NID5001N_06

NID5001N Self−Protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp. Features http://onsemi.com VDSS (Clamped) 42 V ID MAX (Limited) 33 A* RDS(ON) TYP 23 mW @ 10 V *Max current may be limited below this value depending on input conditions. Drain Overvoltage Protection MPWR • • • • • • • • • Low RDS(on) Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection Pb−Free Package is Available Gate Input RG ESD Protection Temperature Limit Current Limit Current Sense Source MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RGS = 1.0 MW) Gate−to−Source Voltage Drain Current − Continuous Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Thermal Resistance, Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 4.5 Apk, L = 120 mH, RG = 25 W) Operating and Storage Temperature Range Symbol VDSS VDGR VGS ID PD 64 1.0 1.56 RqJC RqJA RqJA EAS 1.95 120 80 1215 °C/W Value 42 42 "14 Unit Vdc Vdc Vdc DPAK CASE 369C STYLE 2 Y WW D5001N G = Year = Work Week = Device Code = Pb−Free Package 1 2 3 YWW D50 01NG MARKING DIAGRAM Internally Limited W 1 = Gate 2 = Drain 3 = Source ORDERING INFORMATION Device Package DPAK DPAK (Pb−Free) Shipping† 2500/Tape & Reel 2500/Tape & Reel mJ NID5001NT4 NID5001NT4G TJ, Tstg −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR4 PCB, steady state. 2. Mounted onto a 2″ square FR4 board (1″ square, 2 oz. Cu 0.06″ thick single−sided, t = steady state). †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 April, 2006 − Rev. 8 Publication Order Number: NID5001N/D NID5001N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient Static Drain−to−Source On−Resistance (Note 3) (VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 150°C) Static Drain−to−Source On−Resistance (Note 3) (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 150°C) Source−Drain Forward On Voltage (IS = 5 A, VGS = 0 V) SWITCHING CHARACTERISTICS Turn−on Time Turn−off Time Turn−on Time Turn−off Time Slew Rate On Slew−Rate Off VGS = 5.0 Vdc, VDD = 25 Vdc ID = 1.0 Adc, Ext RG = 2.5 W VGS = 10 Vdc, VDD = 25 Vdc, ID = 1.0 Adc, Ext RG = 2.5 W RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V T(on) T(off) T(on) T(off) −dVDS/dton dVDS/dtoff 32 68 11 86 0.5 0.35 40 75 15 95 V/ms V/ms ms VGS(th) 1.0 RDS(on) 23 43 RDS(on) 28 50 VSD 0.80 34 60 1.1 V 29 55 mW 1.8 5.0 2.0 Vdc −mV/°C mW V(BR)DSS 42 42 IDSS 1.5 6.5 IGSSF 50 5.0 100 mAdc 46 44 50 50 Vdc mAdc Symbol Min Typ Max Unit SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) Current Limit (VGS = 5.0 Vdc) VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C) (VGS = 10 Vdc) VDS = 10 V (VGS = 10 Vdc, TJ = 150°C) Temperature Limit (Turn−off) Temperature Limit (Circuit Reset) Temperature Limit (Turn−off) Temperature Limit (Circuit Reset) VGS = 5.0 Vdc VGS = 5.0 Vdc VGS = 10 Vdc VGS = 10 Vdc TLIM(off) TLIM(on) TLIM(off) TLIM(on) ILIM 21 12 29 13 150 135 150 135 30 19 41 24 175 160 165 150 36 30 49 31 200 185 185 170 °C °C °C °C Adc ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. ESD 4000 400 V http://onsemi.com 2 NID5001N TYPICAL PERFORMANCE CURVES 28 VGS = 10 V to 4.2 V ID, DRAIN CURRENT (AMPS) 24 20 16 12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 3.2 V 3.0 V 2.8 V 2.6 V 4V 3.6 V TJ = 25°C 3.4 V ID, DRAIN CURRENT (AMPS) 3.8 V 28 24 20 16 12 8 4 0 1 25°C 100°C 2 3 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 4 TC = −55°C VDS ≥ 10 V Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.2 ID = 5 A TJ = 25°C 0.035 Figure 2. Transfer Characteristics TJ = 25°C 0.03 VGS = 5 V 0.15 0.1 0.025 VGS = 10 V 0.02 0.05 0 2 5 4 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 3 10 0.015 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID = 5 A VGS = 10 V 1.4 IDSS, LEAKAGE (A) 10000 100000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V 1.2 TJ = 150°C 1000 TJ = 100°C 1 0.8 0.6 −50 100 10 −25 0 25 50 75 100 15 20 25 30 35 40 45 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NID5001N TYPICAL PERFORMANCE CURVES 0.14 IS, SOURCE CURRENT (AMPS) 0.12 0.1 0.08 0.06 0.04 0.02 0 0.3 0.01 0.4 0.5 0.6 0.7 0.8 0.9 0.1 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) VGS = 0 V TJ = 25°C 100 I D , DRAIN CURRENT (AMPS) VGS = 5 V SINGLE PULSE TC = 25°C Based upon a TJ = 100°C, Steady State. 10 dc 1.0 10 ms 1 ms 100 ms 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1.0 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Diode Forward Voltage vs. Current Figure 8. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NID5001N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O −T− B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T M SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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