NTB5426N, NTP5426N,
NVB5426N
Power MOSFET
120 Amps, 60 Volts
N-Channel D2PAK, TO-220
http://onsemi.com
Features
•
•
•
•
•
Low RDS(on)
High Current Capability
Avalanche Energy Specified
AEC Q101 Qualified − NVB5426N
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
60 V
120 A
6.0 mW @ 10 V
Applications
•
•
•
•
ID MAX
(Note 1)
RDS(ON) MAX
N−Channel
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
D
G
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
Gate−to−Source Voltage − Nonrepetitive
(TP < 10 ms)
VGS
30
V
ID
120
A
Continuous Drain
Current RqJC
(Note 1)
Steady
State
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
TC = 100°C
215
W
IDM
260
A
TJ, Tstg
−55 to
+175
°C
IS
60
A
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 70 A,
L = 0.3 mH, RG = 25 W)
EAS
735
mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
TL
tp = 10 ms
Operating and Storage Temperature Range
Source Current (Body Diode)
260
°C
Symbol
Max
Unit
RqJC
0.7
°C/W
Junction−to−Case (Drain)
Steady State (Note 1)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 1
4
1
1
2
3
1
2
D2PAK
CASE 418B
STYLE 2
TO−220AB
CASE 221A
STYLE 5
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
5426N
AYWW
5426N
AYWW
1
Gate
THERMAL RESISTANCE RATINGS
Parameter
4
85
PD
Pulsed Drain Current
TC = 25°C
S
3
Source
1
Gate
2
Drain
3
Source
2
Drain
G
A
Y
WW
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTB5426N/D
NTB5426N, NTP5426N, NVB5426N
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VDS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
IDSS
V
64
VGS = 0 V
VDS = 60 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
25
IGSS
VDS = 0 V, VGS = $20 V
VGS(th)
VGS = VDS, ID = 250 mA
$100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Voltage
VGS(th)/TJ
2.0
3.1
4.0
9.2
VDS(on)
V
mV/°C
0.36
V
6.0
mW
VGS = 10 V, ID = 60 A
0.3
VGS = 10 V, ID = 60 A, 150°C
0.6
RDS(on)
VGS = 10 V, ID = 60 A
4.9
gFS
VDS = 15 V, ID = 20 A
65
S
Input Capacitance
Ciss
5800
pF
Output Capacitance
Coss
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Transfer Capacitance
Crss
Static Drain−to−Source On−Resistance
Forward Transconductance
CHARGES, CAPACITANCES & GATE RESISTANCE
1000
370
VGS = 10 V, VDS = 48 V,
ID = 60 A
Total Gate Charge
QG(TOT)
150
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
28
Gate−to−Drain Charge
QGD
67
170
nC
6.0
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
td(on)
tr
Turn−Off Delay Time
Fall Time
VGS = 10 V, VDD = 48 V,
ID = 60 A, RG = 3.0 W
ns
15
100
td(off)
105
tf
95
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V
IS = 60 A
TJ = 25°C
0.88
TJ = 100°C
0.78
IS = 60 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
25
QRR
235
Reverse Recovery Stored Charge
1.1
75
Vdc
ns
50
mC
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTP5426N
Package
Shipping†
TO−220AB (Pb−Free)
50 Units / Rail
NTB5426NT4G
D2PAK (Pb−Free)
800 / Tape & Reel
NVB5426NT4G
D2PAK (Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NTB5426N, NTP5426N, NVB5426N
TYPICAL CHARACTERISTICS
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
6.6 V
6.0 V
160
5.8 V
120
5.4 V
80
5.0 V
40
0
VDS ≥ 10 V
TJ = 25°C
ID, DRAIN CURRENT (A)
200
240
6.2 V
6.4 V
10 V
VGS = 4.6 V
0
1
2
3
4
5
160
120
80
TJ = 25°C
40
TJ = −55°C
3
4
5
6
7
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 60 A
TJ = 25°C
0.010
0.009
0.008
0.007
0.006
0.005
5
6
7
8
10
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.006
TJ = 25°C
VGS = 10 V
0.005
0.004
10
30
50
70
90
130
110
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
2.5
VGS = 0 V
ID = 60 A
VGS = 10 V
2.0
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.011
0.004
200
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
240
1.5
1.0
0.5
−50 −25
0
25
50
75
100
125
150
175
TJ = 150°C
1000
TJ = 125°C
100
5
TJ, JUNCTION TEMPERATURE (°C)
10
15
20
25
30
35
40
45
50
55 60
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTB5426N, NTP5426N, NVB5426N
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
10,000
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
12,000
Ciss
8000
6000
Coss
4000
2000
Crss
0
10
20
40
30
50
60
td(off)
t, TIME (ns)
tr
td(on)
1.0
10
TJ = 25°C
ID = 60 A
VDS = 48 V
2.0
0
0
25
50
75
100
125
150
VGS = 0 V
TJ = 25°C
100
80
60
40
20
0
100
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
800
VGS = 10 V
Single Pulse
TC = 25°C
100 ms
ID = 70 A
10 ms
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
4.0
120
tf
10
1 ms
dc
10 ms
10
1
0.1
Q2
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
100
Q1
6.0
Figure 7. Capacitance Variation
VDD = 48 V
ID = 60 A
VGS = 10 V
1000
8.0
QG, TOTAL GATE CHARGE (nC)
1000
1.0
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IS, SOURCE CURRENT (A)
0
10
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
600
400
200
0
100
25
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
175
NTB5426N, NTP5426N, NVB5426N
TYPICAL CHARACTERISTICS
100
R(t) (°C/W)
D = 0.5
10 0.2
0.1
1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
Surface Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
http://onsemi.com
5
1
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE L
DATE 17 FEB 2015
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
−B−
V
W
4
1
2
A
S
3
−T−
SEATING
PLANE
K
W
J
G
D
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
H
3 PL
0.13 (0.005)
M
T B
M
VARIABLE
CONFIGURATION
ZONE
N
R
P
L
M
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
U
L
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 5:
STYLE 6:
PIN 1. CATHODE
PIN 1. NO CONNECT
2. ANODE
2. CATHODE
3. CATHODE
3. ANODE
4. ANODE
4. CATHODE
MARKING INFORMATION AND FOOTPRINT ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D2PAK 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
D2PAK 3
CASE 418B−04
ISSUE L
DATE 17 FEB 2015
GENERIC
MARKING DIAGRAM*
xx
xxxxxxxxx
AWLYWWG
xxxxxxxxG
AYWW
AYWW
xxxxxxxxG
AKA
IC
Standard
Rectifier
xx
A
WL
Y
WW
G
AKA
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D2PAK 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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