MMBT5401-G

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T MMBT5401 TRANSISTOR (PNP) SOT–23 FEATURES  Complementary to MMBT5551  Ideal for Medium Power Amplification and Switching 1. BASE MARKING: 2L 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Collector Power Dissipation 0.3 W Thermal Resistance from Junction to Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Emitter cut-off current IEBO DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Test conditions Min Typ Max Unit IC=-100µA, IE=0 -160 V IC=-1mA, IB=0 -150 V IE=-10µA, IC=0 -5 V VCB=-120V, IE=0 -0.1 μA VEB=-4V, IC=0 -0.1 μA hFE(1) * VCE=-5V, IC=-1mA 80 hFE(2) * VCE=-5V, IC=-10mA 100 hFE(3) * VCE=-5V, IC=-50mA 50 300 VCE(sat)1 * IC=-10mA, IB=-1mA -0.2 V VCE(sat)2 * IC=-50mA, IB=-5mA -0.5 V VBE(sat)1 * IC=-10mA, IB=-1mA -1 V VBE(sat)2 * IC=-50mA, IB=-5mA -1 V Transition frequency fT VCE=-5V,IC=-10mA, f=30MHz 100 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE (2) www.cj-elec.com RANK L H RANGE 100-200 200-300 1 D,Oct,2014 A,Jun,2014 Typical Characteristics Static Characteristic -20 -100uA VCE=-5V COMMON EMITTER Ta=25℃ -90uA o hFE -70uA 200 -12 -60uA -10 -50uA -8 -40uA -6 Ta=100 C 250 -80uA DC CURRENT GAIN (mA) -14 COLLECTOR CURRENT -16 IC -18 hFE —— IC 300 150 o Ta=25 C 100 -30uA -4 50 -20uA -2 IB=-10uA -0 -0 -3 0 -6 -9 COLLECTOR-EMITTER VOLTAGE VCE -1 VBEsat —— IC -1.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -0.6 Ta=100℃ -0.4 -0.2 -1 -10 COLLECTOR CURRENT IC IC -0.1 Ta=25℃ -1 (mA) -10 Cob / Cib 100 (mA) IC —— VCB / VEB VCE=-5V o (pF) o Ta=100 C Ta=25℃ -1 -0.2 -0.4 -0.6 -0.8 BASE-EMITTER VOLTAGE fT 10 Cob 1 -0.5 -1.0 -1 -10 REVERSE VOLTAGE VBE(V) —— IC Pc 0.4 COLLECTOR POWER DISSIPATION Pc (W) 300 250 fT (MHz) Cib C -10 CAPACITANCE COLLECTOR CURRENT IC (mA) f=1MHz IE=0 / IC=0 Ta=25 C -0.1 -0.0 TRANSITION FREQUENCY -600 -100 COLLECTOR CURRENT IC —— V BE -100 (mA) Ta=100℃ -0.01 -0.1 -600 -100 IC β=10 Ta=25℃ -0.0 -0.1 -600 -100 VCEsat —— -1 β=10 -0.8 -10 COLLECTOR CURRENT (V) 200 150 100 50 —— V (V) Ta 0.3 0.2 0.1 VCE=-5V o Ta=25 C 0 0.0 -0 -5 -10 -15 COLLECTOR CURRENT www.cj-elec.com -20 IC -25 -30 0 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃) D,Oct,2014 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 D,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 D,Oct,2014 A,Jun,2014