NTS4101PT1G

NTS4101P Power MOSFET −20 V, −1.37 A, Single P−Channel, SC−70 Features • • • • Leading −20 V Trench for Low RDS(on) −2.5 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2x2 mm) Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) Typ 83 mW @ −4.5 V −20 V 88 mW @ −3.6 V 104 mW @ −2.5 V P−Channel MOSFET S −1.37 A ID Max Applications • High Side Load Switch • Charging Circuit • Single Cell Battery Applications such as: Cell Phones, Digital Cameras, PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State Steady State TA = 25°C TA = 70°C TA = 25°C PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID Value −20 ±8 −1.37 −0.62 0.329 −4.0 −55 to 150 −0.5 260 W A °C A °C 1 2 Units V V A G D tp = 10 ms MARKING DIAGRAM & PIN ASSIGNMENT 3 Operating Junction and Storage Temperature Source Current (Body Diode), Continuous Lead Temperature for Soldering Purposes (1/8” from case for 10 s) D 3 TT M G G 1 G S 2 SC−70/SOT−323 CASE 419 STYLE 8 TT M G THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Symbol RqJA Max 380 Units °C/W = Device Code = Date Code* = Pb−Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NTS4101PT1 NTS4101PT1G Package SOT−323 SOT−323 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 206 March, 2006 − Rev. 2 1 Publication Order Number: NTS4101P/D NTS4101P ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = −16 V TJ = 25°C TJ = 70°C VGS = 0 V, ID = −250 mA −20 −24.5 −13.7 −1.0 −5.0 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = ±8 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = −250 mA −0.45 −0.64 2.7 −1.5 V mV/°C VGS = −4.5 V, ID = −1.0 A VGS = −3.6 V, ID = −0.7 A VGS = −2.5 V, ID = −0.3 A 83 88 104 120 130 160 mW CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf VSD tRR Ta Tb QRR VGS = 0 V, IS = −0.3 A TJ = 25°C TJ = 125°C VGS = −4.5 V, VDD = −4.0 V, ID = −1.0 A, RG = 6.2 W 6.2 14.9 26 18 12 25 40 30 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = −4.5 V, VDS = −4.5 V, ID = −1.0 A VGS = 0 V, f = 1.0 MHz, VDS = −20 V 603 90 62 6.4 0.7 1.0 1.5 840 125 85 9.0 nC pF DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage −0.61 −0.5 10.9 7.1 3.8 4.25 nC 20 ns −1.2 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTS4101P TYPICAL CHARACTERISTICS 6 5 4 3 2 1 0 VGS = −4.5 V −3.5 V −3.0 V −2.5 V −2.2 V −2.0 V TJ = 25°C −1.8 V −ID, DRAIN CURRENT (A) 6 VDS w −10 V 5 4 3 2 1 0 TJ = 125°C TJ = 25°C TJ = −55°C 0 0.4 0.8 1.2 1.6 2.0 2.4 −VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A) −1.6 V −1.4 V −1.2 V −1.0 V 0 2 4 6 8 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.16 VGS = −4.5 V 0.12 TJ = 125°C 0.16 VGS = −3.6 V TJ = 125°C 0.12 TJ = 25°C 0.08 TJ = −55°C 0.04 0.08 TJ = 25°C TJ = −55°C 0.04 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 −ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Drain Current and Temperature RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) Figure 4. On−Resistance versus Drain Current and Temperature 1.5 ID = −1.0 A VGS = −4.5 V C, CAPACITANCE (pF) 1.3 1000 800 600 400 200 0 COSS CRSS −25 0 25 50 75 100 125 150 0 4 8 12 TJ = 25°C VGS = 0 V CISS 1.1 0.9 0.7 −50 16 20 TJ, JUNCTION TEMPERATURE (°C) −DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature http://onsemi.com 3 Figure 6. Capacitance Variation NTS4101P TYPICAL CHARACTERISTICS 5 QT 4 3 2 Q1 1 0 ID = −1.0 A TJ = 25°C 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Q2 VGS −IS, SOURCE CURRENT (A) −VGS, GATE−TO−SOURCE VOLTAGE (V) 3 VGS = 0 V 2 1 TJ = 125°C TJ = 25°C 0 0 0.2 0.4 0.6 0.8 1 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 7. Gate−to−Source and Drain−to−Source Voltage versus Total Charge Figure 8. Diode Forward Voltage versus Current http://onsemi.com 4 NTS4101P PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M D e1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 HE 1 2 E b e A 0.05 (0.002) A1 A2 L c DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 NTS4101P/D