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CAT4004BHU2-GT3

CAT4004BHU2-GT3

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    UFDFN8

  • 描述:

    IC LED DRIVER 4CH 25MA 8UDFN

  • 数据手册
  • 价格&库存
CAT4004BHU2-GT3 数据手册
CAT4003B, CAT4004B LED Driver, Constant Current Programmable, with 32 Dimming Levels Description http://onsemi.com The CAT4003B and CAT4004B provide respectively three and four matched low dropout current sources to drive LEDs. The CAT400XB requires no external RSET resistor. The LED current is internally set to 25 mA when the device is first enabled. Each LED channel includes an individual control loop allowing the device to handle a wide range of LED forward voltages while still maintaining tight current matching. The EN/DIM logic input supports the device enable and a digital dimming interface for setting the LED channel current with 32 linear dimming levels. LEDs can be powered directly from a Lithium−ion battery due to the low dropout (75 mV at 20 mA) current sinks. Package options are available in the 4−channel tiny 8−pad UDFN 2 mm x 2 mm with a max height of 0.55 mm, and 3− channel in the 6 −lead TSOT−23, TSOP and SC−70. Features • • • • • • • • • • 3, 4 LED Current Sinks with Tight Matching 32 Dimming Levels Low Dropout Driver 75 mV at 20 mA No Switching Noise Shutdown Current less than 1 mA 25 mA Max LED Current per Channel Dimming via 1−wire EZDim Interface Thermal Shutdown Protection RoHS Compliant 6−lead TSOT−23, TSOP, SC−70, and 8−pad UDFN 2 mm x 2 mm Packages Typical Applications • LCD Display Backlight • Cellular Phones • Digital Still Cameras UDFN−8 HU2 SUFFIX CASE 517AW TSOT23−6 TD SUFFIX CASE 419AF SC70−6 SD SUFFIX CASE 419AD TSOP−6 TS SUFFIX CASE 318G TYPICAL APPLICATION CIRCUIT VIN 2.4 V CIN to 5.5 V 1 mF LED1 LED2 LED3 VIN CAT4003B One Wire Programming 32 Steps EN/DIM GND This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. ORDERING INFORMATION See detailed ordering information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011 January, 2012 − Rev. 2 1 Publication Order Number: CAT4003B/D CAT4003B, CAT4004B MARKING DIAGRAMS BH A Y M BHA YM KLYM UDFN8 (2 x 2 mm) TSOT23−6L = CAT4004B Device Code = Assembly Location Code = Production Year (last digit) = Production Month: 1 − 9, O, N, D KL Y M = CAT4003B Device Code = Production Year (last digit) = Production Month: 1 − 9, O, N, D KLA L4AYW SC70−6L KL A TSOP−6 = CAT4003B Device Code = Assembly Location Code L4 = CAT4003B Device Code A = Assembly Location Code YW = Year and Work Week ORDERING INFORMATION (Note 1) Orderable Part Number CAT4003BTD−GT3 Package Finish Shipping (Note 2) TSOT−23, 6−Lead NiPdAu (RoHS Compliant) 3,000 / Tape & Reel CAT4003BTS−T3 TSOP, 6−Lead Matte−Tin (RoHS Compliant) 3,000 / Tape & Reel CAT4003BSD−GT3 SC−70, 6−Lead NiPdAu (RoHS Compliant) 3,000 / Tape & Reel UDFN, 8−Pad, 2 x 2 mm NiPdAu (RoHS Compliant) 3,000 / Tape & Reel CAT4004BHU2−GT3 1. For additional package and temperature options, please contact your nearest ON Semiconductor Sales office. 2. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device Nomenclature document, TND310/D, available at www.onsemi.com http://onsemi.com 2 CAT4003B, CAT4004B PIN CONNECTIONS (Top View) 1 1 EN/DIM GND LED1 LED2 VIN NC LED4 LED3 EN/DIM LED1 LED1 GND LED2 GND VIN LED3 EN/DIM CAT4004B UDFN8 2 x 2 mm CAT4003B TSOT23−6L, TSOP−6 1 LED2 LED3 VIN CAT4003B SC70−6L Table 1. PIN FUNCTIONS Pin Name Function EN/DIM Device Enable (active high) and Dimming Control GND Ground Reference LED1 LED1 Cathode Terminal LED2 LED2 Cathode Terminal LED3 LED3 Cathode Terminal LED4 LED4 Cathode Terminal VIN Device Supply Input, Connect to Battery or Supply TAB Connect to GND on the PCB, for CAT4004B only. Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Value Unit 6 V VIN + 0.7 V Storage Temperature Range −65 to +150 °C Junction Temperature Range −40 to +125 °C 300 °C VIN, LEDx Voltage EN/DIM Voltage Lead Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 3. RECOMMENDED OPERATING CONDITIONS Parameter Value Unit VIN 2.4 to 5.5 V Ambient Temperature Range −40 to +85 °C 0 to 25 mA LED Current Range 4. Typical application circuit with external components is shown on page 1. http://onsemi.com 3 CAT4003B, CAT4004B Table 4. ELECTRICAL OPERATING CHARACTERISTICS (over recommended operating conditions unless specified otherwise) (VIN = 4.0 V, EN = High, TAMB = 25°C) (Note 6) Conditions Symbol Min Typ Max Units Quiescent Current ILED = 25 mA/channel IQ 0.5 0.7 1.5 mA Shutdown Current VEN = 0 V IQSHDN 1 mA Parameter Full Scale LED Current (Average) (Note 5) LED Channel Matching Dropout Voltage ILED−FULL 24 25 26 mA I LED * I LEDAVG I LEDAVG ILED−DEV −5 ±1 +5 % ILED = 20 mA ILED = 1 mA VDOUT EN/DIM Pin − Internal pull−down resistor − Logic High Level − Logic Low Level REN/DIM VHI VLO 75 45 mV 200 kW V V 1.3 0.4 Thermal Shutdown TSD 150 °C Thermal Hysteresis THYS 20 °C Undervoltage lockout (UVLO) threshold VUVLO 2.0 V 5. For the CAT4003B, ILEDAVG = (ILED,CH1 + ILED,CH2 + ILED,CH3) / 3 6. The Min/Max limits apply across the −40°C to +85°C ambient temperature range and are assured by design, characterization and correlation with statistical analysis. Table 5. RECOMMENDED EN/DIM TIMING (For 3 V ≤ VIN ≤ 5.5 V, over full ambient temperature range −40°C to +85°C.) (Note 7) Parameter Conditions Symbol Min TSETUP 10 EN/DIM program low time TLO 0.2 EN/DIM program high time THI 0.2 Power−up Setup Time LED current settling time Typ TLED EN/DIM low time to shutdown Max ms 500 2 ms ms 10 TPWRDWN Units 3 ms 5 ms 7. The Min/Max limits apply across the −40°C to +85°C ambient temperature range and are assured by design, characterization and correlation with statistical analysis. THI EN/DIM TSETUP TLED 100% LED Current TPWRDWN TLO 100% 97% 94% 32 Levels Shutdown 3% 0% Shutdown Figure 1. CAT400XB EN/DIM Dimming Timing Diagram LED Current Setting consecutive rising edge on the EN/DIM decreases the LED current by one step until it goes to zero, as shown on Figure 1. On the CAT400XB, the full scale LED current is internally set to 25 mA (no external resistor). When the EN/DIM is first enabled, the CAT400XB sets the LED channel current to the full scale current. Each http://onsemi.com 4 CAT4003B, CAT4004B TYPICAL CHARACTERISTICS (CAT4003B, VIN = 4 V, VF = 3.3 V, IOUT = 75 mA (3 LEDs at 25 mA), CIN = 1 μF, TAMB = 25°C unless otherwise specified.) 1.4 −40°C 1.2 QUIESCENT CURRENT [mA] ENABLE HIGH THRESHOLD [V] 1.4 25°C 1.0 0.8 0.6 80°C 0.4 1.2 1.0 0.8 0.6 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 2.5 3.0 1.0 10 0.8 8 0.6 0.4 0.2 0.0 −0.2 −0.4 −0.6 3.5 4.0 4.5 4.5 5.0 5.5 Figure 3. Quiescent Current vs. Input Voltage (full load) LED CURRENT CHANGE [%] LED CURRENT CHANGE [%] Figure 2. EN High Threshold vs. Input Voltage 2.5 3.0 4.0 INPUT VOLTAGE [V] INPUT VOLTAGE [V] −0.8 −1.0 3.5 5.0 5.5 6 4 2 0 −2 −4 −6 −8 −10 −40 INPUT VOLTAGE [V] 0 40 80 120 TEMPERATURE [°C] Figure 4. LED Current Change vs. Input Voltage Figure 5. LED Current Change vs. Temperature http://onsemi.com 5 CAT4003B, CAT4004B TYPICAL CHARACTERISTICS (CAT4003B, VIN = 4 V, VF = 3.3 V, IOUT = 75 mA (3 LEDs at 25 mA), CIN = 1 μF, TAMB = 25°C unless otherwise specified.) 30 100 25mA 90 20 EFFICIENCY [%] LED CURRENT [mA] 25 15 10 5 0 0.8mA 0 50 100 150 200 250 80 70 60 50 300 LED PIN VOLTAGE [mV] 3.0 3.5 4.0 4.5 5.0 INPUT VOLTAGE [V] Figure 6. Dropout Characteristics Figure 7. Efficiency vs. Input Voltage Figure 8. Power Up Waveform Figure 9. Power Down Waveform Figure 10. Line Transient Waveform Figure 11. Dimming Levels http://onsemi.com 6 CAT4003B, CAT4004B Pin Functions into “zero current” shutdown mode, the EN/DIM pin must be held low for 3 ms typical LED1 to LED4 provide the internal regulated current for each of the LED cathodes. The pins enter a high impedance zero current state whenever the device is placed in shutdown mode. GND is the ground reference for the device. The pin must be connected to the ground plane on the PCB. TAB (CAT4004B only) is the exposed pad underneath the package. For best thermal performance, the tab should be soldered to the PCB and connected to the ground plane. VIN is the supply pin for the charge pump. A small 1 mF ceramic bypass capacitor is required between the VIN pin and ground near the device. The operating input voltage range is from 2.4 V to 5.5 V. Whenever the input supply falls below the under−voltage threshold (2.0 V), all the LED channels are disabled and the device enters shutdown mode. EN/DIM is the enable and one wire dimming input for all LED channels. Levels of logic high and logic low are set at 1.3 V and 0.4 V respectively. When EN/DIM is initially taken high, the CAT400XB becomes enabled and all LED currents are set to the full scale 25 mA. To place the device LED4 LED3 Undervoltage Lockout VIN LED2 LED1 VIN Reference Voltage Current Setting DAC EN/DIM Serial Interface 4 Current Sink Regulators Register 200 kΩ GND Figure 12. CAT4004B Functional Block Diagram Basic Operation The full scale current is calculated from the above formula with n equal to zero. The EN/DIM pin has two primary functions. One function enables and disables the device. The other function is LED current dimming with 32 different levels by pulsing the input signal, as shown on Figure 1. On each successive pulse rising edge, the LED current is decreased by about 3.2% (1/31st of the full scale value). After 30 pulses, the LED current is 3.2% of the full scale current. On the 31st pulse, the current drops to zero, and then goes back to full scale on the following pulse. Initially once the EN/DIM input is first pulled high, it must remain high for at least TSETUP delay (10 ms minimum) to allow the LED driver to complete its power−up. After this delay, EN/DIM can be pulsed in order to set the LED current to the desired level. Each pulse width should be between 1 ms and 500 ms. Pulses faster than the minimum TLO may be ignored and filtered by the device. Pulses longer than the maximum TLO may shutdown the device. By pulsing the EN/DIM signal at a high frequency, the LED current can quickly be set to zero or to any other level. The CAT400XB uses tightly matched current sinks to accurately regulate LED current in each channel. There are 32 different settings for LED brightness that can be programmed through the EN/DIM pin. Tight current regulation for all channels is possible over a wide range of input and LED voltages due to independent current sensing circuitry on each channel. Each LED channel needs a minimum of 75 mV headroom to sink a constant regulated current of 20 mA. If the input supply falls below 2.0 V, the under−voltage lockout circuit disables all LED channels and resets the circuit to default values. Any unused LED channels should be left open. CAT400XB LED Current Selection After power−up and once enabled, the LED current is set initially to the full scale currrent of 25 mA. The number of pulses (n) on the EN/DIM input does decrease the current value as follows: LED current [mA] + 25 ǒ3131* nǓ http://onsemi.com 7 CAT4003B, CAT4004B The LED driver enters a “zero current” shutdown mode if EN/DIM is held low for longer than 5 ms. The dimming level is set by the number of pulses on the EN/DIM after the power−up, as shown in Table 6. Full Scale Current in % Dimming Pulses [n] 55 14 52 15 48 16 45 17 Dimming Pulses [n] 42 18 100 0 39 19 97 1 35 20 94 2 32 21 90 3 29 22 87 4 26 23 84 5 23 24 81 6 19 25 77 7 16 26 74 8 13 27 71 9 10 28 68 10 6 29 65 11 3 30 61 12 0 31 13 100 32 Table 6. DIMMING LEVELS Full Scale Current in % 58 http://onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE V 1 SCALE 2:1 D H ÉÉ ÉÉ 6 E1 1 NOTE 5 5 2 L2 4 GAUGE PLANE E 3 L b SEATING PLANE C DETAIL Z e DIM A A1 b c D E E1 e L L2 M c A 0.05 M DATE 12 JUN 2012 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. A1 DETAIL Z MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 10° − STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 2: PIN 1. EMITTER 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. BASE 2 6. COLLECTOR 2 STYLE 3: PIN 1. ENABLE 2. N/C 3. R BOOST 4. Vz 5. V in 6. V out STYLE 4: PIN 1. N/C 2. V in 3. NOT USED 4. GROUND 5. ENABLE 6. LOAD STYLE 5: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 7: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. N/C 5. COLLECTOR 6. EMITTER STYLE 8: PIN 1. Vbus 2. D(in) 3. D(in)+ 4. D(out)+ 5. D(out) 6. GND STYLE 9: PIN 1. LOW VOLTAGE GATE 2. DRAIN 3. SOURCE 4. DRAIN 5. DRAIN 6. HIGH VOLTAGE GATE STYLE 10: PIN 1. D(OUT)+ 2. GND 3. D(OUT)− 4. D(IN)− 5. VBUS 6. D(IN)+ STYLE 11: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1/GATE 2 STYLE 12: PIN 1. I/O 2. GROUND 3. I/O 4. I/O 5. VCC 6. I/O STYLE 13: PIN 1. GATE 1 2. SOURCE 2 3. GATE 2 4. DRAIN 2 5. SOURCE 1 6. DRAIN 1 STYLE 14: PIN 1. ANODE 2. SOURCE 3. GATE 4. CATHODE/DRAIN 5. CATHODE/DRAIN 6. CATHODE/DRAIN STYLE 15: PIN 1. ANODE 2. SOURCE 3. GATE 4. DRAIN 5. N/C 6. CATHODE STYLE 16: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 17: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR GENERIC MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 XXXAYWG G 1 6X 3.20 XXX A Y W G 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB14888C TSOP−6 1 IC 0.95 XXX MG G = Specific Device Code =Assembly Location = Year = Work Week = Pb−Free Package STANDARD XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88 (SC−70 6 Lead), 1.25x2 CASE 419AD ISSUE A DATE 07 JUL 2010 1 D e e E1 E SYMBOL MIN A 0.80 MAX 1.10 A1 0.00 0.10 A2 0.80 1.00 b 0.15 0.30 0.18 c 0.10 D 1.80 2.00 2.20 E 1.80 2.10 2.40 E1 1.15 1.25 1.35 0.65 BSC e L 0.26 L1 0.36 0.46 0.42 REF 0.15 BSC L2 TOP VIEW NOM θ 0º 8º θ1 4º 10º q1 A2 A q b q1 L L1 A1 SIDE VIEW c L2 END VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC MO-203. DOCUMENT NUMBER: DESCRIPTION: 98AON34266E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SC−88 (SC−70 6 LEAD), 1.25X2 PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOT−23, 6 LEAD CASE 419AF−01 ISSUE O DATE 19 DEC 2008 SYMBOL D MIN NOM A e E1 MAX 1.00 A1 0.01 0.05 0.10 A2 0.80 0.87 0.90 b 0.30 c 0.12 E 0.45 0.15 D 2.90 BSC E 2.80 BSC E1 1.60 BSC e 0.95 TYP L 0.30 L1 0.40 0.20 0.50 0.60 REF L2 0.25 BSC 0º θ 8º TOP VIEW A2 A b q L A1 c L2 L1 SIDE VIEW END VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC MO-193. DOCUMENT NUMBER: DESCRIPTION: 98AON34406E TSOT−23, 6 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN8, 2x2 CASE 517AW ISSUE A 1 SCALE 2:1 ÇÇ ÇÇ E DETAIL A ALTERNATE CONSTRUCTIONS 0.10 C 2X L L L1 PIN ONE REFERENCE 2X B A D DATE 13 NOV 2015 0.10 C TOP VIEW DETAIL B A 0.10 C A3 A1 0.08 C A1 SIDE VIEW NOTE 4 C D2 DETAIL A 1 8X 4 SEATING PLANE 5 e e/2 A3 ALTERNATE CONSTRUCTION MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.18 0.30 2.00 BSC 1.50 1.70 2.00 BSC 0.80 1.00 0.50 BSC 0.20 0.45 −−− 0.15 GENERIC MARKING DIAGRAM* 8X 1 b 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* 1.73 PACKAGE OUTLINE DETAIL B DIM A A1 A3 b D D2 E E2 e L L1 L E2 8 ÇÇ ÇÇ ÉÉ MOLD CMPD EXPOSED Cu NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINALS AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. FOR DEVICE OPN CONTAINING W OPTION, DETAIL B ALTERNATE CONSTRUCTION IS NOT APPLICABLE. 8X 0.50 XX MG G XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.30 1.00 1 8X 0.50 PITCH 0.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON34462E UDFN8, 2X2 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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CAT4004BHU2-GT3 价格&库存

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