FDC5614P

FDC5614P www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -60 RDS(on) ( Ω) Typ. I D (A) d 0.050 at VGS = -10 V -6.5 0.060 at VGS = -4.5 V -5.1 • TrenchFET® power MOSFET Qg (TYP.) • 100 % Rg and UIS tested 10.1 nC APPLICATIONS • Load switches • DC/DC converter TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G 3 mm (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) SYMBOL LIMIT Drain-Source Voltage PARAMETER VDS -60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C -6.5 TC = 70 °C -4.5 ID TA = 25 °C Continuous Source-Drain Diode Current -3.1a,b Avalanche Current Single-Pulse Avalanche Energy IDM TC = 25 °C -20 L = 0.1 mH -1.7 a,b IAS -15 EAS 11.25 TC = 25 °C Maximum Power Dissipation mJ 4.2 TC = 70 °C 2.7 PD TA = 25 °C 2 a,b W 1.3 a,b TA = 70 °C Operating Junction and Storage Temperature Range A -3.5 IS TA = 25 °C V -3.8a,b TA = 70 °C Pulsed Drain Current (t = 100 μs) UNIT TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a,c Maximum Junction-to-Foot Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 110 °C/W. d. Based on TC = 25 °C. E-mail：China@VBsemi TEL:86-755-83251052 SYMBOL TYPICAL MAXIMUM t ≤ 10 s RthJA 40 62.5 Steady State RthJF 25 30 UNIT °C/W FDC5614P www.VBsemi.tw SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. VDS VGS = 0 V, ID = -250 μA TYP. MAX. UNIT -60 - - V - -6.7 - - 4.3 - Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient ID = -250 μA VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA - -0.5 - IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VDS = -60 V, VGS = 0 V - - -1 VDS = -60 V, VGS = 0 V, TJ = 55 °C - - -5 VDS ≥ -10 V, VGS = -10 V -30 - - VGS = -10 V, ID = -3.5 A - 0.050 - VGS = -4.5 V, ID = -2.8 A - 0.060 - VDS = -30 V, ID = -3.5 A - 11 - - 832 - VDS = -30 V, VGS = 0 V, f = 1 MHz - 88 - - 63 - Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a RDS(on) gfs mV/°C -2V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS = -30 V, VGS = -10 V, ID = -3.5 A - 20 30 - 10.1 15.2 VDS = -30 V, VGS = -4.5 V, ID = -3.5 A - 3.3 - - 3.9 - f = 1 MHz 1.8 9 18 - 8 16 VDD = -30 V, RL = 10.7 Ω ID ≅ -2.8 A, VGEN = -10 V, Rg = 1 Ω - 6 12 - 35 53 tf - 16 24 td(on) - 40 60 - 28 42 - 31 47 - 15 23 td(on) tr td(off) tr td(off) VDD = -30 V, RL = 10.7 Ω ID ≅ -2.8 A, VGEN = -4.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = -2.8 A, VGS = 0 V IF = -2.8 A, dI/dt = 100 A/μs, TJ = 25 °C - - -3.5 - - -20 - -0.85 -1.2 V - 32 48 ns - 45 68 nC - 24 - - 8 - A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 FDC5614P www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 15 VGS = 10V thru 4.5V VGS = 4 V ID - Drain Current (A) ID - Drain Current (A) 1.5 10 5 1 TC = 25 °C TC = 125 °C 0.5 VGS = 3 V TC = - 55 °C 0 0 0.6 1.2 1.8 2.4 3 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.2 1260 0.15 945 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0 0.1 VGS = 4.5 V 0.05 Ciss 630 315 VGS = 10 V Coss Crss 0 0 0 5 10 15 20 0 12 18 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 2 10 VDS = 15 V VGS = 10 V, 3.5A RDS(on) - On-Resistance (Normalized) ID = 3.5 A VGS - Gate-to-Source Voltage (V) 6 ID - Drain Current (A) 8 VDS = 30 V 6 4 VDS = 48 V 2 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge E-mail：China@VBsemi TEL:86-755-83251052 20 25 1.65 1.3 VGS = 4.5 V, 2.8 A 0.95 0.6 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 150 FDC5614P www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.20 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 3.5 A TJ = 150 °C 10 TJ = 25 °C 1 TJ = 125 °C 0.10 TJ = 25 °C 0.05 0 0.1 0.0 0.3 0.6 0.9 1.2 2 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 ID = 250 μA 40 1.75 30 Power (W) 1.95 1.55 1.35 1.15 - 50 4 VSD - Source-to-Drain Voltage (V) 2.15 VGS(th) (V) 0.15 20 10 - 25 0 25 50 75 100 125 0 10- 3 150 10- 2 10- 1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by IDM ID - Drain Current (A) 10 Limited by RDS(on)* 100 μs 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C 10 s, 1 s BVDSS Limited DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area E-mail：China@VBsemi TEL:86-755-83251052 600 FDC5614P www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6 ID - Drain Current (A) 4.5 3 1.5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 5 1.5 4 1.2 3 0.9 Power (W) Power (W) Current Derating* 2 0.6 0.3 1 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Foot 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 FDC5614P www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 1 10 FDC5614P www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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