FGL12040WD

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGL12040WD 1200 V, 40 A Field Stop Trench IGBT Features • • • • • • • General Description Maximum Junction Temperature : TJ = 150oC Positive Temperature Co-efficient for Easy Parallel Operating Low Saturation Voltage: VCE(sat) =2.3 V @ IC = 40 A 100% of The Parts Tested for ILM(1) Short Circuit Ruggedness > 5 us @ 150oC High Input Impedance RoHS Compliant Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential. Applications • Only for Welder C G G C TO-264 E E Absolute Maximum Ratings T C Symbol VCES VGES IC = 25°C unless otherwise noted Description Collector to Emitter Voltage Unit 1200 V Gate to Emitter Voltage ±25 V Transient Gate to Emitter Voltage ±30 V Collector Current @ TC = 25oC 80 A Collector Current @ TC = 100oC 40 A ILM (1) Clamped Inductive Load Current ICM (2) Pulsed Collector Current IF Diode Continuous Forward Current Diode Continuous Forward Current @ TC = 25oC @ TC = 25oC @ TC = 100oC IFM(2) Diode Maximum Forward Current SCWT (3) Short Circuit Withstand Time @ TC = 150oC Maximum Power Dissipation @ TC = 25oC PD FGL12040WD Maximum Power Dissipation @ TC = 100oC 100 A 100 A 80 A 40 A 100 A 5 us 391 W 156 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Notes: 1. Vcc = 600 V, VGE = 15 V, IC = 100 A, RG = 23 Ω , Inductive Load 2. Repetitive rating : Pulse width limited by max, junction temperature 3. VCC = 600 V, VGE = 12 V ©2014 Fairchild Semiconductor Corporation FGL12040WD Rev. C1 1 www.fairchildsemi.com FGL12040WD — 1200 V, 40 A Field Stop Trench IGBT December 2014 Symbol Parameter FGL12040WD Unit RJC(IGBT) Thermal Resistance, Junction to Case 0.32 oC/W RJC(Diode) Thermal Resistance, Junction to Case 1.0 oC/W RJA Thermal Resistance, Junction to Ambient 25 oC/W Package Marking and Ordering Information Part Number Top Mark Package Packing Method FGL12040WD FGL12040WD TO-264 Tube Electrical Characteristics of the IGBT Symbol Parameter Reel Size Tape Width - - Quantity 25 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 1200 - - V ∆BVCES / ∆TJ Temperature Coefficient of Breakdown VGE = 0 V, IC = 250 uA Voltage - 1.2 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 40 mA, VCE = VGE 4.8 6.4 8.0 V IC = 40 A, VGE = 15 V TC = 25oC - 2.3 2.9 V IC = 40 A, VGE = 15 V, TC = 150oC - 2.5 - V - 2800 - pF - 105 - pF - 60 - pF 45 - ns On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - tr Rise Time - 70 - ns td(off) Turn-Off Delay Time - 560 - ns - 15 - ns - 4.1 - mJ VCC = 600 V, IC = 40 A, RG = 23 , VGE = 15 V, Inductive Load, TC = 25oC tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 1.0 - mJ Ets Total Switching Loss - 5.1 - mJ td(on) Turn-On Delay Time - 40 - ns tr Rise Time - 65 - ns td(off) Turn-Off Delay Time - 472 - ns tf Fall Time - 51 - ns Eon Turn-On Switching Loss - 6.1 - mJ Eoff Turn-Off Switching Loss - 1.7 - mJ Ets Total Switching Loss - 7.8 - mJ ©2014 Fairchild Semiconductor Corporation FGL12040WD Rev. C1 VCC = 600 V, IC = 40 A, RG = 23 , VGE = 15 V, Inductive Load, TC = 150oC 2 www.fairchildsemi.com FGL12040WD — 1200 V, 40 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 600 V, IC = 40 A, VGE = 15 V Electrical Characteristics of the DIODE Symbol VFM Parameter Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Min. Typ. Max. Unit - 226 - nC - 18 - nC - 155 - nC TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit IF = 40 A, TC = 25oC - 3.6 4.7 V IF = 40 A, TC = 150oC - 3.0 - V - 71 - ns - 6.8 - A VR = 600 V, IF = 40 A, diF/dt = 200 A/us, TC = 25oC Qrr Diode Reverse Recovery Charge - 242 - nC Erec Reverse Recovery Energy - 440 - uJ trr Diode Reverse Recovery Time VR = 600 V, IF = 40A, o Diode Peak Reverse Recovery Current diF/dt = 200 A/us, TC = 150 C - 339 - ns Irr - 14 - A Qrr Diode Reverse Recovery Charge - 2373 - nC ©2014 Fairchild Semiconductor Corporation FGL12040WD Rev. C1 3 www.fairchildsemi.com FGL12040WD — 1200 V, 40 A Field Stop Trench IGBT Electrical Characteristics of the IGBT (Continued) Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE ©2014 Fairchild Semiconductor Corporation FGL12040WD Rev. C1 4 www.fairchildsemi.com FGL12040WD — 1200 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics Figure 9. Turn-on Characteristics vs. Gate Resistance Figure 10. Turn-off Characteristics vs. Gate Resistance Figure 11. Swithcing Loss vs. Gate Resistance Figure 12. Turn-on Characteristics vs. Collector Current ©2014 Fairchild Semiconductor Corporation FGL12040WD Rev. C1 5 www.fairchildsemi.com FGL12040WD — 1200 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics FGL12040WD — 1200 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Swithcing Loss vs. Collector Current Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current ©2014 Fairchild Semiconductor Corporation FGL12040WD Rev. C1 6 www.fairchildsemi.com FGL12040WD — 1200 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Time Figure 20. Stored Charge Figure 21. Transient Thermal Impedance of IGBT PDM t1 t2 Figure 22. Transient Thermal Impedance of Diode PDM t1 ©2014 Fairchild Semiconductor Corporation FGL12040WD Rev. C1 7 t2 www.fairchildsemi.com FGL12040WD — 1200 V, 40 A Field Stop Trench IGBT Mechanical Dimensions Figure 23. TO264, Molded, 3-Lead, Jedec Variation AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO264-003 ©2014 Fairchild Semiconductor Corporation FGL12040WD Rev. C1 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I71 ©2014 Fairchild Semiconductor Corporation FGL12040WD Rev. C1 9 www.fairchildsemi.com FGL12040WD — 1200 V, 40 A Field Stop Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ ®* ® Awinda® FRFET® ® ® SM PowerTrench AX-CAP * Global Power Resource TinyBoost® GreenBridge™ PowerXS™ BitSiC™ TinyBuck® Green FPS™ Programmable Active Droop™ Build it Now™ TinyCalc™ ® Green FPS™ e-Series™ QFET CorePLUS™ TinyLogic® QS™ Gmax™ CorePOWER™ TINYOPTO™ Quiet Series™ GTO™ CROSSVOLT™ TinyPower™ RapidConfigure™ IntelliMAX™ CTL™ TinyPWM™ ™ ISOPLANAR™ Current Transfer Logic™ TinyWire™ Marking Small Speakers Sound Louder DEUXPEED® TranSiC™ Dual Cool™ Saving our world, 1mW/W/kW at a time™ and Better™ TriFault Detect™ EcoSPARK® SignalWise™ MegaBuck™ TRUECURRENT®* EfficentMax™ SmartMax™ MICROCOUPLER™ SerDes™ ESBC™ SMART START™ MicroFET™ Solutions for Your Success™ MicroPak™ ® SPM® MicroPak2™ STEALTH™ UHC® MillerDrive™ Fairchild® Ultra FRFET™ SuperFET® MotionMax™ Fairchild Semiconductor® SuperSOT™-3 UniFET™ MotionGrid® FACT Quiet Series™ ® SuperSOT™-6 MTi VCX™ FACT® ® MTx SuperSOT™-8 VisualMax™ FAST® ® ® MVN SupreMOS VoltagePlus™ FastvCore™ ® mWSaver SyncFET™ XS™ FETBench™ OptoHiT™ Sync-Lock™ Xsens™ FPS™ 仙童 ™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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