NLAS2750MUTAG

NLAS2750 Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability www.onsemi.com The NLAS2750 is a dual SPDT low on−resistance analog switch. It can operate from a single 1.8 V to 5.0 V power supply. It is a bi−directional switch that can switch a negative voltage swing audio signal without requiring a coupling capacitor. With a single power supply, the audio signal can swing over the range from −2.5 V to VCC. MARKING DIAGRAM UQFN10 CASE 488AT Features 1 ALMG G • Capable to Switch Negative Swing Audio Signals Without Requiring a DC Blocking Capacitor AL M G • Low On−resistance (RON) • Low Voltage Digital Control Logic: • • • = Specific Device Code = Date Code/Assembly Location = Pb−Free Device (Note: Microdot may be in either location) (VINH = 1.4 V @ VCC = 2.7 V to 4.3 V) Low Power Consumption (ICC ≤ 250 nA) Space Saving 1.4 mm x 1.8 mm Package UQFN Package This is a Pb−Free Device NC2 GND 7 6 Typical Applications • Cellular Phones • Portable Media Players IN2 8 5 NC1 COM2 9 4 IN1 10 3 COM1 NO2 1 2 VCC NO1 FUNCTION TABLE IN1 (Pin 4) IN2 (Pin 8) Function 0 X COM1 = NC1 1 X COM1 = NO1 X 0 COM2 = NC2 X 1 COM2 = NO2 ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 3 1 Publication Order Number: NLAS2750/D NLAS2750 COM NO NC IN Figure 1. Logic Equivalent Circuit MAXIMUM RATINGS Symbol Parameter Value Unit −0.3 to +6.5 V Min. VIS = VCC − 6.5 V or −2.5 V (whichever is greater) Max. VIS = VCC + 0.3 V V −0.3 to +6.5 V 50 mA VCC Positive DC Supply Voltage VIS Analog Input Voltage (COM, NO, NC) (Notes 1 and 2) VIN Digital (IN1, IN2) ICC Current (GND, VCC) IIS Continuous Switch Current (COM, NO, NC) (Note 1) ±250 mA IISP Peak Switch Current (Pulsed at 1 ms, 10% Duty Cycle) ±500 mA −65 to +150 °C 200 mW TSTG PD VESD ILU Storage Temperature Power Dissipation ESD (Human Body Model) All pins I/O to GND kV 6 8 Latch−up (per JESD78) 300 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Signals on COM, NO, NC, exceeding VCC will be clamped by internal diodes. Limit forward diode current to maximum current ratings. 2. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum is used in this data sheet. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 1.8 5.5 V VCC Power Supply Range VIN Digital Select Input Voltage Overvoltage Tolerance (OVT) (IN1, IN2) GND 5.5 V VIS Analog Input Voltage (NC, NO, COM) (Note 3) −2.5 VCC V TA Operating Temperature Range −40 +85 °C tr, tf Input Rise or Fall Time (IN1, IN2) VCC < 2.7 V VCC ≥ 2.7 V ns/V 20 10 Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 3. The voltage across the switch should be ≤ 5.5 V. www.onsemi.com 2 NLAS2750 ELECTRICAL CHARACTERISTICS (VCC = 2.7 V, ±10%) (Note 4) Guaranteed Maximum Limit −405C to 855C Symbol Parameter Test Conditions Min Typ Max Unit ANALOG SWITCH VIS RDS(on) RON Analog Signal Range (Note 5) −2.5 On−Resistance On−Resistance Match RON Flatness On−Resistance Resistance Flatness INO/NC(off) Switch Off Leakage Current 0.6 VCC = 2.7 V, VIS = (VCC − 4.5 V), −1 V, 0 V 1 V, 2 V, VCC IIS = 100 mA VCC = 2.7 V, VNC/NO = −2.5 V or 2.5 V, VCOM = 2.5 V or −2.5 V ICOM(off) ICOM(on) Channel On Leakage Current VCC V 1.3  0.1  0.37  50 nA 50 ±250 nA ±250 nA DIGITAL CONTROL VINH Input Voltage High VCC = 5 V VCC = 2.7 V to 4.3 V VINL Input Voltage Low VCC = 2.7 V to 5 V CIN Input Capacitance IINL or IINH 1.6 1.4 V 0.6 5 Input Current VIN = 0 or VCC V pF ±1 A ±250 nA POWER CONSUMPTION ICC Maximum Quiescent Supply Current VCC = 2.7 V to 4.3 V 50 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Typical values are measured at 25°C and are for design aid only, not guaranteed nor subject to production testing. 5. Guaranteed by design, not subject to production testing. DYNAMIC CHARACTERISTICS (VCC = 2.7 V, ±10%) (Note 4) Guaranteed Maximum Limit −405C to 855C Symbol tBBM Parameter Test Conditions Break−Before−Make Time (Notes 6 and 7) tON(EN) Enable Turn−On Time (Notes 6 and 7) tOFF(EN) Enable Turn−Off Time (Notes 6 and 7) VCC = 2.7 V, VIS = 1.5 V, RL = 50 , CL = 35 pF QINJ Charge Injection (Note 6) CL = 1 nF, RGEN = 0 , VGEN = 0 V OIRR Off−Isolation (Note 6) XTALK Crosstalk (Notes 6 and 8) BW CNC/NO(off) Bandwidth (Note 6) Min Typ 1000 1250 Max Unit ns 80 150 ns 110 130 ns 60 pC VCC = 2.7 V, RL = 50 , CL = 5 pF, f = 300 kHz −58 dB −61 dB VCC = 2.7 V, RL = 50 , −3 dB 44 MHz 25 pF 75 pF Channel−Off Capacitance (Note 6) VCC = 2.7 V, f = 1 MHz CCOM/NC/NO(on) Channel−On Capacitance (Note 6) 6. Guaranteed by design, not subject to production testing. 7. VIS = input voltage to perform proper function. 8. Crosstalk Measured between channels. www.onsemi.com 3 NLAS2750 TYPICAL CHARACTERISTICS 2 1.2 1.8 1.1 1.6 1 RON, ON RESISTANCE () RON, ON RESISTANCE () (25°C, unless otherwise specified) 1.4 1.2 +85°C 1 0.8 +25°C −40°C 0.6 0.4 VCC = 2 V ION = 100 mA 0.2 0 −2.5 −1.5 −0.5 0.5 1.5 +85°C 0.9 0.8 +25°C 0.7 −40°C 0.6 0.5 0.4 0.3 VCC = 2.7 V ION = 100 mA 0.2 0.1 −2.5 2.5 −1.5 VIS, ANALOG VOLTAGE (V) 2.5 1.1 +85°C 0.9 0.8 0.7 +25°C 0.6 −40°C 0.5 0.4 0.3 VCC = 3.6 V ION = 100 mA 0.2 −1.5 −0.5 0.5 1.5 RON, ON RESISTANCE () RON, ON RESISTANCE () 1.5 1.2 1.1 0.1 −2.5 0.5 VIS, ANALOG VOLTAGE (V) 1.2 1 −0.5 1 +85°C 0.9 0.8 0.7 +25°C 0.6 0.5 −40°C 0.4 0.3 VCC = 4.3 V ION = 100 mA 0.2 0.1 −2.5 2.5 VIS, ANALOG VOLTAGE (V) −1.5 −0.5 0.5 1.5 VIS, ANALOG VOLTAGE (V) Figure 2. On Resistance (RON) vs. Analog Input Voltage (VIS) www.onsemi.com 4 2.5 NLAS2750 TYPICAL CHARACTERISTICS (25°C, unless otherwise specified) 0 −1 GAIN (dB) −2 −3 −4 −5 −6 −7 −8 1.00E+05 1.00E+06 1.00E+07 1.00E+08 1.00E+09 FREQUENCY (Hz) Figure 3. Bandwidth Measurement − Gain vs. Frequency 0 OFF ISOLATION (dB) −10 −20 −30 −40 −50 −60 −70 −80 1.00E+05 1.00E+06 1.00E+07 1.00E+08 1.00E+09 FREQUENCY (Hz) Figure 4. Off Isolation Measurement 0 CROSS TALK (dB) −10 −20 −30 −40 −50 −60 −70 −80 1.00E+05 1.00E+06 1.00E+07 1.00E+08 FREQUENCY (Hz) Figure 5. Cross Talk Measurement www.onsemi.com 5 1.00E+09 NLAS2750 TEST CIRCUITS VCC DUT VIS Input Output GND VOUT 0.1 F 50  tBMM 35 pF 90% 90% of VOH Output Switch Select Pin GND Figure 6. tBBM (Time Break−Before−Make) VCC Input DUT VIS 0.1 F 50% Output VOUT Open 50% 0V 50  VOH 90% 35 pF 90% Output VOL Input tON tOFF Figure 7. tON/tOFF VCC VCC Input DUT Output 50  50% 0V VOUT Open 50% VOH 35 pF Output Input tOFF Figure 8. tON/tOFF www.onsemi.com 6 10% 10% VOL tON NLAS2750 50  DUT Reference Transmitted Input Output 50  Generator 50  Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. ǒVVOUT Ǔ for VIN at 100 kHz IN VOUT Ǔ for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Logǒ VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50  Figure 9. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off VIN On Off VOUT Figure 10. Charge Injection: (Q) ORDERING INFORMATION Device NLAS2750MUTAG Package Shipping† UQFN10 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UQFN10 1.4x1.8, 0.4P CASE 488AT−01 ISSUE A DATE 01 AUG 2007 1 SCALE 5:1 EDGE OF PACKAGE D ÉÉÉ ÉÉÉ ÉÉÉ PIN 1 REFERENCE 2X 2X A 0.10 C L1 E 0.10 C B TOP VIEW A1 0.05 C A1 C SIDE VIEW 3 9X EXPOSED Cu A 0.05 C 10X DETAIL A Bottom View (Optional) 5 ÉÉÉ ÉÉÉ SEATING PLANE DETAIL B Side View (Optional) 6 e 1 10 10 X L3 b A3 DIM A A1 A3 b D E e L L1 L3 MILLIMETERS MIN MAX 0.45 0.60 0.00 0.05 0.127 REF 0.15 0.25 1.40 BSC 1.80 BSC 0.40 BSC 0.30 0.50 0.00 0.15 0.40 0.60 GENERIC MARKING DIAGRAM* XXMG G e/2 L MOLD CMPD NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.10 C A B 0.05 C *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. NOTE 3 BOTTOM VIEW MOUNTING FOOTPRINT 1.700 0.0669 0.663 0.0261 0.200 0.0079 9X 0.563 0.0221 1 2.100 0.0827 0.400 0.0157 PITCH DOCUMENT NUMBER: DESCRIPTION: 10 X 0.225 0.0089 SCALE 20:1 98AON22493D mm Ǔ ǒinches Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 10 PIN UQFN, 1.4 X 1.8, 0.4P PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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