BC237BRL1G

BC237B Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Emitter Voltage VCES 50 Vdc Collector −Emitter Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 100 mAdc Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 350 2.8 mW mW/°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 1.0 8.0 W mW/°C Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 1 12 3 STRAIGHT LEAD BULK PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 357 °C/W Thermal Resistance, Junction−to−Case RqJC 125 °C/W 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BC23 7B AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† TO−92 5000 Units / Bulk BC237BG TO−92 (Pb−Free) 5000 Units / Bulk BC237BRL1G TO−92 (Pb−Free) 2000 / Tape & Reel Device BC237B *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 5 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC237/D BC237B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 45 − − 6.0 − − − − 0.2 0.2 15 4.0 − 150 − (IC = 2.0 mA, VCE = 5.0 V) 200 290 460 (IC = 100 mA, VCE = 5.0 V) − 180 − − − 0.07 0.2 0.2 0.6 − − 0.6 − 0.83 1.05 − 0.55 − 0.5 0.62 0.83 − 0.7 − − 150 100 200 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO Emitter −Base Breakdown Voltage (IE = 100 mA, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 50 V, VBE = 0) (VCE = 50 V, VBE = 0) TA = 125°C V V ICES nA mA ON CHARACTERISTICS hFE DC Current Gain (IC = 10 mA, VCE = 5.0 V) Collector −Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VBE(sat) Base−Emitter On Voltage (IC = 100 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) VBE(on) − V V V DYNAMIC CHARACTERISTICS fT Current −Gain — Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) MHz Collector−Base Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cobo − − 4.5 pF Emitter−Base Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cibo − 8.0 − pF Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz) NF − 2.0 10 http://onsemi.com 2 dB BC237B 1.0 VCE = 10 V TA = 25°C 1.5 0.9 0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 1.0 0.8 0.6 0.4 0.7 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 Figure 2. “Saturation” and “On” Voltages 10 400 300 7.0 C, CAPACITANCE (pF) 200 VCE = 10 V TA = 25°C 100 80 60 TA = 25°C Cib 5.0 3.0 Cob 2.0 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 1.0 0.4 50 Figure 3. Current−Gain — Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) f T, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz) TA = 25°C 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitances 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25°C 140 130 120 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) 5.0 Figure 5. Base Spreading Resistance http://onsemi.com 3 10 20 40 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM SCALE 1:1 1 12 3 STRAIGHT LEAD BULK PACK DATE 09 MAR 2007 2 3 BENT LEAD TAPE & REEL AMMO PACK A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. STRAIGHT LEAD BULK PACK R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X N 1 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K DIM A B C D G J K N P R V D X X J V 1 C N SECTION X−X MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- STYLES ON PAGE 2 DOCUMENT NUMBER: STATUS: 98ASB42022B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TO−92 (TO−226) http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 3 TO−92 (TO−226) CASE 29−11 ISSUE AM DATE 09 MAR 2007 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 6: PIN 1. GATE 2. SOURCE & SUBSTRATE 3. DRAIN STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 8: PIN 1. DRAIN 2. GATE 3. SOURCE & SUBSTRATE STYLE 9: PIN 1. BASE 1 2. EMITTER 3. BASE 2 STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 11: PIN 1. ANODE 2. CATHODE & ANODE 3. CATHODE STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 STYLE 13: PIN 1. ANODE 1 2. GATE 3. CATHODE 2 STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER STYLE 18: PIN 1. ANODE 2. CATHODE 3. NOT CONNECTED STYLE 19: PIN 1. GATE 2. ANODE 3. CATHODE STYLE 20: PIN 1. NOT CONNECTED 2. CATHODE 3. ANODE STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 24: PIN 1. EMITTER 2. COLLECTOR/ANODE 3. CATHODE STYLE 25: PIN 1. MT 1 2. GATE 3. MT 2 STYLE 26: PIN 1. VCC 2. GROUND 2 3. OUTPUT STYLE 27: PIN 1. MT 2. SUBSTRATE 3. MT STYLE 28: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 29: PIN 1. NOT CONNECTED 2. ANODE 3. CATHODE STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE STYLE 31: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 32: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 33: PIN 1. RETURN 2. INPUT 3. OUTPUT STYLE 34: PIN 1. INPUT 2. GROUND 3. LOGIC STYLE 35: PIN 1. GATE 2. COLLECTOR 3. EMITTER DOCUMENT NUMBER: STATUS: 98ASB42022B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TO−92 (TO−226) http://onsemi.com 2 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 2 OFXXX 3 DOCUMENT NUMBER: 98ASB42022B PAGE 3 OF 3 ISSUE AM REVISION ADDED BENT−LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA. DATE 09 MAR 2007 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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