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FDS8690
N-Channel PowerTrench® MOSFET
30V, 14A, 7.6mΩ
Features
General Description
Max rDS(on) = 7.6mΩ, VGS = 10V, ID = 14A
This N-Channel MOSFET has been designed specifically to
Max rDS(on) = 11.4mΩ, VGS = 4.5V, ID = 11.5A
improve the overall efficiency of DC/DC converters using
High performance trench technology for extremely low
rDS(on) and fast switching
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
Very low gate charge
rDS(on) and fast switching speed.
High power and current handling capability
Notebook CPU power supply
100% RG tested
Synchronous rectifier
RoHS Compliant
A
REE I
DF
M ENTATIO
LE
N
MP
LE
Applications
Absolute Maximum Ratings TA = 25°C unless otherwise Noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
(Note 1a)
-Pulsed
Ratings
30
Units
V
±20
V
14
EAS
Single Pulse Avalanche Energy
(Note 3)
210
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
1.0
TJ, TSTG
A
100
Operating and Storage Temperature
mJ
W
-55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
RθJC
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Device Marking
FDS8690
Device
FDS8690
©2006 Fairchild Semiconductor Corporation
FDS8690 Rev. B
Reel Size
13”
1
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDS8690 N-Channel PowerTrench® MOSFET
January 2006
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C
30
V
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
3
V
34.3
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C
VGS = 10V, ID = 14A
6.3
7.6
Drain to Source On Resistance
VGS = 4.5V, ID = 11.5A
8.6
11.4
VGS = 10V, ID = 14A,
TJ = 125°C
9.0
10.9
1260
1680
pF
535
715
pF
80
120
pF
rDS(ON)
1
1.6
- 4.5
mV/°C
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
Ω
f = 1MHz
1.1
VDS = 15V, ID = 1A,
VGS = 10V, RGS = 6Ω
8.0
16
ns
1.8
10
ns
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
26
42
ns
tf
Fall Time
19
35
ns
18.8
27
nC
10
14
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain Charge
VDS = 15V, VGS = 10V
ID = 14A
VDS = 15V, VGS = 5V
ID = 14A
nC
3.5
nC
2.9
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.1A
1.2
V
trr
Reverse Recovery Time
IF = 14A, di/dt = 100A/µs
0.7
45
ns
Qrr
Reverse Recovery Charge
IF = 14A, di/dt = 100A/µs
33
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
b)105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when
mounted on a
minimun pad
2. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
3. Starting TJ = 25oC, L = 3mH, IAS = 11.8A , VDD = 24V, VGS = 10V.
2
FDS8690 Rev. B
www.fairchildsemi.com
FDS8690 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
VGS = 4V
VGS = 3.5V
ID, DRAIN CURRENT (A)
80
VGS = 4.5V
VGS = 10V
60
VGS = 3V
40
20
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 3.0V
2.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 3.5V
2.0
VGS = 4V
1.6
1.2
0.8
VGS = 10V
0
20
40
60
ID, DRAIN CURRENT(A)
VGS = 4.5V
80
100
Figure 2. Normal On-Resistance vs Drain Current
and Gate Voltage
60
1.6
ID = 14A
VGS = 10V
1.4
ID = 50A
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
2.8
4
Figure 1. On Region Characteristics
1.2
1.0
0.8
0.6
-80
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE (oC)
50
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
30
20
TJ = 150oC
10
0
Figure 3. Normalized On Resistance vs Junction
Temperature
TJ = 25oC
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to Source
Voltage
1000
IS, REVERSE DRAIN CURRENT (A)
100
ID, DRAIN CURRENT (A)
3.2
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
80
60
TJ =
40
150oC
TJ = 25oC
20
TJ = -55oC
0
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4.0
Figure 5. Transfer Characteristics
10
TJ = 150oC
1
TJ = 25oC
0.1
TJ = -55oC
0.01
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
3
FDS8690 Rev. B
VGS = 0V
100
www.fairchildsemi.com
FDS8690 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
4000
Ciss
8
6
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 15V
VDD = 10V
4
VDD = 20V
2
0
0
5
10
15
Qg, GATE CHARGE(nC)
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
= 125oC
-1
10
0
1
2
10
10
10
tAV, TIME IN AVALANCHE(ms)
100us
10
1ms
1
10ms
100ms
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
P(PK), PEAK TRANSIENT POWER (W)
VGS = 10V
9
VGS = 4.5V
o
RθJA = 50 C/W
50
75
100
125
TA, AMBIENT TEMPERATURE(oC)
DC
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
10000
6
1s
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
100
Figure 10. Forward Bias Safe Operating Area
15
12
30
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
10us
0.01
0.1
3
10
Figure 9. Unclamped Inductive Switching
Capability
ID, DRAIN CURRENT (A)
f = 1MHz
VGS = 0V
Figure 8. Capacitance vs Drain to Source Voltage
TJ = 25oC
TJ
150
TA = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
1000
CURRENT AS FOLLOWS:
150 – T A
-----------------------125
I = I25
100
10
SINGLE PULSE
1
-5
10
-4
10
-3
10
-2
-1
0
10
10
10
t, PULSE WIDTH (s)
1
10
2
10
3
10
Figure 12. Single Pulse Maximum Power
Dissipation
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
4
FDS8690 Rev. B
Crss
200
100
10
0
25
100
10
0.1
40
3
Coss
20
Figure 7. Gate Charge Characteristics
1
-2
10
1000
www.fairchildsemi.com
FDS8690 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
1E-3
-5
10
t2
SINGLE PULSE
-4
10
-3
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
2
10
3
10
Figure 13. Transient Thermal Response Curve
5
FDS8690 Rev. B
www.fairchildsemi.com
FDS8690 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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Rev. I18
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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