NVC3S5A51PLZT1G

NVC3S5A51PLZ Power MOSFET 60V, 250mΩ, 1.8A, P-Channel www.onsemi.com Automotive Power MOSFET designed to minimize gate charge and low on resistance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features  4V drive  High ESD protection  Low On-Resistance  AEC-Q101 qualified and PPAP capable  Pb-Free, Halogen Free and RoHS compliance VDSS RDS(on) Max 250mΩ@ 10V ID Max 60V 330mΩ@ 4.5V 1.8A 350mΩ@ 4.0V ELECTRICAL CONNECTION P-Channel Typical Applications  Reverse Battery Protection  High Side Load Switch  Automotive Body Controllers 3 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 1 Parameter Symbol Value Unit VDSS Drain to Source Voltage V 60 VGSS Gate to Source Voltage V 20 Drain Current (DC) (Note 2) A 1.8 ID Drain Current (DC) (Note 3) A 1.7 Drain Current (Pulse) IDP A 7.2 PW  10s, duty cycle  1% Power Dissipation 1.2 W Ta=25C(Note 2) PD Power Dissipation 0.8 W Ta=25C(Note 3) Junction Temperature and Tj, Tstg 55 to +175 C Storage Temperature Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 : Gate 2 : Source 3 : Drain 2 MARKING 3 1 2 CPH3 ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Symbol Value (Note 2) Unit 125 C/W 182 C/W RJA Junction to Ambient (Note 3) Note 2 : Surface mounted on ceramic substrate(900mm  0.8mm). Note 3 : Surface mounted on FR4 board using a 92mm2, 1 oz. Cu pad. 2 © Semiconductor Components Industries, LLC, 2016 January 2016 - Rev. 0 1 Publication Order Number : NVC3S5A51PLZ/D NVC3S5A51PLZ ELECTRICAL CHARACTERISTICS at Ta  25C (Note 4) Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current VDS=60V, VGS=0V 1 A Gate to Source Leakage Current IGSS VGS=16V, VDS=0V 10 A Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 2.6 V Forward Transconductance gFS VDS=10V, ID=1A 2.7 ID=1A, VGS=10V 190 250 m ID=0.5A, VGS=4.5V 235 330 m ID=0.5A, VGS=4V 250 350 m Static Drain to Source On-State Resistance RDS(on) Input Capacitance Ciss Conditions Value Parameter min typ 60 Unit V 1.2 262 VDS=20V, f=1MHz max S pF Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) 5.1 ns Rise Time tr 5.4 ns Turn-OFF Delay Time td(off) 34 ns Fall Time tf 19 ns Total Gate Charge Qg 6.0 nC Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd See Fig.1 VDS=30V, VGS=10V, ID=1.8A 29 pF 19 pF 0.83 nC 1.3 nC VSD IS=1.8A, VGS=0V Forward Diode Voltage V 0.82 1.2 Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Switching Time Test Circuit www.onsemi.com 2 NVC3S5A51PLZ www.onsemi.com 3 NVC3S5A51PLZ www.onsemi.com 4 NVC3S5A51PLZ PACKAGE DIMENSIONS unit : mm CPH3 CASE 318BA ISSUE O RECOMMENDED SOLDERING FOOTPRINT 2.4 1.4 0.6 1 : Gate 2 : Source 3 : Drain 0.95 www.onsemi.com 5 0.95 NVC3S5A51PLZ ORDERING INFORMATION Device NVC3S5A51PLZT1G Marking Package Shipping (Qty / Packing) WH CPH3 (Pb-Free / Halogen Free) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the NVC3S5A51PLZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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