MBR8H100MFST3G

DATA SHEET www.onsemi.com Switch Mode Power Rectifiers MBR8H100MFS, NRVB8H100MFS SCHOTTKY BARRIER RECTIFIERS 8 AMPERES 100 VOLTS Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • • Board Mounting Guardring for Stress Protection Low Forward Voltage Drop 175°C Operating Junction Temperature WF Suffix for Products with Wettable Flanks NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Value VRRM VRWM VR V 100 Average Rectified Forward Current (Rated VR, TC = 165°C) IF(AV) 8.0 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 162°C) IFRM 16 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 75 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 75 mJ 3B ESD Rating (Machine Model) M4 October, 2022 − Rev. 4 (FULL−CUT SO8FL WF) CASE 507BA DFNW5 SO−8 FLAT LEAD CASE 488AA STYLE 2 MARKING DIAGRAM A C B8H100 AYWZZ A A C Not Used B8H100 A Y W ZZ = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA © Semiconductor Components Industries, LLC, 2015 1 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage ESD Rating (Human Body Model) 5,6 1,2,3 1 Package Shipping† MBR8H100MFST1G SO−8 FL 1500 / (Pb−Free) Tape & Reel MBR8H100MFST3G SO−8 FL 5000 / (Pb−Free) Tape & Reel NRVB8H100MFST1G SO−8 FL 1500 / (Pb−Free) Tape & Reel NRVB8H100MFST3G SO−8 FL 5000 / (Pb−Free) Tape & Reel NRVB8H100MFSWFT1G SO−8 FL 1500 / (Pb−Free) Tape & Reel NRVB8H100MFSWFT3G SO−8 FL 5000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MBR8H100MFS/D MBR8H100MFS, NRVB8H100MFS THERMAL CHARACTERISTICS Symbol Typ Max Unit Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) (Note 2) Characteristic RθJC − 2.2 °C/W Thermal Resistance, Junction−to−Ambient, Steady State (Note 2) RθJA − 53.1 °C/W 0.68 0.81 0.76 0.90 180 0.06 300 2 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 8 Amps, TJ = 125°C) (iF = 8 Amps, TJ = 25°C) vF Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR V mA 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 2. Surface−mounted on FR4 board using a 650 mm2, 1 oz. Cu pad. TYPICAL CHARACTERISTICS 100 TA = 175°C 1 0.1 IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 10 150°C 125°C 25°C 0 0.2 −40°C 0.4 0.6 1.2 1.0 0.8 TA = 175°C 150°C 1 125°C 25°C 0 0.2 0.4 −40°C 0.8 0.6 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E+00 1.E+00 1.E−01 1.E−02 1.E−01 1.E−02 TA = 175°C 1.E−03 1.E−05 1.E−06 1.E−07 TA = 175°C 1.E−03 TA = 150°C TA = 125°C 1.E−04 1.E−08 1.E−09 1.E−10 1.E−11 1.E−12 10 0.1 IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 150°C TA = 125°C 1.E−04 1.E−05 1.E−06 TA = 25°C 1.E−07 TA = 25°C 1.E−08 1.E−09 TA = −40°C 0 10 20 30 40 50 60 70 80 1.E−10 1.E−11 90 100 TA = −40°C 0 10 20 30 40 50 60 70 80 90 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics www.onsemi.com 2 MBR8H100MFS, NRVB8H100MFS TYPICAL CHARACTERISTICS 20 TJ = 25°C 18 IF(AV), AVERAGE FORWARD CURRENT (A) C, JUNCTION CAPACITANCE (pF) 1,000 100 10 0 10 20 30 40 60 50 70 80 90 16 14 10 Square Wave 8 6 4 2 0 100 dc 12 RqJC = 2.2°C/W 60 80 100 120 140 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 8 IPK/IAV = 20 7 160 TJ = 175°C IPK/IAV = 10 6 IPK/IAV = 5 5 4 3 Square Wave 2 dc 1 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% Assumes 25°C ambient and soldered to a 650 mm2 1 oz copper pad 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 TIME (sec) Figure 8. Thermal Response www.onsemi.com 3 10 100 1,000 10,000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA ISSUE A DATE 03 FEB 2021 q q GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX A Y W ZZ = Specific Device Code *This information is generic. Please refer to = Assembly Location device data sheet for actual part marking. = Year Pb−Free indicator, “G” or microdot “ G”, = Work Week may or may not be present. Some products = Lot Traceability may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON26450H Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFNW5 5x6 (FULL−CUT SO8FL WF) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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