MBR5H100MFS,
NRVB5H100MFS
5A, 100V SWITCHMODE
Power Rectifier
These state−of−the−art devices have the following features:
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
•
•
•
•
•
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
175°C Operating Junction Temperature
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
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SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
100 VOLTS
5,6
1,2,3
MARKING
DIAGRAM
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
Average Rectified Forward Current
(Rated VR, TC = 150°C)
IF(AV)
5
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 150°C)
IFRM
10
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM
200
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +175
°C
Voltage Rate of Change
(Rated VR)
dv/dt
10,000
V/ms
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
EAS
100
mJ
A
A
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B5H100
A
Y
W
ZZ
A
C
B5H100
AYWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
V
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
C
ORDERING INFORMATION
Device
Package
Shipping†
MBR5H100MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
MBR5H100MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB5H100MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB5H100MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 4
1
Publication Order Number:
MBR5H100MFS/D
MBR5H100MFS, NRVB5H100MFS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Typ
Max
Unit
RθJC
−
2.4
°C/W
0.56
0.6
0.6
0.73
3
0.003
13
0.1
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 5 Amps, TJ = 125°C)
(iF = 5 Amps, TJ = 25°C)
vF
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
V
mA
MBR5H100MFS, NRVB5H100MFS
TYPICAL CHARACTERISTICS
25°C
IF, INSTANTANEOUS FORWARD
CURRENT (A)
−40°C
125°C
10
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
125°C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8 2.0
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
175°C
150°C
125°C
1.E−03
1.E−04
1.E−01
175°C
1.E−02
150°C
125°C
1.E−03
1.E−05
1.E−04
1.E−06
25°C
25°C
1.E−05
1.E−07
−40°C
1.E−06
1.E−08
−40°C
1.E−09
0
10
20
1.E−07
30
40
50
60
70
90 100
80
1.E−08
0
10
20
30
40
50
60
80
70
90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Characteristics
Figure 4. Maximum Reverse Current
Characteristics
10,000
CJ, JUNCTION CAPACITANCE (pF)
25°C
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E−02
1000
100
0
1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E−01
10
−40°C
10
0.1
2.0
1.E+00
1.E−10
175°C
IR, INSTANTANEOUS REVERSE CURRENT (A)
0
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.1
MAXIMUM FORWARD SURGE CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
175°C
150°C
10
20
30
40
50
60
70
80
90
100
300
Single pulse non−repetitive square
wave 25°C ambient
Mounted on a minimum pad, FR4
board, 1 oz. copper pour
280
260
240
220
200
180
160
140
0
1.0
2.0
3.0
4.0
VR, REVERSE VOLTAGE (V)
PULSE DURATION (ms)
Figure 5. Typical Junction Capacitance
Figure 6. Forward Surge Safe Operating Area
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3
MBR5H100MFS, NRVB5H100MFS
9
IF, AVERAGE RECTIFIED FORWARD
CURRENT (A)
IF, AVERAGE RECTIFIED FORWARD
CURRENT (A)
TYPICAL CHARACTERISTICS
8
7
DC
Square
Wave
6
5
4
3
2
RqJC = 1°C/W
1
0
150
155
160
165
170
175
5
DC
4
Square
Wave
3
2
RqJA = 49°C/W
1
0
0
20
40
80
60
100
120
140
160 180
TC, CASE TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Forward Current Derating Over Case
Temperature
Figure 8. Forward Current Derating Over
Ambient Temperature
140
3
TJ = 175°C
Assumes 25°C
Ambient Temperature
120
100
2
qJA (°C/W)
PD, AVERAGE FORWARD POWER
DISSIPATION (W)
6
Square
Wave
DC
1
80
1 oz. Copper PCB
60
2 oz. Copper PCB
40
20
0
0
1
2
3
4
0
5
0
IF, AVERAGE RECTIFIED FORWARD CURRENT (A)
100
200
300
400
500
COPPER HEAT SPREADER AREA
Figure 9. Maximum Forward Power
Dissipation
600
700
(mm2)
Figure 10. Steady State Junction to Ambient
Thermal Resistance
10
Assumes 25°C ambient and soldered
to a 600 mm2 − 1 oz copper pad on PCB
R(t) (°C/W)
50% Duty Cycle
1
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.000001 0.00001
0.0001
0.001
0.1
0.01
1
PULSE TIME (sec)
Figure 11. Transient Thermal Response, Junction to Case
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4
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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