BC488BRL1

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Other names and brands may be claimed as the property of others. BC488B High Current Transistors PNP Silicon Features • Pb−Free Package is Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO −60 Vdc Collector - Base Voltage VCBO −60 Vdc Emitter-Base Voltage VEBO −4.0 Vdc Collector Current − Continuous IC −1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C −55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 1 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 MARKING DIAGRAM BC 488B AYWW G G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W BC488B = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC488BRL1 BC488BRL1G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 1 1 Package Shipping † TO−92 2000/Tape & Reel TO−92 (Pb−Free) 2000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC488B/D BC488B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0) V(BR)CEO −60 − − Vdc Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO −60 − − Vdc Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −4.0 − − Vdc ICBO − − −100 nAdc 40 160 15 − 260 − − 400 − − − −0.25 −0.5 −0.5 − − − −0.9 −1.0 −1.2 − fT − 150 − MHz Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cob − 9.0 − pF Input Capacitance (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Cib − 110 − pF OFF CHARACTERISTICS Collector Cutoff Current (VCB = −40 Vdc, IE = 0) ON CHARACTERISTICS* DC Current Gain (IC = −10 mAdc, VCE = −2.0 Vdc) (IC = −100 mAdc, VCE = −2.0 Vdc) (IC = −1.0 Adc, VCE = −5.0 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) (IC = −1.0 Adc, IB = −100 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) (IC = −1.0 Adc, IB = −100 mAdc) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. TURN−ON TIME 100 +10 V 0 tr = 3.0 ns RB Vin 5.0 mF +VBB VCC +40 V −1.0 V 5.0 ms TURN−OFF TIME 100 RL VCC +40 V 100 OUTPUT RB Vin 5.0 mF *CS < 6.0 pF 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 100 RL OUTPUT *CS < 6.0 pF 200 100 VCE = −2.0 V TJ = 25°C 70 C, CAPACITANCE (pF) f, T CURRENT−GAIN  BANDWIDTH PRODUCT (MHz) BC488B 100 70 50 TJ = 25°C Cibo 50 30 20 10 Cobo 30 7.0 20 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 IC, COLLECTOR CURRENT (mA) 5.0 −0.1 −0.2 −200 −0.5 −1.0 −2.0 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current−Gain − Bandwidth Product −50 −100 Figure 3. Capacitance 1.0 k 700 500 ts 300 t, TIME (ns) 200 100 70 50 td @ VBE(off) = −0.5 V tf VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 30 20 tr 10 −5.0 −7.0 −10 −20 −30 −50 −70 −100 −200 −300 IC, COLLECTOR CURRENT (mA) −500 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Switching Time 1.0 0.7 0.5 D = 0.5 0.2 0.1 0.3 0.2 0.1 0.07 0.05 P(pk) t1 0.02 t2 0.01 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−469) TJ(pk) − TC = P(pk) ZqJC(t) TJ(pk) − TA = P(pk) ZqJA(t) SINGLE PULSE 0.03 SINGLE PULSE ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA 0.02 0.01 1.0 2.0 5.0 10 20 50 100 200 t, TIME (ms) 500 1.0k Figure 5. Thermal Response http://onsemi.com 3 2.0k 5.0k 10k 20k 50k 100 BC488B −1.0 k −700 1.0 100 ms TJ = 25°C 0.8 −300 1.0 s −200 1.0 ms TC = 25°C TA = 25°C −100 −70 −50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −30 −20 −10 −1.0 VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) −500 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 BC490 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0 0.5 1.0 2.0 1.0 500 200 500 −0.8 RθVB, TEMPERATURE COEFFICIENT (mV/°C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 200 Figure 7. “On” Voltages Figure 6. Active Region, Safe Operating Area TJ = 25°C 0.8 0.6 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) −1.2 50 mA IC = 10 mA 100 mA 250 mA 500 mA −1.6 0.4 −2.0 −2.4 0.2 0 0.05 RqVB for VBE 0.1 0.2 1.0 10 0.5 2.0 5.0 IC, COLLECTOR CURRENT (mA) 20 −2.8 0.5 50 1.0 2.0 10 100 5.0 20 50 IC, COLLECTOR CURRENT (mA) Figure 9. Base−Emitter Temperature Coefficient Figure 8. Collector Saturation Region 400 hFE , DC CURRENT GAIN TJ = 125°C VCE = −1.0 V 200 25°C −55°C 100 80 60 40 −0.5 −0.7 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 IC, COLLECTOR CURRENT (mA) Figure 10. DC Current Gain http://onsemi.com 4 −50 −70 −100 −200 −300 −500 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) BC488B −1.0 TJ = 25°C VBE(sat) @ IC/IB = 10 −0.6 VBE(on) @ VCE = −1.0 V −0.4 −0.2 VCE(sat) @ IC/IB = 10 0 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 TJ = 25°C −0.8 −0.6 IC = −10 mA −50 mA 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 IB, BASE CURRENT (mA) −1.6 RqVB for VBE −2.4 −1.0 −2.0 −10 −20 Figure 12. Collector Saturation Region −1.2 −2.8 −0.5 −250 mA −500 mA −0.2 −0.8 −2.0 −100 mA −0.4 Figure 11. “On” Voltages RθVB, TEMPERATURE COEFFICIENT (mV/°C) V, VOLTAGE (VOLTS) −0.8 −1.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 Figure 13. Base−Emitter Temperature Coefficient http://onsemi.com 5 −50 BC488B PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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