MMBT5401WT1G

MMBT5401W High Voltage Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring • www.onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −500 mAdc Collector Current − Continuous 2 EMITTER SC−70 (SOT−323) CASE 419 STYLE 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 2) TA = 25°C Derate Above 25°C PD 400 mW 3.2 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 312 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature 1. FR−5 @ 100 mm2, 0.5 oz. copper traces, still air. 2. FR− 5 = 1.0  0.75  0.062 in. MARKING DIAGRAM 4W MG G 1 4W M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package MMBT5401WT1G, SC−70 NSVMMBT5401WT1G (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 December, 2017 − Rev. 3 1 Publication Order Number: MMBT5401W/D MMBT5401W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max −150 − −160 − −5.0 − − − −50 −50 50 60 50 − 240 − − − −0.2 −0.5 − − −1.0 −1.0 100 300 − 6.0 40 200 − 8.0 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = −120 Vdc, IE = 0) (VCB = −120 Vdc, IE = 0, TA = 100°C) Vdc Vdc Vdc ICBO nAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = −1.0 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −50 mAdc, VCE = −5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz) fT Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) MHz Cobo Small Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe Noise Figure (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz) NF pF − dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 MMBT5401W 1000 hFE, CURRENT GAIN VCE = 5 V TJ = 150°C TJ = 25°C 100 TJ = −55°C 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT (A) μ VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 102 VCE = 30 V IC = ICES 101 TJ = 125°C 100 75°C 10-1 10-2 REVERSE 25°C 10-3 0.3 0.2 FORWARD 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut−Off Region www.onsemi.com 3 0.6 0.7 10 20 50 MMBT5401W 1.0 IC/IB = 10 0.18 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.20 0.15 0.13 150°C 0.10 25°C 0.08 0.05 −55°C 0.03 0.8 25°C 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0 0.0001 0.001 0.01 0.0001 0.1 IC, COLLECTOR CURRENT (A) θV, TEMPERATURE COEFFICIENT (mV/ °C) VBE(on), BASE−EMITTER VOLTAGE (V) VCE = 10 V −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 2.5 1.5 1.0 0.5 -0.5 -1.0 -1.5 qVB for VBE(sat) -2.0 -2.5 0.1 0.1 qVC for VCE(sat) 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Base Emitter Voltage vs. Collector Current 100 70 50 C, CAPACITANCE (pF) VCC -30 V 100 10 ms INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 mF 3.0 k RC Vout RB 5.1 k Vin 100 50 100 Figure 7. Temperature Coefficients 10.2 V Vin 0.1 TJ = - 55°C to 135°C 2.0 IC, COLLECTOR CURRENT (A) VBB +8.8 V 0.01 Figure 5. Base Emitter Saturation Voltage vs. Collector Current 1.1 0.9 0.001 IC, COLLECTOR CURRENT (A) Figure 4. Collector Emitter Saturation Voltage vs. Collector Current 1.0 −55°C 0.9 TJ = 25°C 30 Cibo 20 10 7.0 5.0 Cobo 3.0 1N914 2.0 1.0 0.2 Values Shown are for IC @ 10 mA Figure 8. Switching Time Test Circuit 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Figure 9. Capacitances www.onsemi.com 4 10 20 MMBT5401W 1000 700 500 2000 IC/IB = 10 TJ = 25°C tr @ VCC = 120 V tr @ VCC = 30 V 200 t, TIME (ns) t, TIME (ns) 300 1000 700 500 100 70 50 td @ VBE(off) = 1.0 V VCC = 120 V 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 tf @ VCC = 30 V 300 200 ts @ VCC = 120 V 30 50 100 20 0.2 0.3 0.5 200 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 10. Turn−On Time Figure 11. Turn−Off Time 50 100 200 1 1000 VCE = 1 V TA = 25°C IC, COLLECTOR CURRENT (A) fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) tf @ VCC = 120 V 100 70 50 30 20 IC/IB = 10 TJ = 25°C 100 10 0.1 10 mSec 0.1 1 Sec 0.01 0.001 1 10 1 100 IC, COLLECTOR CURRENT (A) 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Current Gain Bandwidth Product Figure 13. Safe Operating Area www.onsemi.com 5 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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