. Check the output response and the
switching nodes each time a change is made to
ensure that the output decoupling is stable.
3. For load release (see Figure 37), if VTRANREL is
larger than the value specified by IMVP−6.5, a
greater percentage of output capacitance is needed.
Either increase the capacitance directly or decrease
the inductor values. (If inductors are changed,
however, it will be necessary to redesign the
circuit using the information from the spreadsheet
and to repeat all tuning guide procedures).
http://onsemi.com
32
ADP3212, NCP3218, NCP3218G
the liberal use of vias, both directly on the
mounting pad and immediately surrounding it, is
recommended. Two important reasons for this are
improved current rating through the vias and
improved thermal performance from vias extended
to the opposite side of the PCB, where a plane can
more readily transfer heat to the surrounding air.
To achieve optimal thermal dissipation, mirror the
pad configurations used to heat sink the MOSFETs
on the opposite side of the PCB. In addition,
improvements in thermal performance can be
obtained using the largest possible pad area.
3. The output power path should also be routed to
encompass a short distance. The output power path
is formed by the current path through the inductor,
the output capacitors, and the load.
4. For best EMI containment, a solid power ground
plane should be used as one of the inner layers and
extended under all power components.
5. The components around the APD3212/NCP3218/
NCP3218G should be located close to the
controller with short traces. The most important
traces to keep short and away from other traces are
those to the FB and CSSUM pins. Refer to
Figure 30 for more details on the layout for the
CSSUM node.
6. The output capacitors should be connected as close
as possible to the load (or connector) that receives
the power (for example, a microprocessor core). If
the load is distributed, the capacitors should also
be distributed and generally placed in greater
proportion where the load is more dynamic.
7. Avoid crossing signal lines over the switching
power path loop, as described in the Power
Circuitry section.
8. Connect a 1 mF decoupling ceramic capacitor from
VCC to GND. Place this capacitor as close as
possible to the controller. Connect a 4.7 mF
decoupling ceramic capacitor from PVCC to
PGND. Place capacitor as close as possible to the
controller.
Signal Circuitry
1. The output voltage is sensed and regulated
between the FB and FBRTN pins, and the traces of
these pins should be connected to the signal
ground of the load. To avoid differential mode
noise pickup in the sensed signal, the loop area
should be as small as possible. Therefore, the FB
and FBRTN traces should be routed adjacent to
each other, atop the power ground plane, and back
to the controller.
2. The feedback traces from the switch nodes should
be connected as close as possible to the inductor.
The CSREF signal should be Kelvin connected to
the center point of the copper bar, which is the
VCORE common node for the inductors of all the
phases.
3. On the back of the APD3212/NCP3218/
NCP3218G package, there is a metal pad that can
be used to heat sink the device. Therefore, running
vias under the APD3212/NCP3218/NCP3218G is
not recommended because the metal pad may
cause shorting between vias.
Power Circuitry
1. The switching power path on the PCB should be
routed to encompass the shortest possible length to
minimize radiated switching noise energy (that is,
EMI) and conduction losses in the board. Failure
to take proper precautions often results in EMI
problems for the entire PC system as well as
noise−related operational problems in the
power−converter control circuitry. The switching
power path is the loop formed by the current path
through the input capacitors and the power
MOSFETs, including all interconnecting PCB
traces and planes. The use of short, wide
interconnection traces is especially critical in this
path for two reasons: it minimizes the inductance
in the switching loop, which can cause high energy
ringing, and it accommodates the high current
demand with minimal voltage loss.
2. When a power−dissipating component (for
example, a power MOSFET) is soldered to a PCB,
ORDERING INFORMATION
Temperature Range
Package
Package Option
Shipping†
ADP3212MNR2G
−40°C to 100°C
48−Lead Frame Chip Scale Pkg [QFN_VQ]
7x7 mm, 0.5 mm pitch
CP−48−1
2500 / Tape & Reel
NCP3218MNR2G
−40°C to 100°C
48−Lead Frame Chip Scale Pkg [QFN_VQ]
6x6 mm, 0.4 mm pitch
CP−48−1
2500 / Tape & Reel
NCP3218MNTWG
−40°C to 100°C
48−Lead Frame Chip Scale Pkg [QFN_VQ]
6x6 mm, 0.4 mm pitch
CP−48−1
2500 / Tape & Reel
NCP3218GMNR2G
−40°C to 100°C
48−Lead Frame Chip Scale Pkg [QFN_VQ]
6x6 mm, 0.4 mm pitch
CP−48−1
2500 / Tape & Reel
Device Number*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
*The “G’’ suffix indicates Pb−Free package.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
http://onsemi.com
33
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
QFN48 7x7, 0.5P
CASE 485AJ−01
ISSUE O
1 48
ÈÈÈ
ÈÈÈ
ÈÈÈ
SCALE 2:1
D
PIN 1
LOCATION
DATE 27 APR 2007
NOTES:
1. DIMENSIONS AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO THE PLATED
TERMINAL AND IS MEASURED ABETWEEN
0.15 AND 0.30 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A B
E
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L
2X
0.15 C
DETAIL A
OPTIONAL CONSTRUCTION
2X SCALE
2X
0.15 C
TOP VIEW
(A3)
0.05 C
GENERIC
MARKING DIAGRAM*
A
0.08 C
A1
NOTE 4
C
SIDE VIEW
D2
DETAIL A
25
12
E2
1
36
48
48X
L
1
SEATING
PLANE
XXXXXXXXX
XXXXXXXXX
AWLYYWW
K
13
37
e
e/2
48X
BOTTOM VIEW
b
0.10 C A B
0.05 C
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.20
0.30
7.00 BSC
5.00
5.20
7.00 BSC
5.00
5.20
0.50 BSC
0.20
−−−
0.30
0.50
A
= Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
2X
NOTE 3
5.20
1
2X
7.30
48X
0.63
48X
0.30
0.50 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24490D
QFN48 7X7, 0.50P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
QFN48 6x6, 0.4P
CASE 485BA
ISSUE A
DATE 16 FEB 2010
1 48
SCALE 2:1
PIN ONE
LOCATION
2X
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
L1
DETAIL A
E
ALTERNATE TERMINAL
CONSTRUCTIONS
ÉÉÉ
ÉÉÉ
ÉÉÉ
0.10 C
2X
EXPOSED Cu
TOP VIEW
0.10 C
A
(A3)
DETAIL B
0.10 C
DETAIL B
A1
SIDE VIEW
C
D2
DETAIL A
MOLD CMPD
ALTERNATE
CONSTRUCTION
0.08 C
NOTE 4
L
L
A B
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSIONS: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30mm FROM TERMINAL TIP
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.15
0.25
6.00 BSC
4.40
4.60
6.00 BSC
4.40
4.60
0.40 BSC
0.20 MIN
0.30
0.50
0.00
0.15
GENERIC
MARKING DIAGRAM*
SEATING
PLANE
K
13
XXXXXXXXX
XXXXXXXXX
AWLYYWWG
25
E2
48X
XXX = Specific Device Code
A
= Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package
L
1
e
37
48
48X
e/2
BOTTOM VIEW
b
0.07 C A B
0.05 C
NOTE 3
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
SOLDERING FOOTPRINT*
6.40
4.66
48X
0.68
4.66
PKG
OUTLINE
6.40
0.40
PITCH
48X
0.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON39236E
QFN48, 6x6, 0.4MM PITCH
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
工商网监
湘ICP备2023018690号
