MMBT5401M3T5G

MMBT5401M3 High Voltage Transistor PNP Silicon The MMBT5401M3 device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. www.onsemi.com Features SOT−723 CASE 631AA • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −60 mAdc Collector Current − Continuous 2 EMITTER MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Junction and Storage Temperature Symbol Max Unit PD 130 mW 1.0 mW/°C RqJA 470 °C/W TJ, Tstg −55 to +150 °C 1. FR−5 @ 100 mm2, 1.0 oz. copper traces, still air. RJ M 1 RJ M = Specific Device Code = Date Code ORDERING INFORMATION Package Shipping† SOT−723 (Pb−Free) 8000 / Tape & Reel NSVMMBT5401M3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel Device MMBT5401M3T5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2017 June, 2019 − Rev. 1 1 Publication Order Number: MMBT5401M3/D MMBT5401M3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit −150 − − −160 − − −5.0 − − − −1.6 −100 nA − −0.20 −100 nA 50 60 20 80 90 40 − 240 − − − −0.09 −0.15 −0.25 −0.60 − − −0.76 −0.92 −1.0 −1.0 100 180 300 − 12.5 15 − 1.5 6.0 40 − 200 − − 8.0 OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −1.0 mA, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −100 mA, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −10 mA, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = −120 V, IE = 0) ICBO Emitter Cutoff Current (VBE = −5 V) IEBO V V V ON CHARACTERISTICS DC Current Gain (IC = −1.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) (IC = −50 mA, VCE = −5.0 V) hFE Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −1.0 mA) (IC = −50 mA, IB = −5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −1.0 mA) (IC = −50 mA, IB = −5.0 mA) VBE(sat) − V V SMALL− SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = −10 mA, VCE = −5.0 V, f = 100 MHz) fT Input Capacitance (VEB = −3 V, IC = 0, f = 1.0 MHz) Cibo Output Capacitance (VCB = −10 V, IE = 0, f = 1.0 MHz) Cobo Small Signal Current Gain (IC = −1.0 mA, VCE = −10 V, f = 1.0 kHz) hfe Noise Figure (IC = −200 mA, VCE = −5.0 V, RS = 10 W, f = 1.0 kHz) NF MHz pF pF − dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 MMBT5401M3 TYPICAL CHARACTERISTICS 180 +150°C 140 +125°C 120 +85°C 100 +25°C 80 60 −55°C 40 140 +125°C 120 +25°C 80 60 −55°C 40 20 0 0.0001 0.001 0.01 Figure 2. DC Current Gain 2 40 mA VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 50 mA 20 mA 10 mA 60 mA IC = 1.0 mA 0.6 0.4 0.2 0 0.005 0.05 5 0.5 IC/IB = 10 +150°C 0.2 +125°C +85°C 0.02 0.0001 50 0.001 +25°C −55°C 0.01 0.1 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (A) Figure 3. Collector Saturation Region Figure 4. Collector−Emitter Saturation Region 1 IC/IB = 20 +150°C +125°C 0.1 +85°C 0.01 0.0001 0.1 IC, COLLECTOR CURRENT (A) 1.4 0.8 0.01 Figure 1. DC Current Gain 30 mA 1.0 0.001 IC, COLLECTOR CURRENT (A) 1.6 1.2 0 0.0001 0.1 0.001 +25°C −55°C 0.01 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) +85°C 100 20 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 5 V +150°C 160 hFE, CURRENT GAIN hFE, CURRENT GAIN 160 180 VCE = 2 V 0.1 +150°C IC/IB = 50 −55°C +125°C 0.1 +85°C 0.01 0.0001 0.001 +25°C 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Collector−Emitter Saturation Region Figure 6. Collector−Emitter Saturation Region www.onsemi.com 3 0.1 MMBT5401M3 1.0 −55°C VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 0.8 +25°C +85°C 0.6 +150°C 0.4 +125°C 0.2 −55°C 0.8 +25°C +85°C 0.6 +150°C 0.4 +125°C 0.2 IC/IB = 20 IC/IB = 10 0 0.0001 0.001 0.01 0 0.0001 0.1 0.001 IC, COLLECTOR CURRENT (A) 1.0 25 −55°C Cibo, INPUT CAPACITANCE (pF) VBE(on), BASE−EMITTER VOLTAGE (V) Figure 8. Base−Emitter Saturation Voltage 0.8 +25°C 0.6 +85°C +150°C 0.4 +125°C 0.2 VCE = 2 V 0.2 0.0001 0.001 0.01 TA = 25°C f = 1 MHz 20 15 10 5 0 0.1 0 −1 −2 −4 −3 IC, COLLECTOR CURRENT (A) VBE, BASE−EMITTER VOLTAGE (V) Figure 9. Base−Emitter “ON” Voltage Figure 10. Input Capacitance −5 1000 8 TA = 25°C f = 1 MHz 7 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) Cobo, OUTPUT CAPACITANCE (pF) 0.1 IC, COLLECTOR CURRENT (A) Figure 7. Base−Emitter Saturation Voltage 6 5 4 3 2 1 0 0.01 0 −5 −10 −15 −20 100 10 1 −30 −25 TJ = 25°C VCE = −5 V ftest = 100 MHz 1 10 VCB, COLLECTOR−BASE REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 11. Output Capacitance Figure 12. Current Gain Bandwidth Product www.onsemi.com 4 100 MMBT5401M3 20000 20000 tf @ VCC = 120 V 15000 10000 t, TIME (ns) tr @ VCC = 120 V tr @ VCC = 30 V td @ VCC = 30 V 5000 0 0.1 10000 tf @ VCC = 30 V ts @ VCC = 120 V ts @ VCC = 30 V 5000 1 10 0 0.1 100 IC, COLLECTOR CURRENT (mA) 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 13. Turn−On Time Figure 14. Turn−Off Time 1 IC, COLLECTOR CURRENT (A) t, TIME (ns) 15000 VCC -30, -120 V VBB +8.8 V 10.2 V 100 Vin 10 ms INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 mF 3.0 k RC Vout RB 5.1 k Vin 100 1N4148 1s 10 ms 1 ms 0.1 0.01 0.1 Values Shown are for IC @ 10 mA 100 ms 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 15. Switching Time Test Circuit Figure 16. Safe Operating Area www.onsemi.com 5 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L GENERIC MARKING DIAGRAM* L2 BOTTOM VIEW STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M 1 XX M RECOMMENDED SOLDERING FOOTPRINT* = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 2X 0.40 2X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12989D SOT−723 Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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