NTD5862N-1G

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Other names and brands may be claimed as the property of others. NTD5862N, NTP5862N MOSFET – Power, N-Channel 60 V, 98 A, 5.7 mW Features • • • • www.onsemi.com Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 60 V 5.7 mW @ 10 V 98 A D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms) VGS ±30 V Parameter TC = 25°C Steady State Pulsed Drain Current 4 4 ID TC = 100°C TC = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (L = 0.3 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) A 98 4 69 PD 115 W IDM 335 A TJ, Tstg −55 to 175 °C IS 96 A EAS 205 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 1.3 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 37 1. Limited by package to 50 A continuous. 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces. 1 2 1 3 2 1 3 IPAK CASE 369D STYLE 2 DPAK CASE 369C STYLE 2 2 3 TO−220 CASE 221A STYLE 5 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain 4 Drain 4 Drain AYWW 58 62NG Power Dissipation (RqJC) S AYWW 58 62NG Continuous Drain Current (RqJC) (Note 1) N−Channel G 2 1 Drain 3 Gate Source NTP 5862NG AYWW 1 Gate 1 2 3 Gate Drain Source A Y WW 5862N G 3 Source 2 Drain = Assembly Location* = Year = Work Week = Device Code = Pb−Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 May, 2019 − Rev. 4 1 Publication Order Number: NTD5862N/D NTD5862N, NTP5862N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current 47 IDSS Gate−to−Source Leakage Current V VGS = 0 V, VDS = 60 V mV/°C TJ = 25°C 1.0 TJ = 150°C 100 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 4.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance 2.0 −9.7 RDS(on) VGS = 10 V, ID = 45 A 4.4 gFS VDS = 15 V, ID = 10 A 18 mV/°C 5.7 mW S CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 5050 6000 VGS = 0 V, f = 1.0 MHz, VDS = 25 V 500 600 300 420 VGS = 10 V, VDS = 48 V, ID = 45 A pF nC Total Gate Charge QG(TOT) 82 Threshold Gate Charge QG(TH) 5.2 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 27 RG 0.6 W td(on) 18 ns tr 70 Gate Resistance 24 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(off) VGS = 10 V, VDD = 48 V, ID = 45 A, RG = 2.5 W tf 35 60 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 45 A TJ = 25°C 0.9 TJ = 100°C 0.75 38 VGS = 0 V, dIs/dt = 100 A/ms, IS = 45 A QRR 1.2 V ns 20 18 40 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTD5862N, NTP5862N TYPICAL CHARACTERISTICS 200 TJ = 25°C VGS = 10 V 160 6.0 V 120 5.8 V 5.6 V 80 40 VDS ≥ 5 V 180 6.2 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 200 5.2 V 160 140 120 100 80 TJ = 25°C 60 40 20 0 1 2 3 4 5 5 6 7 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 45 A TJ = 25°C 0.020 0.015 0.010 0.005 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.006 VGS = 10 V TJ = 25°C 0.005 0.004 0.003 10 20 30 40 50 60 70 80 90 100 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current 100000 2.2 VGS = 0 V ID = 45 A VGS = 10 V 1.8 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 4 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.025 2.0 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.030 0.000 TJ = 125°C 0 3 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 1.6 TJ = 150°C 10000 1.4 1.2 1.0 TJ = 125°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 1000 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 60 NTD5862N, NTP5862N TYPICAL CHARACTERISTICS 6000 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 5000 10 VGS = 0 V TJ = 25°C Ciss 4000 3000 2000 Coss 1000 0 0 Crss 10 20 30 40 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 60 QT 9 8 7 6 Qgs 4 3 VDS = 48 V ID = 45 A TJ = 25°C 2 1 0 0 10 Figure 7. Capacitance Variation IS, SOURCE CURRENT (A) t, TIME (ns) 100 tr td(on) tf td(off) 10 1 1 10 100 90 VGS = 0 V TJ = 25°C 80 60 40 20 0 0.50 0.60 0.70 0.80 0.90 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage vs. Current 100 ms 10 ms 10 VGS = 10 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 ID = 37 A 200 AVALANCHE ENERGY (mJ) 1 ms 10 ms dc 0.1 1.10 RG, GATE RESISTANCE (W) 225 100 1.00 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 ID, DRAIN CURRENT (A) 80 100 VDD = 48 V ID = 45 A VGS = 10 V 0.1 20 30 40 50 60 70 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source vs. Total Charge 1000 1 Qgd 5 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 175 150 125 100 75 50 25 0 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE Figure 11. Maximum Rated Forward Biased Safe Operating Area 175 Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature www.onsemi.com 4 NTD5862N, NTP5862N TYPICAL CHARACTERISTICS RqJC(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (s) Figure 13. Thermal Response ORDERING INFORMATION Package Shipping† NTD5862N−1G IPAK (Straight Lead) (Pb−Free) 75 Units / Rail NTD5862NT4G DPAK (Pb−Free) 2500 / Tape & Reel NTP5862NG TO−220 (Pb−Free) 50 Units / Rail Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTD5862N, NTP5862N PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE DRAIN SOURCE DRAIN IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T www.onsemi.com 6 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− NTD5862N, NTP5862N PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE E A E b3 B c2 4 L3 D 1 L4 C A 2 3 NOTE 7 b2 e b TOP VIEW Z Z H DETAIL A c SIDE VIEW 0.005 (0.13) M BOTTOM VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW ALTERNATE CONSTRUCTION H C L2 GAUGE PLANE C L L1 DETAIL A SEATING PLANE A1 ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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