CPH5862

Ordering number : ENA0464 CPH5862 SANYO Semiconductors DATA SHEET CPH5862 Features • • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • DC / DC converter applications. Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • 2.5V drive. [SBD] • Short reverse recovery time. • Low forward voltage. • Low reverse current. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2✕0.8mm) 1unit 20 ±10 2 8 0.9 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : YQ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82907PE TI IM TCC-00000873 No. A0464-1/5 CPH5862 Continued from preceding page. Parameter [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 35 700 5 --55 to +125 --55 to +125 V V mA A °C °C Symbol Conditions Ratings Unit Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=300µA IF=700mA VR=15V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 30 0.55 80 25 10 V V µA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A IS=2A, VGS=0V 20 1 ±10 0.4 1.6 2.7 100 130 190 40 25 9 25 25 18 2.7 0.6 0.6 0.87 1.2 130 180 1.3 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm (typ) 7017A-005 2.9 0.15 Electrical Connection 5 4 3 5 4 3 0.2 2.8 1.6 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 1 2 0.6 Top view 0.6 1 0.95 2 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.9 0.2 No. A0464-2/5 CPH5862 Switching Time Test Circuit [MOSFET] 4V 0V VIN ID=1A RL=10Ω VOUT VIN VDD=10V trr Test Circuit [SBD] Duty≤10% 100mA D PW=10µs D.C.≤1% G 10µs --5V 100mA 50Ω 100Ω 10Ω P.G 50Ω S CPH5862 trr 2.0 ID -- VDS 3.0V 2.0 V [MOSFET] 3.0 ID -- VGS VDS=10V [MOSFET] 1.8 1.6 VGS=1.5V Drain Current, ID -- A 2.5 Drain Current, ID -- A 4.0V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2.5 V 2.0 6.0V 1.5 1.0 75 °C Ta = 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.4 0.8 IT02720 Drain-to-Source Voltage, VDS -- V [MOSFET] RDS(on) -- VGS 1.2 --2 5° C 25°C 1.6 10mA 2.0 IT02721 Gate-to-Source Voltage, VGS -- V 250 300 RDS(on) -- Ta [MOSFET] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 200 200 1.0A 150 150 ID=0.5A 100 100 0.5A , I D= 2.5V .0A = VGS .0V, I D=1 =4 VGS 50 50 0 0 1 2 3 4 5 6 7 8 9 10 IT02722 Gate-to-Source Voltage, VGS -- V [MOSFET] yfs -- ID 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 IT02723 10 IS -- VSD [MOSFET] VGS=0V Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS=10V = Ta 1.0 7 5 3 2 0.01 2 3 5 7 0.1 --2 5°C 75 °C Source Current, IS -- A C 25° 2 3 5 7 1.0 2 3 5 0 0.2 0.4 Ta=7 5°C 25°C --25°C 0.6 0.8 1.0 1.2 1.4 IT02725 Drain Current, ID -- A IT02724 Diode Forward Voltage, VSD -- V No. A0464-3/5 CPH5862 100 7 SW Time -- ID VDD=10V VGS=4V [MOSFET] 1000 7 5 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz Switching Time, SW Time -- ns 5 Ciss, Coss, Crss -- pF 3 2 td(off) 3 2 Ciss tf 10 7 5 3 2 td(on) tr 100 7 5 3 2 Coss Crss 1.0 0.1 10 2 3 5 7 1.0 2 3 5 IT02726 0 5 10 15 20 Drain Current, ID -- A 4 VGS -- Qg [MOSFET] 2 10 7 5 IT02727 Drain-to-Source Voltage, VDS -- V [MOSFET] ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=2A Drain Current, ID -- A 3 IDP=8A ID=2A DC PW≤10µs 1m s 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 10 op ms 0m ati s 2 er on 1 Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (1000mm2✕0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 2 3 5 7 10 2 3 0 0 1 2 3 IT02728 0.01 0.01 Total Gate Charge, Qg -- nC 1.2 PD -- Ta Drain-to-Source Voltage, VDS -- V IT11354 [MOSFET] Allowable Power Dissipation, PD -- W 1.0 0.9 0.8 M ou nte do na ce ram 0.6 ic bo ard (1 0.4 00 0m m2 ✕0 0.2 .8m m) 1u nit 160 IT11355 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 5 3 2 1.0 7 5 3 2 IF -- VF [SBD] 5 2 1000 IR -- VR 5°C Ta=12 [SBD] Reverse Current, IR -- µA Forward Current, IF -- A 5 2 100 5 2 10 5 2 1.0 5 2 0.1 0 100°C 75°C 50°C 25°C 25° C Ta= 1 0.1 7 5 3 2 0.01 0 25°C 0.2 0.4 0.6 0.8 1.0 ID00383 5 10 15 20 25 30 35 ID00384 Forward Voltage, VF -- V Reverse Voltage, VR -- V No. A0464-4/5 CPH5862 Average Forward Power Dissipation, PF(AV) -- W 0.8 PF(AV) -- IO (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° Rectangular wave [SBD] 2 C -- VR [SBD] f=1MHz Interterminal Capacitance, C -- pF 1.0 ID00385 100 7 5 0.6 (4) (3) (2) 0.4 θ 360° (1) 3 2 0.2 Sine wave 180° 10 7 5 1.0 2 3 5 7 10 2 3 5 ID00386 0 0 0.2 0.4 0.6 360° 0.8 Average Output Current, IO -- A 6 IFSM -- t IS Reverse Voltage, VR -- V [SBD] Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 5 4 20ms t 3 2 1 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s ID00387 Note on usage : Since the CPH5862 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice. PS No. A0464-5/5