FDC5614P_D87Z

DATA SHEET www.onsemi.com MOSFET – P-Channel, POWERTRENCH), Logic Level VDSS RDS(on) MAX ID MAX 0.105  @ −10 V −60 V −3 A 0.135  @ −4.5 V 60 V S D FDC5614P D Description D This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. D G TSOT23 6−Lead (SUPERSOTt−6) CASE 419BL Features • −3 A, −60 V MARKING DIAGRAM RDS(on) = 0.105  @ VGS = −10 V ♦ RDS(on) = 0.135  @ VGS = −4.5 V Fast Switching Speed High Performance Trench Technology for Extremely Low RDS(on) This is a Pb−Free and Halide Free Device ♦ • • • 564 MG G 1 564 = Specific Device Code M = Date Code G = Pb−Free Package Applications • DC−DC Converters • Load Switch • Power Management (Note: Microdot may be in either location) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit VDSS Drain−Source Voltage −60 V VGSS Gate−Source Voltage ±20 V −3 −20 A 1.6 0.8 W −55 to 150 °C ID Drain Current − Continuous − Pulsed PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG (Note 1a) Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol RJA Thermal Resistance, Junction−to−Ambient (Note 1a) RJC Thermal Resistance, Junction−to−Case (Note 1) © Semiconductor Components Industries, LLC, 2022 July, 2022 − Rev. 4 Value Unit 78 °C/W 30 °C/W 1 PIN ASSIGNMENT 1 6 2 5 3 4 ORDERING INFORMATION Device FDC5614P Package Shipping† TSOT−23−6 (SUPERSOTt−6) (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: FDC5614P/D FDC5614P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit −60 − − V OFF CHARACTERISTICS BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = −250 A BV DSS T J Breakdown Voltage Temperature Coefficient ID = −250 μA, Referenced to 25°C − −49 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = −48 V, VGS = 0 V − − −1 A IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V − − 100 nA IGSSR Gate–Body Leakage, Reverse VGS = −20 V, VDS = 0 V − − −100 Gate Threshold Voltage VDS = VGS, ID = −250 A −1 −1.6 −3 V Gate Threshold Voltage Temperature Coefficient ID = −250 A, Referenced to 25°C − 4 − mV/°C Static Drain–Source On–Resistance VGS = −10 V, ID = −3 A − 82 105 m VGS = −4.5 V, ID = −2.7 A − 105 135 VGS = −10 V, ID = −3 A, TJ = 125°C − 130 190 −20 − − A ON CHARACTERISTICS (Note 2) VGS(th) V GS(th) T J RDS(on) ID(on) gFS On–State Drain Current VGS = −10 V, VDS = −5 V Forward Transconductance VDS = −5 V, ID = −3 A − 8 − S VDS = −30 V, VGS = 0 V, f = 1.0 MHz − 759 − pF − 90 − − 39 − − 7 14 − 10 20 − 19 34 − 12 22 − 15 24 − 2.5 − − 3.0 − Maximum Continuos–Source Diode Forward Current − − −1.3 A Drain–Source Diode Forward Voltage − −0.8 −1.2 V DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = −30 V, ID = −1 A, VGS = −10 V, RGEN = 6  VDS = −30 V, ID = −3.0 A, VGS = −10 V ns nC DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD VGS = 0 V, IS = −1.3 A (Note 2) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. RJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user’s board design. a) 78°C/W when mounted on a 1in2 pad of 2oz copper on FR−4 board. b) 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0% www.onsemi.com 2 FDC5614P TYPICAL CHARACTERISTICS VGS = −10 V 12 ID, Drain Current (A) 1.8 −6.0 V −5.0 V −4.5 V −4.0 V RDS(on),Normalized Drain−Source on−Resistance 15 −3.5 V 9 6 −3.0 V 3 0 −2.5 V 0 1 2 3 4 −4.0 V 1.6 −4.5 V 1.4 −5.0 V −6.0 V 1.2 −7.0 V 1.0 −10.0 V −8.0 V 0.8 5 VGS = −3.5 V 0 2 4 Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain Current and Gate Voltage 1.8 0.4 ID = −1.5 A RDS(on), On−Resistance (W) RDS(on), Normalized Drain−Source on−Resistance ID = −3.0 A VGS = −10 V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 −50 0.3 0.2 TA = 125°C 0.1 TA = 25°C 0 −25 0 25 50 75 100 125 150 2 4 Figure 3. On−Resistance Variation with Temperature VDS = −5 V 100 TA = −55°C 8 10 Figure 4. On−Resistance Variation with Gate−to−Source Voltage 25°C IS, Reverse Drain Current (A) 15 6 VGS , Gate to Source Voltage (V) TJ, Junction Temperature (5C) 12 ID, Drain Current (A) 10 8 ID, Drain Current (A) VDS , Drain−Source Voltage (V) 125°C 9 6 3 0 6 VGS = 0 V 10 1 0.1 TA = 125°C 0.01 25°C −55°C 1 2 3 4 0.001 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage (V) VGS, Gate to Source Voltage (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 3 FDC5614P TYPICAL CHARACTERISTICS (continued) Capacitance (pF) −20 V 6 −30 V 4 2 30 10 f = 1 Mhz VGS = 0 V 1000 8 0 ID, Drain Current (A) 1200 VDS = −10 V ID = −3.0 A CISS 800 600 400 COSS 200 0 4 8 12 CRSS 0 10 40 Figure 8. Capacitance Characteristics 1000 100 s 1 ms 10 ms Single Pulse TJ = Max Rated RJA = 156°C/W TA = 25°C 100 ms 1s DC 0.1 60 50 Figure 7. Gate Charge Characteristics 0.01 0.01 1 10 100 300 Single Pulse RJA = 156°C/W TA = 25°C 100 10 1 0.1 10−4 10−3 VDS, Drain to Source Voltage (V) 10−2 10−1 1 10 100 1000 t, Pulse Width (s) Figure 11. Single Pulse Maximum Power Dissipation Figure 9. Maximum Safe Opening Area ZqJA, Normalized Thermal Impedance 30 VDS, Drain to Source Voltage (V) 1 2 1 20 Qg, Gate Charge (nC) This Area is Limited by RDS(on) 0.1 0 16 P(pk), Peak Transient Power (W) VGS, Gate−Source Voltage (V) 10 Duty Cycle−Descending Order D = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 0.01 t2 RJA(t)= r(t) x RJA RJA = 156 °C/W Peak TJ = PDM x ZJA(t) + TA Duty Cycle, D = t1 / t2 0.01 0.001 10−4 t1 Single Pulse 10−3 10−2 10−1 1 10 t, Regular Pulse Duration (s) Figure 10. Transient Thermal Response Curve NOTE: Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 FDC5614P POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOT23 6−Lead CASE 419BL ISSUE A 1 SCALE 2:1 DATE 31 AUG 2020 GENERIC MARKING DIAGRAM* XXX MG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON83292G TSOT23 6−Lead Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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