NTS2101PT1G-VB

NTS2101PT1G www.VBsemi.com P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)c 0.080 at VGS = - 4.5 V - 3.1 0.100 at VGS = - 2.5 V - 2.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4.3 nC APPLICATIONS • Load Switch • DC/DC Converters S SOT-323 SC-70 G 1 G 3 S D 2 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C - 3.1 TC = 70 °C - 2.1 TA = 25 °C ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C Soldering Recommendations (Peak Temperature) A -6 - 0.4 - 0.3 0.5 PD 0.3 0.4a, b W 0.3a, b TA = 70 °C Operating Junction and Storage Temperature Range V - 1.4a, b - 1.1a, b TA = 70 °C Unit TJ, Tstg - 50 to 150 260 °C Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Based on TC = 25 °C. 服务热线：400-655-8788 1 NTS2101PT1G www.VBsemi.com THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 360 °C/W. Symbol Typical Maximum t 10 s RthJA 250 300 Steady State RthJF 225 270 Unit °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Symbol VGS(th)/TJ ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS a On-State Drain Current Drain-Source On-State Resistancea ID(on) RDS(on) Forward Transconductancea Dynamicb gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current tr Max. mV/°C 2.4 - 0.45 - 1.5 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 - 10 VDS  - 5 V, VGS = - 4.5 V -2 0.080 VGS = - 2.5 V, ID = - 1.2 A 0.120 VGS = - 1.8 V, ID = - 0.3 A 0.140 VDS = - 5 V, ID = - 1.4 A 5  S 272 VDS = - 10 V, VGS = 0 V, f = 1 MHz 55 pF 44 VDS = - 10 V, VGS = - 4.5 V, ID = - 1.4 A VDS = - 10 V, VGS = - 2.5 V, ID = - 1.4 A 4.3 6.5 2.7 4.1 0.7 VDD = - 10 V, RL = 9.1  ID  - 1.1 A, VGEN = - 4.5 V, Rg = 1  1.4 7 14 12 20 20 30 35 9 18 td(on) 5 10 10 20 VDD = - 10 V, RL = 9.1  ID  - 1.1 A, VGEN = - 8 V, Rg = 1  tf IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. nC 1.0 f = 1 MHz tf tr µA A VGS = - 4.5 V, ID = - 1.4 A 23 td(off) Unit V - 14 VDS = - 20 V, VGS = 0 V, TJ = 55 °C td(on) td(off) Typ. 18 27 7 14 - 2.4 TC = 25 °C -6 IF = - 0.7 A IF = - 0.7 A, dI/dt = 100 A/µs, TJ = 25 °C  ns A - 0.8 - 1.2 V 18 27 ns 7 14 nC 7 11 ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 NTS2101PT1G www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6.0 1.0 V GS = 5 V th r u 3 V V GS = 2 . 5 V 0.8 ID - Drain Current (A) ID - Drain Current (A) 4.5 V GS = 2V 3.0 V GS = 1.5 V 0.6 0.4 T C = 25 °C 1.5 0.2 T C = 125 °C V GS = 1 V 0.0 0.0 0.5 1.0 1.5 2.0 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.15 1.5 600 0.13 V GS = 1.8 V 450 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) T C = - 55 °C 0.0 0.0 0.11 V GS = 2.5 V 0.09 V GS = 4.5 V Ciss 300 150 0.07 Coss Crss 0.05 0 0.0 1.5 3.0 4.5 0 6.0 5 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 1.5 4.5 ID = 1.4 A 1.4 ID = 1.4 A V GS = 2.5 V 3.6 V DS = 10 V 2.7 V DS = 5 V V DS = 16 V 1.8 1.3 (Normalized) RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 V GS = 4.5 V 1.2 1.1 1.0 0.9 0.9 0.8 0.0 0 1 2 3 4 5 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 服务热线：400-655-8788 3 NTS2101PT1G www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.32 ID = 1.4 A T J = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 T J = 25 °C 1 0.24 T J = 125 °C 0.16 T J = 25 °C 0.08 0.00 0.1 0.3 0.0 0.6 0.9 1.2 1 1.5 2 4 3 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.75 10 0.65 8 0.55 Power (W) VGS(th) (V) ID = 250 μA 0.45 0.35 0.25 - 50 6 4 2 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 10 Limited by RDS(on)* ID - Drain Current (A) 100 μs 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse 100 ms BVDSS Limited 0.01 0.1 1s 10 s, DC 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 4 NTS2101PT1G www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.6 ID - Drain Current (A) 1.2 0.8 0.4 0.0 25 0 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 0.6 0.45 0.5 0.36 Power (W) Power (W) 0.4 0.3 0.27 0.18 0.2 0.09 0.1 0.0 0.00 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 NTS2101PT1G www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 360 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 6 NTS2101PT1G SCĆ70: www.VBsemi.com 3ĆLEADS MILLIMETERS 3 E1 E 1 2 e b e1 D c A2 A L 0.08 c A1 Dim A A1 A2 b c D E E1 e e1 L INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.25 – 0.40 0.010 – 0.016 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. C, 09-Jul-01 DWG: 5549 服务热线：400-655-8788 7 NTS2101PT1G www.VBsemi.com 0.045 (1.143) (0.648) 0.022 (0.559) 0.026 0.025 (0.622) (2.438) 0.096 RECOMMENDED MINIMUM PADS FOR SC-70: 3-Lead 0.027 (0.686) 0.071 (1.803) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 8 NTS2101PT1G www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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