BCW33LT1D

BCW33LT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2), TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 − 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit SOT−23 (TO−236AB) CASE 318 STYLE 6 MARKING DIAGRAM D3 M G G D3 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. ORDERING INFORMATION Device BCW33LT1G BCW33LT3G Package SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3000/Tape & Reel 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 4 1 Publication Order Number: BCW33LT1/D BCW33LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 10 mAdc, IB = 0) Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100°C) ON CHARACTERISTICS DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector − Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) Base − Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) Cobo NF − − 4.0 10 pF dB hFE 420 VCE(sat) VBE(on) − 0.55 800 Vdc 0.25 Vdc 0.70 − V(BR)CEO V(BR)CBO V(BR)EBO ICBO 32 32 5.0 − − − Vdc Vdc Vdc Symbol Min Max Unit − − 100 10 nAdc mAdc EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V 300 ns DUTY CYCLE = 2% +10.9 V 10 k 275 10 < t1 < 500 ms DUTY CYCLE = 2% 0 + 3.0 V t1 +10.9 V 10 k 275 - 0.5 V