FDMC6679AZ

DATA SHEET www.onsemi.com MOSFET – P-Channel, POWERTRENCH) Pin 1 S SS G -30 V, -20 A, 10 mW D D DD FDMC6679AZ WDFN8 3.3x3.3, 0.65P CASE 511DH General Description The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. MARKING DIAGRAM FDMC 6679AZ ALYW Features • • • • • • • Bottom Top Max rDS(on) = 10 mW at VGS = −10 V, ID = −11.5 A Max rDS(on) = 18 mW at VGS = −4.5 V, ID = −8.5 A HBM ESD Protection Level of 8 kV Typical (Note 3) Extended VGSS range (−25 V) for Battery Applications High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability This Device is Pb−Free and Halide Free FDMC6679AZ = Specific Device Code A = Assembly Location L = Wafer Lot Number YW = Assembly Start Week Applications PIN ASSIGNMENT • Load Switch in Notebook and Server • Notebook Battery Pack Power Management D 5 4 G D 6 3 S D 7 2 S D 8 1 S ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2009 August, 2022 − Rev. 5 1 Publication Order Number: FDMC6679AZ/D FDMC6679AZ MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Unit VDS Drain to Source Voltage −30 V VGS Gate to Source Voltage ±25 V A ID Parameter Drain Current Continuous TC = 25°C −20 Continuous (Note 1a) TA = 25°C −11.5 Pulsed PD TJ, TSTG −32 W Power Dissipation TC = 25°C 41 Power Dissipation (Note 1a) TA = 25°C 2.3 Operating and Storage Junction Temperature Range −55 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit _C/W RqJC Thermal Resistance, Junction to Case 3.0 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 53 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. b. 125°C/W when mounted on a minimum pad of 2 oz copper a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 2 FDMC6679AZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = −250 mA, VGS = 0 V DBV DSS Breakdown Voltage Temperature Coefficient ID = −250 mA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = −24 V, VGS = 0 V DT J IDSS IGSS Gate to Source Leakage Current −30 V 29 mV/°C −1 mA VDS = −24 V, VGS = 0 V, TJ = 125°C −100 VGS = ±25 V, VDS = 0 V ±10 mA −3 V ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = −250 mA DV GS(th) Gate to Source Threshold Voltage Temperature Coefficient ID = −250 mA, Referenced to 25°C –7 Static Drain to Source On Resistance VGS = −10 V, ID = −11.5 A 8.6 10 VGS = −4.5 V, ID = −8.5 A 12 18 VGS = −10 V, ID = −11.5 A, TJ = 125°C 12 15 VDS = −5 V, ID = −11.5 A 46 DT J rDS(on) gFS Forward Transconductance −1.0 −1.8 mV/°C mW S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Crss VDS = −15 V, VGS = 0 V, f = 1 MHz 2985 3970 pF Output Capacitance 570 755 pF Reverse Transfer Capacitance 500 750 pF 12 21 ns SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg Turn−On Delay Time Rise Time VDD = −15 V, ID = −11.5 A, VGS = −10 V, RGEN = 6 W 14 25 ns Turn−Off Delay Time 63 100 ns Fall Time 46 73 ns VGS = 0 V to −10 V, VDD = −15 V, ID = −11.5 A 65 91 nC VGS = 0 V to −5 V, VDD = −15 V, ID = −11.5 A 37 52 nC VDD = −15 V, ID = −11.5 A 8.7 nC 17 nC Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = −11.5 A (Note 2) 0.83 1.30 V VGS = 0 V, IS = −1.6 A (Note 2) 0.71 1.20 trr Reverse Recovery Time IF = −11.5 A, di /dt = 100 A/ms 31 49 ns Qrr Reverse Recovery Charge 16 28 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FDMC6679AZ TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 4 VGS = −10 V VGS = −6 V VGS = −4.5 V 24 Normalized Drain to Source On−Resistance −ID, Drain Current (A) 32 VGS = −4 V VGS = −3.5 V 16 VGS = −3 V 8 Pulse Duration = 80 ms Duty Cycle = 0.5% Max 0 2 1 0 VGS = −3.0 V 3 VGS = −3.5 V 2 VGS = −6 V 0 rDS(on), Drain to Source On−Resistance (mW) Normalized Drain to Source On−Resistance 1.2 1.0 0.8 −50 −25 0 25 50 100 75 125 150 50 40 30 20 TJ = 125°C 10 TJ = 25°C 0 −IS, Reverse Drain Current (A) −ID, Drain Current (A) 40 VDS = −5 V 16 8 0 TJ = −55°C TJ = 150°C 1 2 3 8 6 10 Figure 4. On−Resistance vs. Gate to Source Voltage Pulse Duration = 80 ms Duty Cycle = 0.5% Max TJ = 25°C 4 2 −VGS, Gate to Source Voltage (V) Figure 3. Normalized On Resistance vs. Junction Temperature 24 32 Pulse Duration = 80 ms Duty Cycle = 0.5% Max ID = −11.5 A TJ, Junction Temperature (5C) 32 24 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage ID = −11.5 A VGS = −10 V 0.6 −75 VGS = −10 V −ID, Drain Current (A) Figure 1. On Region Characteristics 1.4 16 8 −VDS, Drain to Source Voltage (V) 1.6 VGS = −4.5 V VGS = −4 V 1 0 3 Pulse Duration = 80 ms Duty Cycle = 0.5% Max VGS = 0 V 10 1 0.1 TJ = −55°C 0.01 0.001 0.0 4 TJ = 25°C TJ = 150°C −VGS, Gate to Source Voltage (V) 0.2 0.4 0.6 0.8 1.0 −VSD, Body Diode Forward Voltage (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 1.2 FDMC6679AZ TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) 10000 ID = −11.5 A f = 1 MHz VGS = 0 V Ciss 8 Capacitance (pF) −VGS, Gate to Source Voltage (V) 10 VDD = −15 V 6 VDD = −10 V VDD = −20 V 4 1000 Coss Crss 2 0 0 100 20 10 30 40 50 60 70 0.1 1 30 −VDS, Drain to Source Voltage (V) Qg, Gate Charge (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage 50 −IAS, Avalanche Current (A) 60 −ID, Drain Current (A) 50 TJ = 25°C TJ = 100°C TJ = 125°C 1 0.001 0.01 40 VGS = −10 V 30 VGS = −4.5 V 20 10 1 0.1 10 0 100 Limited by Package RqJC = 3.0°C/W 50 25 tAV, Time in Avalanche (ms) 1 ms 10 ms This Area is Limited by rDS(on) 0.01 0.01 1s Single Pulse TJ = Max Rated RqJA = 125°C/W TA = 25°C 0.1 10 s −Ig, 0.1 100 ms Gate Leakage Current (A) 10−2 1 DC 1 10 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 10 75 TC, Case Temperature (5C) Figure 9. Unclamped Inductive Switching Capability −ID, Drain Current (A) 10 10−3 10−4 10−5 TJ = 125°C 10−6 TJ = 25°C 10−7 10−8 100 VDS = 0 V 0 5 10 15 20 25 −VGS, Gate to Source Voltage (V) −VDS, Drain to Source Voltage (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Igss vs. Vgss www.onsemi.com 5 30 35 FDMC6679AZ TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) P(PK), Peak Transient Power (W) 1000 VGS = −10 V 100 10 1 Single pulse RqJA = 125°C/W TA = 25°C 0.3 10−3 10−2 10−1 1 100 10 1000 t, Pulse Width (s) Normalized Thermal Impedance, ZqJA Figure 13. Single Pulse Maximum Power Dissipation 2 1 0.1 Duty Cycle − Descending Order D = 0.5 0.2 0.1 PDM 0.05 0.02 0.01 t1 t2 0.01 0.001 10−3 Notes: Duty Factor: D = t1 / t2 Peak TJ = PDM x ZqJA x RqJA + TA Single pulse RqJA = 125°C/W 10−2 10−1 1 10 100 1000 t, Rectangular Pulse Duration (s) Figure 14. Junction−to−Ambient Transient Thermal Response Curve ORDERING INFORMATION Device FDMC6679AZ Device Marking Package Type Shipping† FDMC6679AZ WDFN8 3.3x3.3, 0.65P, Case 511DH (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O 0.05 C 3.30 DATE 31 JUL 2016 B A 8 2X (3.40) 2.37 5 0.45(4X) 2.15 3.30 (1.70) (0.40) KEEP OUT AREA (0.65) 0.70(4X) PIN#1 IDENT 0.10 C 0.05 C TOP VIEW 0.65 2X 1 4 1.95 0.75±0.05 0.42(8X) RECOMMENDED LAND PATTERN 0.15±0.05 0.08 C 0.025±0.025 NOTES: C SIDE VIEW SEATING PLANE A. DOES NOT CONFORM TO JEDEC REGISTRATION MO−229 B. DIMENSIONS ARE IN MILLIMETERS. 3.30±0.05 2.27±0.05 PIN #1 IDENT 1 (0.79) C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 2009. (0.50)4X D. LAND PATTERN RECOMMENDATION IS EXISTING INDUSTRY LAND PATTERN. 4 0.50±0.05 (4X) (0.35) (1.15) 3.30±0.05 R0.15 2.00±0.05 0.30±0.05 (3X) 8 5 0.65 1.95 0.35±0.05 (8X) 0.10 C A B 0.05 C BOTTOM VIEW DOCUMENT NUMBER: DESCRIPTION: 98AON13625G WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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