MBRS330T3G

MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS Features • • • • • • • • • Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.5 V Max @ 3.0 A, TJ = 25°C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard-Ring for Stress Protection Device Passes ISO 7637 Pulse #1 SBRS8 and NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 217 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band on Plastic Body Indicates Cathode Lead Device Meets MSL 1 Requirements ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) SMC 2−LEAD CASE 403AC MARKING DIAGRAM AYWW B3xG G B3x x A Y WW G = Device Code = 2, 3 or 4 = Assembly Location** = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† MBRS320T3G SMC (Pb−Free) 2,500 / Tape & Reel MBRS330T3G SMC (Pb−Free) 2,500 / Tape & Reel MBRS340T3G SMC (Pb−Free) 2,500 / Tape & Reel NRVBS330T3G SMC (Pb−Free) 2,500 / Tape & Reel SBRS8320T3G* SMC (Pb−Free) 2,500 / Tape & Reel SBRS8340T3G* SMC (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 August, 2017 − Rev. 14 1 Publication Order Number: MBRS340T3/D MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR Average Rectified Forward Current IF(AV) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Operating Junction Temperature MBRS320T3G, SBRS8320T3G MBRS330T3G, NRVBRS330T3G MBRS340T3G, SBRS8340T3G Unit 20 30 40 V 3.0 @ TL = 110°C 4.0 @ TL = 105°C A A 80 TJ − 65 to +150 ISO 7637 Pulse #1 (100 V, 10W) °C Pulses 5000 ESD Ratings: Machine Model = C Human Body Model = 3B V > 400 > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Lead 11 RqJL °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR V 0.50 mA 2.0 20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. TYPICAL ELECTRICAL CHARACTERISTICS 10 TJ = 100°C TJ = 125°C 1 0.1 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 25°C TJ = −40°C TJ = −65°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.0 TJ = 25°C TJ = −40°C TJ = −65°C 0.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) TJ = 100°C TJ = 125°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G 1.E−01 IR, REVERSE CURRENT (AMPS) 1.E−01 TJ = 125°C 1.E−02 1.E−02 TJ = 125°C 1.E−03 1.E−03 TJ = 100°C TJ = 100°C 1.E−04 1.E−04 1.E−05 1.E−06 IR, MAXIMUM REVERSE CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS (continued) TJ = 25°C 0 5 TJ = 25°C 1.E−05 10 15 20 25 30 35 40 1.E−06 5 0 10 VR, REVERSE VOLTAGE (V) PFO, AVERAGE POWER DISSIPATION (W) Freq = 20 kHz RqJL = 11°C/W dc 4 3.5 3 2.5 SQUARE WAVE 2 1.5 1 0.5 0 90 100 110 130 120 140 150 1.8 1.6 IPK/IO = p 1.4 SQUARE WAVE dc 0.8 0.6 0.4 0.2 0 0 1 0.5 2 1.5 2.5 3 3.5 4 4.5 IO, AVERAGE FORWARD CURRENT (A) Figure 6. Forward Power Dissipation TYPICAL CAPACITANCE AT 0 V = 658 pF TJ = 25°C 500 400 300 200 100 4 40 1 600 0 35 30 IPK/IO = 5 1.2 Figure 5. Current Derating 0 25 2 TL, LEAD TEMPERATURE (°C) 700 20 Figure 4. Maximum Reverse Current 5 C, CAPACITANCE (pF) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Reverse Current 4.5 15 VR, REVERSE VOLTAGE (V) 8 12 16 20 24 28 32 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance www.onsemi.com 3 36 40 5 MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G PACKAGE DIMENSIONS SMC 2−LEAD CASE 403AC ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.254mm PER SIDE. 4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H. 5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA DETERMINED BY DIMENSION L. HE E D A1 DIM A A1 A2 b c D E HE L c J DETAIL A TOP VIEW DETAIL A A2 L A MILLIMETERS MIN MAX 1.95 2.61 0.05 0.20 1.90 2.41 2.90 3.20 0.15 0.41 5.55 6.25 6.60 7.15 7.75 8.15 0.75 1.60 INCHES MIN MAX 0.077 0.103 0.002 0.008 0.075 0.095 0.114 0.126 0.006 0.016 0.219 0.246 0.260 0.281 0.305 0.321 0.030 0.063 b END VIEW SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* 8.750 0.344 J 2X 3.790 0.149 2X 2.250 0.089 mm Ǔ ǒinches SCALE 4:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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