NSS1C201MZ4

NSS1C201MZ4 100 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Feature http://onsemi.com 100 VOLTS, 2.0 AMPS NPN LOW VCE(sat) TRANSISTOR COLLECTOR 3 1 BASE 2 EMITTER • These are Pb−Free Devices MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Symbol VCEO VCBO VEBO IC ICM Max 100 140 7.0 2.0 3.0 Unit Vdc Vdc Vdc A A A Y W 1C201 G MARKING DIAGRAM SOT−223 CASE 318E STYLE 1 AYW 1C201G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range Symbol PD (Note 1) Max 800 6.5 RqJA (Note 1) PD (Note 2) 155 2 15.6 RqJA (Note 2) PDsingle (Note 3) TJ, Tstg 64 710 −55 to +150 Unit mW mW/°C °C/W W mW/°C °C/W mW °C = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package PIN ASSIGNMENT 4 C B 1 C 2 E 3 Top View Pinout ORDERING INFORMATION Device NSS1C201MZ4T1G NSS1C201MZ4T3G Package SOT−223 (Pb−Free) SOT−223 (Pb−Free) Shipping† 1000/ Tape & Reel 4000/ Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 4 @ 7.6 mm2, 1 oz. copper traces. 2. FR− 4 @ 645 mm2, 1 oz. copper traces. 3. Thermal response. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS1C201MZ4/D © Semiconductor Components Industries, LLC, 2008 November, 2008 − Rev. 0 1 NSS1C201MZ4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 140 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 4) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector − Emitter Saturation Voltage (Note 4) (IC = 0.1 A, IB = 0.010 A) (IC = 0.5 A, IB = 0.050 A) (IC = 1.0 A, IB = 0.100 A) (IC = 2.0 A, IB = 0.200 A) Base − Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.100 A) Base − Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. hFE 150 120 80 40 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 100 140 7.0 100 50 Vdc Vdc Vdc nA nA Symbol Min Typ Max Unit 360 VCE(sat) V 0.030 0.060 0.100 0.180 V 1.10 0.850 100 305 22 V MHz pF pF VBE(sat) VBE(on) fT Cibo Cobo http://onsemi.com 2 NSS1C201MZ4 0.60 PD, POWER DISSIPATINO (W) 0.50 0.40 0.30 0.20 0.10 0 0 20 40 60 80 100 120 140 Note 2 400 360 hRE, DC CURRENT GAIN 320 280 240 200 160 120 80 40 160 0 0.001 0.01 0.1 1 10 −55°C 25°C 150°C VCE = 2 V Note 1 TJ, TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 1. Power Derating 400 320 280 240 200 160 120 80 40 0 0.001 0.01 0.1 1 −55°C 25°C 150°C VBE(sat), COLLECTOR−EMITTER SATURATOIN VOLTAGE (V) 360 hRE, DC CURRENT GAIN VCE = 4 V 1 IC /IB = 10 Figure 2. DC Current Gain 0.1 150°C 25°C −55°C 10 0.01 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. Collector−Emitter Saturation Voltage 1 VCE(sat), COLLECTOR−EMITTER SATURATOIN VOLTAGE (V) IC /IB = 20 VBE(sat), BASE−EMITTER SATURATOIN VOLTAGE (V) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 150°C IC /IB = 10 150°C 25°C −55°C 0.1 25°C −55°C 0.01 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Collector−Emitter Saturation Voltage Figure 6. Base−Emitter Saturation Voltage http://onsemi.com 3 NSS1C201MZ4 1.4 VBE(sat), BASE−EMITTER SATURATOIN VOLTAGE (V) 1.2 1 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 150°C VBE(on), BASE−EMITTER VOLTAGE (V) IC /IB = 50 −55°C 25°C 1.2 VCE = 2 V 1.0 0.8 0.6 0.4 0.2 0.0 0.001 150°C −55°C 25°C 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Base−Emitter Saturation Voltage 1.00 VCE(sat), COLLECTOR−EMITTER SATURATOIN VOLTAGE (V) CIB, INPUT CAPACITANCE (pF) 0.5 A 1A IC = 0.1 A 0.10 2A 3A 400 350 300 250 200 150 100 50 0 0 1 Figure 8. Base−Emitter Voltage TJ = 25°C fTEST = 1 MHz TJ = 25°C 0.01 0.0001 0.001 0.01 0.1 1 2 3 4 5 6 7 8 IB, BASE CURRENT (A) VEB, BASE−EMITTER VOLTAGE (V) Figure 9. Collector Saturation Region Figure 10. Input Capacitance 50 COB, OUTPUT CAPACITANCE (pF) 45 40 35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 70 80 90 TJ = 25°C fTEST = 1 MHz fTau, CURRENT GAIN BANDWIDTH (MHz) 120 100 80 60 40 20 0 0.001 TJ = 25°C fTEST = 1 MHz VCE = 5 V 100 0.01 0.1 1 10 VCB, COLLECTOR BASE VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 11. Output Capacitance Figure 12. Current Gain Bandwidth Product http://onsemi.com 4 NSS1C201MZ4 10 IC, COLLECTOR CURRENT (A) 10 mS 1 Thermal Limit 0.1 100 mS 1 mS 0.01 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 13. Safe Operating Area http://onsemi.com 5 NSS1C201MZ4 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b b1 c D E e e1 L1 HE MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 1 0° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 1 0° 4 HE E 1 2 3 e1 b e A q L1 C q 0.08 (0003) A1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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