BC637RL1G

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Collector - Emitter Voltage BC637 BC639 BC637 BC639 Symbol VCEO Value 60 80 60 80 5.0 1.0 625 5.0 800 12 −55 to +150 Unit Vdc 1 EMITTER 3 BASE Collector - Base Voltage VCBO Vdc Emitter - Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg Vdc Adc mW mW/°C mW mW/°C °C TO−92 CASE 29 STYLE 14 12 1 2 3 STRAIGHT LEAD BULK PACK THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAMS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BC 63x AYWW G G BC63 9−16 AYWW G G x = 7 or 9 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. February, 2011 − Rev. 1 1 Publication Order Number: BC637/D BC637, BC639, BC639−16 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector − Emitter Zero−Gate Breakdown Voltage(Note 1) (IC = 100 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125°C) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) (IC = 500 mA, VCE = 2.0 V) Collector − Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base − Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%. fT Cob Cib − − − 200 7.0 50 − − − MHz pF pF hFE BC637 BC639 BC639−16ZLT1 VCE(sat) VBE(on) 25 40 40 100 25 − − − − − − − − − − 160 160 250 − 0.5 1.0 − BC637 BC639 BC639−16 BC637 BC639 V(BR)CEO 60 80 120 60 80 5.0 − − − − − − − − − − − − Vdc Symbol Min Typ Max Unit V(BR)CES V(BR)CBO Vdc Vdc V(BR)EBO ICBO Vdc − − − − 100 10 nAdc mAdc Vdc Vdc ORDERING INFORMATION Device BC637G BC637RL1G BC639G BC639RL1G BC639ZL1G BC639−16ZL1G Package TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) Shipping† 5000 Units / Bulk 2000 / Tape & Reel 5000 Units / Bulk 2000 / Tape & Reel 2000 / Ammo Box 2000 / Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BC637, BC639, BC639−16 1000 500 IC, COLLECTOR CURRENT (mA) 200 100 50 20 10 5 2 1 1 PD TA 25°C PD TC 25°C BC635 BC637 BC639 100 PD TC 25°C PD TA 25°C SOA = 1S hFE, DC CURRENT GAIN 200 500 VCE = 2 V 100 50 2 345 7 10 20 30 40 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 20 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 1. Active Region Safe Operating Area f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) Figure 2. DC Current Gain 500 300 V, VOLTAGE (VOLTS) 1 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V VCE = 2 V 100 0.6 0.4 50 0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 0 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 3. Current−Gain — Bandwidth Product Figure 4. “Saturation” and “On” Voltages θV, TEMPERATURE COEFFICIENTS (mV/°C) -0.2 -1.0 VCE = 2 VOLTS DT = 0°C to +100°C qV for VBE -2.2 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 -1.6 Figure 5. Temperature Coefficients http://onsemi.com 3 BC637, BC639, BC639−16 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A R P L SEATING PLANE B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX H V 1 D G J C N N SECTION X−X DIM A B C D G H J K L N P R V R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE K G XX V 1 D J C N SECTION X−X DIM A B C D G J K N P R V ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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