NVMFS5A140PLZT1G

NVMFS5A140PLZ MOSFET – Power, Single P-Channel -40 V, -140 A, 4.2 mW Features www.onsemi.com • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • NVMFS5A140PLZWF: Wettable Flank Option for Enhanced Optical VDSS Inspection −40 V • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant RDS(ON) MAX ID MAX 4.2 mW @ −10 V −140 A 7.2 mW @ −4.5 V D (5) SPECIFICATION MAXIMUM RATINGS (TJ = 25°C unless otherwise 1: Source 2: Source 3: Source 4: Gate 5: Drain noted) (Notes 1, 2, 3) Parameter Symbol Value Unit VDSS Drain to Source Voltage −40 V VGS Gate to Source Voltage ±20 V TC = 25°C −140 A TC = 25°C 200 W TA = 25°C −20 A TA = 25°C 3.8 W −560 A ID Continuous Drain, Current RqJC, (Notes 1, 3) PD Power Dissipation RqJC (Note 1) ID Continuous Drain: Current RqJA (Notes 1, 2, 3) PD Power Dissipation RqJA (Note 1, 2) IDP Pulsed Drain Current TJ, TSTG IS EAS TL Steady State Steady State PW ≤ 10 ms, duty cycle ≤ 1% Operating Junction and Storage Temperature −55 to +175 °C Source Current (Body Diode) −140 A Single Pulse Drain to Source Avalanche Energy (L= 1.0 mH, IL(pk) = −29 A) 420 mJ Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. S (1,2,3) P-CHANNEL MOSFET DFN5 (SO−8FL) MARKING DIAGRAM D S S S G XXXXXX A Y W ZZ D XXXXXX AYWZZ D D = Specific Device Code 5A140L(NVMFS5A140PLZ) 140LWF(NVMFS5A140PLZWF) = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. THERMAL CHARACTERISTICS Symbol G (4) Parameter RqJC Junction to Case Steady State RqJA Junction to Ambient Steady State (Note 2) Value 0.75 39 Unit °C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 July, 2019 − Rev. 0 1 Publication Order Number: NVMFS5A140PLZ/D NVMFS5A140PLZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS V(BR)DSS IDSS IGSS Drain to Source Breakdown Voltage ID = −1 mA, VGS = 0 V Zero Gate Voltage Drain Current VDS = −40 V, VGS = 0 V Gate to Source Leakage Current −40 V TJ = 25°C −1.0 mA TJ = 100°C (Note 4) −100 mA ±10 mA −2.6 V VGS = ±16 V, VDS = 0 V ON CHARACTERISTICS (Note 5) VGS(th) Gate Threshold Voltage VDS = −10 V, ID = −1 mA RDS(on) Drain to Source On Resistance VGS = −10 V ID = −50 A 3.2 4.2 VGS = −4.5 V ID = −50 A 5.0 7.2 gFS Forward Transconductance VDS = −10 V, ID = −50 A −1.2 125 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain Charge VGS = 0 V, f = 1 MHz VDS = −20 V, 7400 1030 pF 720 VGS = −10 V, ID = −50 A VDS = −20 V, 136 26 nC 31 SWITCHING CHARACTERISTICS (Note 6) td(on) tr td(off) tf Turn-On Delay Time Rise Time VDS = −20 V, ID = −50 A, VGS = −10 V, RG = 50 W 50 860 Turn-Off Delay Time 540 Fall Time 740 ns DRAIN-SOURCE DIODE CHARACTERISTICS VSD Forward Diode Voltage VGS = 0 V, IS = −50 A −0.83 −1.5 V trr Reverse Recovery Time 108 ns Qrr Reverse Recovery Charge VGS = 0 V, IS = −50 A di/dt = 100 A/ms 236 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 100 °C. Product is not tested to this condition in production. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2 %. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5A140PLZ TYPICAL CHARACTERISTICS Figure 1. ID − VDS Figure 2. ID − VGS Figure 3. RDS(on) − VGS Figure 4. RDS(on) − TJ Figure 5. IS − VSD Figure 6. SW Time − ID www.onsemi.com 3 NVMFS5A140PLZ TYPICAL CHARACTERISTICS Figure 7. Ciss, Coss, Crss − VDS Figure 8. VGS − Qg Figure 9. SOA Figure 10. IPEAK − TAV Figure 11. PD − TC www.onsemi.com 4 NVMFS5A140PLZ TYPICAL CHARACTERISTICS Figure 12. RqJA − Pulse Time www.onsemi.com 5 NVMFS5A140PLZ ORDERING INFORMATION Marking Package Shipping (Qty / Packing)† NVMFS5A140PLZT1G 5A140L DFN5 5x6, 1.27P (SO−8FL) (Pb-Free) 1.500 / Tape & Reel NVMFS5A140PLZWFT1G 140LWF DFN5 5x6, 1.27P (SO−8FL) (Pb-Free / Wettable Flanks) 1.500 / Tape & Reel NVMFS5A140PLZT3G 5A140L DFN5 5x6, 1.27P (SO−8FL) (Pb-Free) 5.000 / Tape & Reel NVMFS5A140PLZWFT3G 140LWF DFN5 5x6, 1.27P (SO−8FL) (Pb-Free / Wettable Flanks) 5.000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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