ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NCP5358
Gate Driver for Desktop
Power Systems
QFN−16
CASE 485D
4x4 mm
N5358
A
L
Y
W
G
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
PIN CONNECTIONS
GND
Faster Rise and Fall Times
Thermal Shutdown Protection
Adaptive−Non−Overlap Circuit
Floating Top Driver Accommodates Boost voltage of up to 30 V
Output Disable Control Turn Off Both MOSFETs
Complies with VR11.1 Specifications
Under−Voltage Lock Out
Power Saving Operation under Light Load Condition
Thermally Enhanced Package Available
These are Pb−Free Devices
N5358
ALYWG
G
PWM2
•
•
•
•
•
•
•
•
•
•
MARKING DIAGRAM
PWM1
Features
http://onsemi.com
EN
The NCP5358 is a high performance two channel gate driver. It
combines two single NCP5359 gate drivers together and provides an
optimized solution for multi−phase application. Each channel gate
driver has both high−side and low side power MOSFETs in a
synchronous buck converter. Also, it can drive up to 3 nF load with a
25 ns propagation delay and 20 ns transition time.
An adaptive non−overlap and power saving operation circuit has
built in. It can provide a low switching loss and high efficiency
solution in notebook and desktop systems. Thus, this controller has
three protection functions, under voltage lockout (UVLO), over
voltage protection (OVP) and thermal shutdown.
The NCP5358 is available in 4x4 mm QFN16 package.
SW2
VCC
DRVH2
SW1
Typical Applications
• Power Solutions for Desktop and Notebook system.
DRVH1
BST2
BST1
VCCP
DRVL2
PGND2
PGND1
DRVL1
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
NCP5358MNTXG
QFN−16
(Pb−Free)
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 0
1
Publication Order Number:
NCP5358/D
NCP5358
BST1
ChipEN
DRVH comparator
PWM >2V =1,
else = 0
PWM1
DRVH1
Level
Shift and
Driver
Falling Edge
Delay
100K
SW1
FPWM comparator
1V < PWM < 2V =1,
else = 0
CH1
SW1
PGND1
100K
Falling Edge
Delay
1mV
R
S
Q
Q
ChipEN
VCCP
DRVL1
Driver
Pre−OV
ChipEN
EN
VCC
VCCP
VCC
GND
Fault
SW1
SW2
UVLO
Pre −Over
Voltage
VCCP
Fault
Thermal
Shutdown
EN
Pre−OV
ChipEN
BST2
DRVH2
PWM2
PGND2
CH2
SW 2
DRVL2
Figure 1. Internal Block Diagram and Typical Application
http://onsemi.com
2
NCP5358
VCCP
VBAT
BST1
DRVH1
PWM1
SW1
EN
PGND1
Vo
DRVL1
VCC
NCP5358
PGND1
VCCP
GND
VBAT
VCCP
BST2
DRVH2
PWM2
SW 2
DRVL2
Vo
PGND2
PGND2
Figure 2. Typical Applications
http://onsemi.com
3
NCP5358
PIN DESCRIPTION
Pin NO.
Symbol
Descriptions
1
VCC
Analog logic input power pin
2
SW 1
PWM 1 Switch Node pin
3
DRVH 1
PWM 1 High side gate drive output
4
BST1
5
DRVL 1
Upper MOSFET floating bootstrap supply pin
PWM 1 Low side gate drive output
6
PGND 1
PWM 1 Ground pin
7
PGND 2
PWM 2 Ground pin
8
DRVL 2
PWM 2 Low side gate drive output
9
VCCP
Connect to input power supply 10 V to 13.2 V
10
BST 2
Upper MOSFET floating bootstrap supply pin
11
DRVH 2
12
SW 2
PWM 2 Switch Node pin
13
GND
Analog logic ground pin
14
PWM 2
PWM2 input pin
When PWM voltage is higher than 2 V, DRVH will set to 1 and DRVL set to 0
When PWM voltage is lower than 1 V, DRVL set to 1 and DRVH set to 0
When 1 V < PWM < 2V and SW < 0, DRVL will set to 1
When 1 V < PWM < 2V and SW > 0, DRVL will set to 0
15
PWM 1
PWM1 input pin
When PWM voltage is higher than 2 V, DRVH will set to 1 and DRVL set to 0
When PWM voltage is lower than 1 V, DRVL set to 1 and DRVH set to 0
When 1 V < PWM < 2 V and SW < 0, DRVL will set to 1
When 1 V < PWM < 2 V and SW > 0, DRVL will set to 0
16
EN
PWM 2 High side gate drive output
Both Channel Enable pin
When OVP, TSD or UVLO has happened, the gate driver will pull the pin to low
http://onsemi.com
4
NCP5358
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
RθJA
110
°C/W
TJ
0 to + 150
°C
Thermal Characteristics
Plastic Package, Thermal Resistance, Junction to Air (1 in2 of 2 oz copper)
Operating Junction Temperature Range
Operating Ambient Temperature Range
TA
0 to +85
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Moisture Sensitivity Level
MSL
1
−
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Pin Symbol
Pin Name
VMAX
VMIN
VCC
Main Supply Voltage input
15 V
−0.3 V
VCCP
Main Supply Voltage input
15 V
−0.3 V
BST1, BST2
Bootstrap Supply voltage
30 V wrt / GND
35 V ≤ 50 ns wrt / GND
15 wrt / SW
−0.3 V
SW1,SW2
Switching Node
(Bootstrap Supply Return)
30 V
−1 VDC
−10 V (200 ns)
DRVH1, DRVH2
High Side Driver output
BST + 0.3 V
35 V ≤ 50 ns wrt / GND
15 wrt / SW
−0.3 V
−2 V (200 ns)
DRVL1, DRVL2
Low Side Driver output
Vcc + 0.3 V
−0.3 V
−2 V (200 ns)
PWM1, PWM2
DRVH and DRVL Control Input
6V
−0.3 V
EN
Enable Pin
6V
−0.3 V
GND
Ground
0
0V
1. Latchup Current Maximum Rating: 100 mA per JEDEC standard: JESD78.
2. Moisture Sensitivity Level (MSL): 1&3 per IPC/JEDEC standard: J−STD−020A.
3. The maximum package power dissipation limit must not be exceeded.
PD +
NOTE:
TJ(max) * TA
RqJA
This device is ESD sensitive. Use standard ESD precautions when handling.
http://onsemi.com
5
NCP5358
ELECTRICAL CHARACTERISTICS (VCC = 12 V, TA = 0°C to 85°C, VEN = 5 V, unless other noted.)
Symbol
Characteristics
Test Conditions
Min
Typ
Max
Units
SUPPLY VOLTAGE
VCC Operating Voltage
VCC
10
−
13.2
V
Power ON Reset Threshold
VPOR
−
3.2
−
V
SUPPLY CURRENT
VCCP Quiescent Supply Current in Normal
Operation
IVCCP_NORM
EN = 5 V, PWM1 = PWM2 = OSC,
FSW = 100 K, duty cycle = 50%.
CLOAD = 0 p
1.5
4
mA
VCC Quiescent Supply Current in Normal
Operation
IVCC_NORM
EN = 5 V, PWM1 = PWM2 = OSC,
FSW = 100 K, duty cycle = 50%.
CLOAD = 0 p
1.5
2.5
mA
VCCP Standby Current
IVCCP_SBC
EN = GND; No switching
−
0.1
0.5
mA
VCC Standby Current
IVCC_SBC
EN = GND; No switching
−
0.9
1.5
mA
mA
BST1 Quiescent Supply Current in Normal
Operation
IBST1_normal
PWM1 = +5 V
1.0
1.5
IBST1_normal
PWM1 = GND
1.0
1.5
BST2 Quiescent Supply Current in Normal
Operation
IBST2_normal
PWM2 = +5 V
1.0
1.5
IBST2_normal
PWM2 = GND
1.0
1.5
IBST1_SD
PWM1 = +5 V
0.25
IBST1_SD
PWM1 = GND
0.25
IBST2_SD
PWM2 = +5 V
0.25
IBST2_SD
PWM2 = GND
0.25
BST1 Standby Current
BST2 Standby Current
mA
mA
mA
UNDER VOLTAGE LOCKOUT
VCCP Start Threshold
VCCPTH
VCCP UVLO Hysteresis
VCCPHYS
VCC Start Threshold
VCCTH
VCC UVLO Hysteresis
VCCHYS
8.2
8.7
9.5
1.0
8.2
8.7
V
V
9.5
1.0
V
V
Output Overvoltage Trip Threshold
at channel 1 Startup
OVP1_SU
Power Startup time, VCC > 9 V.
(Without trimming)
1.8
2.0
V
Output Overvoltage Trip Threshold
at channel 2 Startup
OVP2_SU
Power Startup time, VCC > 9 V.
(Without trimming)
1.8
2.0
V
EN INPUT
Input Voltage High
VEN_HI
2.0
V
Input Voltage Low
VEN_LOW
Hysteresis (Note 6)
VEN_HYS
Enable Pin Sink Current
IEN_SINK
Propagation Delay Time (Note 6)
TpdhEN
20
60
ns
TpdlEN
20
60
ns
1.5
1.6
V
1.0
500
VCC = 5.5 V
V
mV
5.0
mA
PWM INPUT
PWM Input Self Bias Voltage
DRVH Comparator Rise Threshold
DRVL Comparator Rise Threshold
CH1
VPWM1
CH2
VPWM2
CH1
VTH_DRVH1
CH2
VTH_DRVH2
CH1
VTH_DRVL1
CH2
VTH_DRVL2
1.4
2.2
V
0.8
http://onsemi.com
6
V
NCP5358
ELECTRICAL CHARACTERISTICS (VCC = 12 V, TA = 0°C to 85°C, VEN = 5 V, unless other noted.)
Characteristics
Symbol
Test Conditions
Min
Typ
Max
Units
PWM INPUT
Input Current
CH1
IPWM1
PWM1 = 0 V, EN = GND
CH2
IPWM2
PWM2 = 0 V, EN = GND
CH1
RH_TG1
VBST1 – VSW1 = 12 V
CH2
RH_TG2
VBST2 – VSW2 = 12 V
CH1
RH_TG1
VBST1 – VSW1 = 12 V
CH2
RH_TG2
VBST2 – VSW2 = 12 V
CH1
TrDRVH1
30
mA
HIGH SIDE DRIVER
Output Resistance, Sourcing
Output Resistance, Sinking
Transition Time (Note 6)
CH2
Propagation Delay (Notes 5 & 6)
CH1
CH2
2.0
3.5
Ohms
1.0
2.5
Ohms
CLOAD = 3 nF, VBST1 – VSW1 = 12 V
16
25
ns
TfDRVH1
CLOAD = 3 nF, VBST1 – VSW1 = 12 V
11
15
TrDRVH2
CLOAD = 3 nF, VBST2 – VSW2 = 12 V
16
25
TfDRVH2
CLOAD = 3 nF, VBST2 – VSW2 = 12 V
11
15
TpdhDRVH1
Driving High, CLOAD = 3 nF
10
40
TpdlDRVH1
Driving Low, CLOAD = 3 nF
10
40
TpdhDRVH2
Driving High, CLOAD = 3 nF
10
30
TpdlDRVH2
Driving Low, CLOAD = 3 nF
10
30
ns
LOW SIDE DRIVER
Output Resistance, Sourcing
Output Resistance, Sinking
Transition Time (Note 6)
Ohms
1.0
2.5
Ohms
CLOAD = 3 nF
16
25
ns
TfDRVL1
CLOAD = 3 nF
11
15
TrDRVL2
CLOAD = 3 nF
16
25
TfDRVL2
CLOAD = 3 nF
11
15
SW = GND
CH2
RH_BG2
SW = GND
CH1
RL_BG1
SW = VCC
CH2
RL_BG2
SW = VCC
CH1
TrDRVL1
CH1
CH2
Negative Current Detector Threshold
3.5
RH_BG1
CH2
Propagation Delay (Notes 5 & 6)
2.0
CH1
TpdhDRVL1
Driving High, CLOAD = 3 nF
10
40
TpdlDRVL1
Driving Low, CLOAD = 3 nF
10
40
TpdhDRVL2
Driving High, CLOAD = 3 nF
10
30
TpdlDRVL2
Driving Low, CLOAD = 3 nF
10
30
CH1
VNCDT1
(Note 4)
CH2
VNCDT2
(Note 4)
Tsd
(Note 6)
Tsdhys
(Note 6)
−1.0
ns
mV
THERMAL SHUTDOWN
Thermal Shutdown
Thermal Shutdown Hysteresis
4. Design guaranteed
5. For propagation delays, “tpdh” refers to the specified signal going high “tpdl” refers to it going low.
6. Guaranteed by design; not tested in production
http://onsemi.com
7
150
170
20
−
°C
°C
NCP5358
Table 1. Decoder Truth Table:
PWM 1 or PWM 2 Input
ZCD
DRVL
DRVH
X
Low
High
Greater than 1.0 V, but less than 2.0 V
High (current through MOSFET is greater than 0)
High
Low
Greater than 1.0 V, but less than 2.0 V
Low (current through MOSFET is less than 0)
Low
Low
X
High
Low
Greater than 2.0 V
Less than 1.0 V
Application Information
IN
tpdlDRVL
tfDRVL
90%
DRVL
2V
90%
10%
10%
tpdhDRVH
trDRVH
tpdlDRVH
90%
trDRVL
tfDRVH
90%
DRVH−SW
10%
2V
10%
tpdhDRVL
SW
PWM
DRVH−SW
DRVL
IL
Figure 3. Timing Diagram
http://onsemi.com
8
NCP5358
Power ON Reset
The NCP5358 gate driver is a dual phase MOSFET driver,
each phase designed for driving two N−channel MOSFETs
in a synchronous buck converter topology. This driver is
compatible with the Signal channel NCP5359 gate drive.
This gate drives has a Bi−direction fault detection and
multi−level PWM input feature. When the gate driver works
with ON’s NCP539X controller, it can provide a difference
output logic status through multi−level PWM input. For this
new feature, higher efficiency can be provided. For the
bi−direction fault detection function, it is used to provide a
driver state information to other gate drivers and controller
in a multi−phase buck converter. e.g over voltage protection
(OVP) function at startup, thermal shutdown and under
voltage lockout (UVLO). This feature can provide an
additional protection function for the multi−phase system
when the fault condition occurs in one channel. With this
additional feature, converter overall system will be more
reliable and safe.
Power on reset feature is used to protect a gate driver avoid
abnormal status driving the start up condition. When the
initial soft start voltage VCC is higher than 3.2 V, the gate
driver will monitor the switching node SW pin. If SW1 or
SW2 pin high than 1.9 V, bottom gate will be force to high
for discharge the output capacitor. The fault mode will be
latch and EN pin will force both channel to be low, unless the
driver is recycle. When input voltage is higher than 9 V, the
gate driver will normal operation, top gate driver DRVH and
bottom gate driver will follow the PWM signal decode to a
status.
Adaptive Non−overlap
The non−overlap dead time control is used to avoid the
shoot through damage the power MOSFETs. When the
PWM signal pull high, DRVL will go low after a
propagation delay, the controller will monitors the switching
node (SW) pin voltage and the gate voltage of the MOSFET
to know the status of the MOSFET. When the low side
MOSFET status is off an internal timer will delay turn on of
the high−side MOSFET. When the PWM pull low, gate
DRVH will go low after the propagation delay (tpdDRVH).
The time to turn off the high side MOSFET is depending on
the total gate charge of the high−side MOSFET. A timer will
be triggered once the high side MOSFET is turn off to delay
the turn on the low−side MOSFET.
Enable Pin
The bi−direction enable pin is connected with an open
drain MOSFET. This pin is controlled by internal or external
signal. There are three conditions will be triggered:
1. The voltage at SW1 or SW2 pin is higher than
preset voltage at power start up.
2. The controller hits the UVLO at VCC pin or VCCP
pin.
3. The controller hits the thermal shutdown.
When the internal fault has been detected, EN pin will be
pull low. In this case, both channel drive output DRVH and
DRVL will be forced low, until the fault mode remove then
restart automatic.
Layout Guidelines
Layout is very important thing for design a DC−DC
converter. Bootstrap capacitor and VCC capacitor are most
critical items, it should be placed as close as to the driver IC.
Another item is using a GND plane. Ground plane can
provide a good return path for gate drives for reducing the
ground noise. Therefore GND pin should be directly
connected to the ground plane and close to the low−side
MOSFET source pin in every channel. Also, the gate drive
trace should be considered. The gate drives has a high di/dt
when switching, therefore a minimized gate drives trace can
reduce the di/dv, raise and fall time for reduce the switching
loss.
Under Voltage Lockout
The DRVH1, DRVH2 and DRVL1, DRVL2 are held low
until VCC or VCCP reaches 9 V during startup. The PWM
signals will control the gate status when VCC threshold is
exceeded. If VCC decreases to 3.2 V below the threshold, the
output gate will be forced low until input voltage VCC rises
above the startup threshold.
http://onsemi.com
9
NCP5358
PACKAGE DIMENSIONS
16 PIN QFN
CASE 485D−01
ISSUE O
−X−
A
M
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND 0.30 MM
FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD
AS WELL AS THE TERMINALS.
N
B
0.25 (0.010) T
0.25 (0.010) T
R
J
C
0.08 (0.003) T
−T−
K
SEATING
PLANE
E
H
G
L
5
8
4
9
1
12
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
MILLIMETERS
MIN
MAX
4.00 BSC
4.00 BSC
0.80
1.00
0.23
0.35
2.75
2.85
2.75
2.85
0.65 BSC
1.38
1.43
0.20 REF
0.00
0.05
0.35
0.45
2.00 BSC
2.00 BSC
1.38
1.43
0.60
0.80
INCHES
MIN
MAX
0.157 BSC
0.157 BSC
0.031
0.039
0.009
0.014
0.108
0.112
0.108
0.112
0.026 BSC
0.054
0.056
0.008 REF
0.000
0.002
0.014
0.018
0.079 BSC
0.079 BSC
0.054
0.056
0.024
0.031
F
16
D
13
NOTE 3
0.10 (0.004)
M
P
T X Y
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
10
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCP5358/D
工商网监
湘ICP备2023018690号
