MBR5H100MFST1G

MBR5H100MFS, NRVB5H100MFS 5A, 100V SWITCHMODE Power Rectifier These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • Board Mounting Guardring for Stress Protection Low Forward Voltage Drop 175°C Operating Junction Temperature NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS 5,6 1,2,3 MARKING DIAGRAM Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 Average Rectified Forward Current (Rated VR, TC = 150°C) IF(AV) 5 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 150°C) IFRM 10 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 200 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 100 mJ A A 1 SO−8 FLAT LEAD CASE 488AA STYLE 2 B5H100 A Y W ZZ A C B5H100 AYWZZ C Not Used = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability V ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) C ORDERING INFORMATION Device Package Shipping† MBR5H100MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel MBR5H100MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel NRVB5H100MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NRVB5H100MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 4 1 Publication Order Number: MBR5H100MFS/D MBR5H100MFS, NRVB5H100MFS THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RθJC − 2.4 °C/W 0.56 0.6 0.6 0.73 3 0.003 13 0.1 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 5 Amps, TJ = 125°C) (iF = 5 Amps, TJ = 25°C) vF Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 V mA MBR5H100MFS, NRVB5H100MFS TYPICAL CHARACTERISTICS 25°C IF, INSTANTANEOUS FORWARD CURRENT (A) −40°C 125°C 10 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 125°C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E+00 175°C 150°C 125°C 1.E−03 1.E−04 1.E−01 175°C 1.E−02 150°C 125°C 1.E−03 1.E−05 1.E−04 1.E−06 25°C 25°C 1.E−05 1.E−07 −40°C 1.E−06 1.E−08 −40°C 1.E−09 0 10 20 1.E−07 30 40 50 60 70 90 100 80 1.E−08 0 10 20 30 40 50 60 80 70 90 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Characteristics Figure 4. Maximum Reverse Current Characteristics 10,000 CJ, JUNCTION CAPACITANCE (pF) 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E−02 1000 100 0 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E−01 10 −40°C 10 0.1 2.0 1.E+00 1.E−10 175°C IR, INSTANTANEOUS REVERSE CURRENT (A) 0 IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 MAXIMUM FORWARD SURGE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 175°C 150°C 10 20 30 40 50 60 70 80 90 100 300 Single pulse non−repetitive square wave 25°C ambient Mounted on a minimum pad, FR4 board, 1 oz. copper pour 280 260 240 220 200 180 160 140 0 1.0 2.0 3.0 4.0 VR, REVERSE VOLTAGE (V) PULSE DURATION (ms) Figure 5. Typical Junction Capacitance Figure 6. Forward Surge Safe Operating Area http://onsemi.com 3 MBR5H100MFS, NRVB5H100MFS 9 IF, AVERAGE RECTIFIED FORWARD CURRENT (A) IF, AVERAGE RECTIFIED FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 8 7 DC Square Wave 6 5 4 3 2 RqJC = 1°C/W 1 0 150 155 160 165 170 175 5 DC 4 Square Wave 3 2 RqJA = 49°C/W 1 0 0 20 40 80 60 100 120 140 160 180 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 7. Forward Current Derating Over Case Temperature Figure 8. Forward Current Derating Over Ambient Temperature 140 3 TJ = 175°C Assumes 25°C Ambient Temperature 120 100 2 qJA (°C/W) PD, AVERAGE FORWARD POWER DISSIPATION (W) 6 Square Wave DC 1 80 1 oz. Copper PCB 60 2 oz. Copper PCB 40 20 0 0 1 2 3 4 0 5 0 IF, AVERAGE RECTIFIED FORWARD CURRENT (A) 100 200 300 400 500 COPPER HEAT SPREADER AREA Figure 9. Maximum Forward Power Dissipation 600 700 (mm2) Figure 10. Steady State Junction to Ambient Thermal Resistance 10 Assumes 25°C ambient and soldered to a 600 mm2 − 1 oz copper pad on PCB R(t) (°C/W) 50% Duty Cycle 1 20% 10% 5% 0.1 2% 1% 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 PULSE TIME (sec) Figure 11. Transient Thermal Response, Junction to Case http://onsemi.com 4 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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