NTS4173PT1G

NTS4173P Power MOSFET −30 V, −1.3 A, Single P−Channel, SC−70 Features • • • • • −30 V BVds, Low RDS(on) in SC−70 Package Low Threshold Voltage Fast Switching Speed This is a Halide−Free Device This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(on) MAX 150 mW @ −10 V −30 V 200 mW @ −4.5 V 280 mW @ −2.5 V ID MAX −1.2 A −1.0 A −0.9 A Applications • Load Switch • Low Current Inverter and DC−DC Converters • Power Switch for Printers, Communication Equipment MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Pulsed Drain Current tp = 10 ms IDM TJ, Tstg IS TL TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD 0.35 −5.0 −55 to 150 −1.0 260 A °C A °C ID Symbol VDSS VGS Value −30 ±12 −1.2 −0.80 −1.3 0.29 W A Unit V V SC−70/SOT−323 (3 LEADS) S G D 3 1 2 SC−70/SOT−323 CASE 419 STYLE 8 MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain TGMG G 1 Gate 2 Source Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TG = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − t ≤ 5 s (Note 1) Symbol RqJA RqJA Max 425 360 Unit °C/W ORDERING INFORMATION Device NTS4173PT1G Package SC−70 (Pb−Free) Shipping† 3000/Tape & Reel 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. * Date code orientation may vary depending upon manufacturing location © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 0 1 Publication Order Number: NTS4173P/D NTS4173P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain−to−Source On−Resistance VGS(TH) RDS(on) VGS = VDS, ID = −250 mA VGS = −10 V, ID = −1.2 A VGS = −4.5 V, ID = −1.0 A VGS = −2.5 V, ID = −0.9 A Forward Transconductance gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD td(on) tr td(off) tf td(on) tr td(off) tf VSD tRR ta tb QRR VDS = 20 V, VGS = 0 V, IS = −1.0 A, dISD/dt = 100 A/ms VGS = 0 V, IS = −1.0 A VGS = −10 V, VDS = −15 V, ID = −1.2 A, RG = 3 W VGS = −4.5 V, VDS = −15 V, ID = −1.2 A, RG = 3 W VGS = −10 V, VDS = −15 V, ID = −1.2 A VGS = −4.5 V, VDS = −15 V, ID = −1.2 A VGS = 0 V, f = 1.0 MHz, VDS = −15 V VDS = −5 V, ID = −1.2 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge 430 55 40 4.8 0.6 1.1 1.5 10.1 0.6 1.1 1.5 nC nC pF −0.7 −1.15 90 110 165 3.6 −1.5 150 200 280 S V mW V(BR)DSS IDSS IGSS VGS = 0 V, ID = −250 mA VGS = 0 V, VDS = −24 V, TJ = 25°C VGS = 0 V, VDS = −24 V, TJ = 85°C VDS = 0 V, VGS = "12 V −30 −1.0 −5.0 ±0.1 V mA mA Symbol Test Condition Min Typ Max Units SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 7.7 5.2 16.2 6.7 5.3 6.7 19.9 7.1 ns ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge −0.8 12 10 2.0 7.0 nC −1.0 V ns 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTS4173P TYPICAL CHARACTERISTICS 5.0 4.5 −ID, DRAIN CURRENT (A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 −2.0 V −1.8 V 2.5 3.0 −2.2 V −10 V −ID, DRAIN CURRENT (A) −4.5 V −3.0 V −2.6 V TJ = 25°C −2.4 V 4.0 3.0 2.0 TJ = 125°C 1.0 0 1.0 TJ = 25°C TJ = −55°C 1.25 1.5 1.75 2.0 2.25 2.5 2.75 3.0 −VGS, GATE−TO−SOURCE VOLTAGE (V) 5.0 VDS ≥ −10 V −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.30 0.25 0.20 0.15 0.10 0.05 TJ = 25°C ID = −1.2 A 0.30 Figure 2. Transfer Characteristics TJ = 25°C 0.25 VGS = −2.2 V 0.20 0.15 0.10 0.05 0.0 VGS = −10 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS = −2.5 V VGS = −4.5 V 2 3 4 5 6 7 8 9 10 −VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage 1.6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 150 1 0 VGS = −10 V ID = −1.2 A −IDSS, LEAKAGE (nA) 100 1000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage TJ = 150°C TJ = 125°C 10 TJ = 85°C 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTS4173P TYPICAL CHARACTERISTICS −VGS, GATE−TO−SOURCE VOLTAGE (V) 600 500 C, CAPACITANCE (pF) 400 300 200 100 0 Crss 0 5 10 15 20 25 30 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Coss Ciss VGS = 0 V TJ = 25°C f = 1 MHz 12 10 8 6 4 2 0 0 2 4 6 VDS VGS QT 16 14 12 10 8 6 Qgs Qgd VDS = −15 V ID = −1.2 A TJ = 25°C 8 10 4 2 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 100 tf tr 10 td(on) −IS, SOURCE CURRENT (A) VGS = −4.5 V VDD = −15 V ID = −1.2 A t, TIME (ns) td(off) Figure 8. Gate−to−Source Voltage vs. Total Charge 10 1.0 TJ = 150°C 125°C 25°C TJ = −55°C 1.0 1.0 10 RG, GATE RESISTANCE (W) 100 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance −VGS(th), GATE−TO−SOURCE VOLTAGE (V) 1.4 1.3 1.2 POWER (W) 1.1 1.0 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 ID = −250 mA 20 18 16 14 12 10 8 6 4 2 Figure 10. Diode Forward Voltage vs. Current 0 0.0001 0.001 0.01 0.1 1 10 SINGLE PULSE TIME (s) 100 1000 Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power Dissipation http://onsemi.com 4 NTS4173P TYPICAL PERFORMANCE CURVES 10 −ID, DRAIN CURRENT (A) 10 ms 1.0 100 ms VGS = −12 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 ms 10 ms 0.1 0.01 0.1 dc 100 10 1.0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area 1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) Single Pulse 0.01 0.0001 0.001 0.01 0.1 t, TIME (SECONDS) 1.0 10 100 1000 Figure 14. FET Thermal Response http://onsemi.com 5 NTS4173P PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M e1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 3 HE 1 2 E b e A 0.05 (0.002) A1 A2 L c DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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