MC10EL52DTR2

5 V ECL Differential Data and Clock D Flip‐Flop MC10EL52, MC100EL52 Description The MC10EL/100EL52 is a differential data, differential clock D flip-flop with reset. The device is functionally equivalent to the E452 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E452, the EL52 is ideally suited for those applications which require the ultimate in AC performance. Data enters the master portion of the flip-flop when the clock is LOW and is transferred to the slave, and thus the outputs, upon a positive transition of the clock. The differential clock inputs of the EL52 allow the device to also be used as a negative edge triggered device. The EL52 employs input clamping circuitry so that under open input conditions (pulled down to VEE) the outputs of the device will remain stable. The 100 Series contains temperature compensation. www.onsemi.com 8 1 SOIC−8 NB D SUFFIX CASE 751−07 MARKING DIAGRAM 8 HEL52 ALYW  1 Features • 365 ps Propagation Delay • 2.0 GHz Toggle Frequency • ESD Protection: 8 > 1 kV Human Body Model > 100 V Machine Model PECL Mode Operating Range: VCC = 4.2 V to 5.7 V with VEE = 0 V NECL Mode Operating Range: VCC = 0 V with VEE = −4.2 V to −5.7 V Internal Input Pulldown Resistors on D and CLK Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test Moisture Sensitivity: ♦ Level 1 for SOIC−8 NB ♦ For Additional Information, see Application Note AND8003/D Flammability Rating: UL 94 V−0 @ 0.125 in, Oxygen: Index 28 to 34 Transistor Count = 48 Devices These Devices are Pb-Free, Halogen Free and are RoHS Compliant KEL52 ALYW  ♦ • • • • • • • • ♦ 1 H = MC10 K = MC100 A = Assembly Location L = Wafer Lot Y = Year W = Work Week  = Pb-Free Package (Note: Microdot may be in either location) *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION Package Shipping† MC10EL52DG SOIC−8NB (Pb-Free) 98 Units/Tube MC10EL52DR2G SOIC−8 NB (Pb-Free) 2500 Tape & Reel MC100EL52DG SOIC−8 NB (Pb-Free) 98 Units/Tube Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 March, 2021 − Rev. 8 1 Publication Order Number: MC10EL52/D MC10EL52, MC100EL52 Table 1. TRUTH TABLE D D 1 8 D 2 7 VCC Q D* CLK* Q L H Z Z L H Z = LOW to HIGH Transition * Pin will default low when left open. CLK 3 6 Table 2. PIN DESCRIPTION Q PIN CLK 4 5 FUNCTION D, D CLK, CLK Q, Q VCC VEE VEE Figure 1. Logic Diagram and Pinout Assignment ECL Data Input ECL Clock Input ECL Data Output Positive Supply Negative Supply Table 3. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Unit VCC PECL Mode Power Supply VEE = 0 V 8 V VEE NECL Mode Power Supply VCC = 0 V −8 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V 6 −6 V Iout Output Current Continuous Surge 50 100 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm SOIC−8 NB SOIC−8 NB 190 130 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board SOIC−8 NB 41 to 44 °C/W Tsol Wave Solder (Pb-Free) < 2 to 3 sec @ 260°C 265 °C VI ≤ VCC VI ≥ VEE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2 MC10EL52, MC100EL52 Table 4. 10EL SERIES PECL DC CHARACTERISTICS (VCC = 5.0 V; VEE = 0 V (Note 1)) −40°C Symbol Characteristic Min 25°C Typ Max 21 25 Min 85°C Typ Max 21 25 Min Typ Max Unit 21 25 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 3920 4010 4110 4020 4105 4190 4090 4185 4280 mV VOL Output LOW Voltage (Note 2) 3050 3200 3350 3050 3210 3370 3050 3227 3405 mV VIH Input HIGH Voltage (Single-Ended) 3770 4110 3870 4190 3940 4280 mV VIL Input LOW Voltage (Single-Ended) 3050 3500 3050 3520 3050 3555 mV VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) D CLK IIH Input HIGH Current IIL Input LOW Current V 3.4 2.5 4.6 4.4 3.4 2.5 4.6 4.4 150 0.5 3.4 2.5 4.6 4.4 150 0.5 150 0.3 mA mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.25 V / −0.5 V for +25°C and +85°C. or VEE can vary +0.06 V / −0.5 V for −40°C. 2. Outputs are terminated through a 50 ohm resistor to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin and 1 V. Table 5. 10EL SERIES NECL DC CHARACTERISTICS (VCC = 0 V; VEE = −5.0 V (Note 1)) −40°C Symbol Characteristic Min Typ 25°C Max Min Typ 85°C Max Min Typ Max Unit IEE Power Supply Current 21 25 21 25 21 25 mA VOH Output HIGH Voltage (Note 2) −1080 −990 −890 −980 −895 −810 −910 −815 −720 mV VOL Output LOW Voltage (Note 2) −1950 −1800 −1650 −1950 −1790 −1630 −1950 −1773 −1595 mV VIH Input HIGH Voltage (Single-Ended) −1230 −890 −1130 −810 −1060 −720 mV VIL Input LOW Voltage (Single-Ended) −1950 −1500 −1950 −1480 −1950 −1445 mV VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) D CLK IIH Input HIGH Current IIL Input LOW Current V −1.6 −2.5 −0.4 −0.6 −1.6 −2.5 150 0.5 −0.4 −0.6 −1.6 −2.5 150 0.5 −0.4 −0.6 150 0.3 mA mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.25 V / −0.5 V for +25°C and +85°C. or VEE can vary +0.06 V / −0.5 V for −40°C. 2. Outputs are terminated through a 50 ohm resistor to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin and 1 V. www.onsemi.com 3 MC10EL52, MC100EL52 Table 6. 100EL SERIES PECL DC CHARACTERISTICS (VCC = 5.0 V; VEE = 0 V (Note 1)) −40°C Symbol Characteristic Min 25°C Typ Max 21 25 Min 85°C Typ Max 21 25 Min Typ Max Unit 24 29 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 3915 3995 4120 3975 4045 4120 3975 4050 4120 mV VOL Output LOW Voltage (Note 2) 3170 3305 3445 3190 3295 3380 3190 3295 3380 mV VIH Input HIGH Voltage (Single-Ended) 3835 4120 3835 4120 3835 4120 mV VIL Input LOW Voltage (Single-Ended) 3190 3525 3190 3525 3190 3525 mV 2.6 2.5 4.6 4.2 2.6 2.5 4.6 4.2 2.6 2.5 4.6 4.2 VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) D CLK IIH Input HIGH Current IIL Input LOW Current V 150 0.5 150 0.5 150 0.5 mA mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / −0.5 V. 2. Outputs are terminated through a 50 ohm resistor to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin and 1 V. Table 7. 100EL SERIES NECL DC CHARACTERISTICS (VCC = 0 V; VEE = −5.0 V (Note 1)) −40°C Symbol Characteristic Min 25°C Typ Max 21 25 Min 85°C Typ Max 21 25 Min Typ Max Unit 24 29 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) −1085 −1005 −880 −1025 −955 −880 −1025 −955 −880 mV VOL Output LOW Voltage (Note 2) −1830 −1695 −1555 −1810 −1705 −1620 −1810 −1705 −1620 mV VIH Input HIGH Voltage (Single-Ended) −1165 −880 −1165 −880 −1165 −880 mV VIL Input LOW Voltage (Single-Ended) −1810 −1475 −1810 −1475 −1810 −1475 mV −2.4 −2.5 −0.4 −0.8 −2.4 −2.5 −0.4 −0.8 −2.4 −2.5 −0.4 −0.8 VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) D CLK IIH Input HIGH Current IIL Input LOW Current V 150 0.5 150 0.5 150 0.5 mA mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / −0.5 V. 2. Outputs are terminated through a 50 ohm resistor to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin and 1 V. www.onsemi.com 4 MC10EL52, MC100EL52 Table 8. AC CHARACTERISTICS (VCC = 5.0 V; VEE = 0 V or VCC = 0 V; VEE = −5.0 V (Note 1)) −40°C Symbol Characteristic Min Typ 25°C Max Min Typ 2.2 2.8 275 365 85°C Max Min Typ 2.2 2.8 320 410 Max Unit fmax Maximum Toggle Frequency 1.8 2.5 tPLH tPHL Propagation Delay to Output CLK 225 335 tS Setup Time 125 0 125 0 125 0 ps tH 50 150 50 150 50 ps Hold Time 150 tPW Minimum Pulse Width 400 VPP Input Swing (Note 2) 150 tJITTER Cycle-to-Cycle Jitter tr tf 515 400 1000 100 225 1000 100 1000 TBD 225 350 100 ps ps 150 TBD 350 510 400 150 TBD Output Rise/Fall Times Q (20%−80%) 465 GHz 225 mV ps 350 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. 10 Series: VEE can vary +0.25 V / −0.5 V for +25°C and +85°C. or VEE can vary +0.06 V / −0.5 V for −40°C 100 Series: VEE can vary +0.8 V / −0.5 V. 2. VPP(min) is minimum input swing for which AC parameters guaranteed. The device has a DC gain of ≈40. Q Zo = 50 W D Receiver Device Driver Device Q D Zo = 50 W 50 W 50 W VTT VTT = VCC − 3.0 V Figure 2. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8020/D − Termination of ECL Logic Devices) Resource Reference of Application Notes AN1405/D − ECL Clock Distribution Techniques AN1406/D − Designing with PECL (ECL at +5.0 V) AN1503/D − ECLinPS I/O SPiCE Modeling Kit AN1504/D − Metastability and the ECLinPS Family AN1568/D − Interfacing Between LVDS and ECL AN1672/D − The ECL Translator Guide AND8001/D − Odd Number Counters Design AND8002/D − Marking and Date Codes AND8020/D − Termination of ECL Logic Devices AND8066/D − Interfacing with ECLinPS AND8090/D − AC Characteristics of ECL Devices ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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