NTS2101PT1G

NTS2101P Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70 Features • • • • Leading Trench Technology for Low RDS(on) Extending Battery Life −1.8 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2 x 2 mm) Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) Typ 65 mW @ −4.5 V −8.0 V 78 mW @ −2.5 V 117 mW @ −1.8 V −1.4 A ID Max Applications • High Side Load Switch • Charging Circuit • Single Cell Battery Applications such as Cell Phones, Digital Cameras, PDAs, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Pulsed Drain Current tp = 10 ms IDM TJ, TSTG IS TL TA = 25°C TA = 70°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value −8.0 ±8.0 −1.4 −1.1 −1.5 0.29 0.33 −3.0 −55 to 150 −0.46 260 A W Units V V A P−Channel MOSFET S G D MARKING DIAGRAM & PIN ASSIGNMENT 3 W A °C A °C TS M G 1 2 Drain 3 TS M G G 1 Gate 2 Source Operating Junction and Storage Temperature Source Current (Body Diode), Continuous Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) SC−70/SOT−323 CASE 419 STYLE 8 THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient − t ≤ 5 s (Note 1) Symbol RqJA RqJA Max 430 375 Units °C/W = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ORDERING INFORMATION Device NTS2101PT1 NTS2101PT1G Package SOT−323 SOT−323 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 March, 2006 − Rev. 1 Publication Order Number: NTS2101P/D NTS2101P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = −6.4 V TJ = 25°C TJ = 70°C VGS = 0 V, ID = −250 mA −8.0 −20 −10 −1.0 −5.0 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance IGSS VDS = 0 V, VGS = ±8.0 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = −250 mA −0.45 −0.7 2.6 V mV/°C 100 140 210 mW VGS = −4.5 V, ID = −1.0 A VGS = −2.5 V, ID = −0.5 A VGS = −1.8 V, ID = −0.3 A 65 78 117 CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = −4.5 V, VDD = −4.0 V, ID = −1.0 A, RG = 6.2 W 6.2 15 26 18 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = −5.0 V, VDD = −5.0 V, ID = −1.0 A VGS = 0 V, f = 1.0 MHz, VDS = −8.0 V 640 120 82 6.4 0.7 1.0 1.5 nC pF DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −0.3 A TJ = 25°C TJ = 125°C −0.62 −0.51 23.4 7.7 15.7 9.5 nC ns −1.2 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR Ta Tb QRR VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTS2101P TYPICAL ELECTRICAL CHARACTERISTICS 8.0 −ID, DRAIN CURRENT (AMPS) −2.2 V 6.0 VGS = −2.5 V to −4.5 V 4.0 −1.6 V −1.8 V TJ = 25°C −ID, DRAIN CURRENT (AMPS) −2.0 V 8.0 V w −10 V DS 6.0 4.0 2.0 −1.4 V −1.2 V −1.0 V 4.0 2.0 TJ = 125°C TJ = 25°C TJ = −55°C 0 0 1.0 2.0 3.0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.16 VGS = −4.5 V 0.12 TJ = 125°C 0.08 TJ = 25°C TJ = −55°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.16 Figure 2. Transfer Characteristics VGS = −2.5 V 0.12 TJ = 125°C TJ = 25°C 0.08 TJ = −55°C 0.04 0.04 0 0 2.0 4.0 6.0 8.0 0 0 2.0 4.0 6.0 8.0 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature 1.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID = −1.0 A VGS = −4.5 V 1.3 C, CAPACITANCE (pF) 800 1000 Figure 4. On−Resistance vs. Drain Current and Temperature TJ = 25°C VGS = 0 V CISS 600 1.1 400 COSS 200 CRSS 0.9 0.7 −50 −25 0 25 50 75 100 125 150 0 0 2 4 6 8 TJ, JUNCTION TEMPERATURE (°C) DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTS2101P TYPICAL ELECTRICAL CHARACTERISTICS −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 5 −IS, SOURCE CURRENT (AMPS) QT 4 4.0 VGS = 0 V 3.0 3 QGS QGD 2.0 TJ = 125°C 1.0 TJ = 25°C 0 2 1 0 0 VDS = −5.0 A ID = −1.0 A TA = 25°C 2.0 4.0 6.0 QG, TOTAL GATE CHARGE (nC) 8.0 0 0.2 0.4 0.6 0.8 1.0 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Gate Charge Figure 8. Diode Forward Voltage vs. Current http://onsemi.com 4 NTS2101P PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M D e1 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 HE 1 2 E b e A 0.05 (0.002) A2 L c DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 2.00 0.079 0.095 A1 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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