NVC6S5A354PLZT1G

NVC6S5A354PLZ Power MOSFET 60V, 100mΩ, 4A, P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features  4V drive  High ESD protection  Low On-Resistance  Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 100mΩ@ 10V ID Max 60V 135mΩ@ 4.5V 4A 145mΩ@ 4.0V ELECTRICAL CONNECTION P-Channel Typical Applications  Reverse Battery Protection  High Side Load Switch 1, 2, 5, 6 3 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit VDSS Drain to Source Voltage V 60 VGSS Gate to Source Voltage V 20 Drain Current (DC) (Note 2) A 4 ID Drain Current (DC) (Note 3) A 3 Drain Current (Pulse) IDP A 16 PW  10s, duty cycle  1% Power Dissipation 1.9 W Ta=25C(Note 2) PD Power Dissipation 0.9 W Ta=25C(Note 3) Junction Temperature and Tj, Tstg 55 to +175 C Storage Temperature Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain MARKING 6 1 23 5 4 CPH6 ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Symbol Value (Note 2) Unit 78.1 C/W 160 C/W RJA Junction to Ambient (Note 3) Note 2 : Surface mounted on ceramic substrate(1500mm  0.8mm). Note 3 : Surface mounted on FR4 board using a 92mm2, 1 oz. Cu pad. 2 © Semiconductor Components Industries, LLC, 2015 December 2015 - Rev. 0 1 Publication Order Number : NVC6S5A354PLZ/D NVC6S5A354PLZ ELECTRICAL CHARACTERISTICS at Ta  25C (Note 4) Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current VDS=60V, VGS=0V 1 A Gate to Source Leakage Current IGSS VGS=16V, VDS=0V 10 A Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 2.6 V Forward Transconductance gFS VDS=10V, ID=2A 4.8 ID=2A, VGS=10V 77 100 m 96 135 m 103 145 m Static Drain to Source On-State Resistance RDS(on) Input Capacitance Ciss Conditions Value Parameter ID=1A, VGS=4.5V ID=1A, VGS=4V min typ 60 Unit V 1.2 600 VDS=20V, f=1MHz max S pF Output Capacitance Coss 60 pF Reverse Transfer Capacitance Crss 50 pF Turn-ON Delay Time td(on) 5.8 ns Rise Time tr 12 ns Turn-OFF Delay Time td(off) 78 ns Fall Time tf 40 ns Total Gate Charge Qg 14 nC Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd See Fig.1 VDS=30V, VGS=10V, ID=4A 1.6 nC 3.4 nC VSD IS=4A, VGS=0V Forward Diode Voltage V 0.84 1.2 Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Switching Time Test Circuit www.onsemi.com 2 NVC6S5A354PLZ www.onsemi.com 3 NVC6S5A354PLZ VGS -- Qg --10 --9 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --100 7 5 3 2 VDS= --30V ID= --4A --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 Total Gate Charge, Qg -- nC 14 16 --10 7 5 3 2 --0.1 7 5 3 2 IT16622 Power Dissipation, PD -- W 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 Surface mounted on FR4 board using a 92mm2, 1 oz. Cu pad. 0 25 50 75 100 125 150 Ambient Temperature, Ta -- C 175 10 0 ID= --3A DC 200 HD150610 www.onsemi.com 4 s 1m 10 10 ms 0m s op s er ati Operation in this area is limited by RDS(on). on (T a= 25 C ) Ta=25C Single pulse Surface mounted on FR4 board using a 92mm2, 1 oz. Cu pad. --0.01 --0.01 2 3 Surface mounted on ceramic substrate(1500mm20.8mm). 0.2 IDP= --16A (PW10s) --1.0 7 5 3 2 PD -- Ta 2.0 SOA 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 Drain to Source Voltage, VDS -- V 5 7--100 HD1150610 NVC6S5A354PLZ PACKAGE DIMENSIONS unit : mm CPH6 CASE 318BD ISSUE O Recommended Soldering Footprint 2.4 1.4 0.6 1 : Drain 0.95 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain www.onsemi.com 5 0.95 NVC6S5A354PLZ ORDERING INFORMATION Device NVC6S5A354PLZT1G Marking Package Shipping (Qty / Packing) XE CPH6 (Pb-Free / Halogen Free) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the NVC6S5A354PLZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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