NVC6S5A444NLZT2G

NVC6S5A444NLZ Power MOSFET 60 V, 78 mW, 4.5 A, N−Channel Automotive Power MOSFET designed to minimize gate charge and low on resistance. AEC−Q101 qualified MOSFET and PPAP capable suitable for automotive applications. www.onsemi.com Features • • • • • 4.5 V Drive High ESD Protection Low On−Resistance CPH6 Package is Pin−Compatible with SOT−26 Pb−Free, Halogen Free and RoHS Compliance VDSS RDS(on) MAX ID MAX 78 mW @ 10 V 60 V 4.5 A 120 mW @ 4.5 V Typical Applications • Load Switch • Motor Drive ELECTRICAL CONNECTION N−Channel 1, 2, 5, 6 Specifications ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V ID 4.5 A 3.5 A Drain Current (DC) (Note 1) Drain Current (DC) (Note 2) Drain Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1% IDP 18 A Power Dissipation Ta = 25°C (Note 1) PD 1.9 W 0.97 W −55 to +175 °C Power Dissipation Ta = 25°C (Note 2) Junction Temperature and Storage Temperature Tj, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 3 4 MARKING DIAGRAM 65 12 3 4 CPH6 LOT No Value ZW Symbol Parameter CASE 318BD ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction to Ambient (Note 1) (Note 2) Symbol Value Unit RqJA 78.1 °C/W 153 °C/W 1. Surface mounted on ceramic substrate (900 mm2 × 0.8 mm). 2. Surface mounted on FR4 board using a 92 mm2, 1 oz. Cu pad. © Semiconductor Components Industries, LLC, 2017 August, 2018 − Rev. 0 1 Publication Order Number: NVC6S5A444NLZ/D NVC6S5A444NLZ ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Conditions Min Typ Max Unit V(BR)DSS ID = 1 mA, VGS = 0 V 60 − − V Zero−Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V − − 1.0 μA Gate to Source Leakage Current IGSS VGS = ±16 V, VDS = 0 V − − ±10 μA VGS(th) VDS = 10 V, ID = 1 mA 1.2 − 2.6 V gFS VDS = 10 V, ID = 2 A − 3.0 − S RDS(on) ID = 2 A, VGS = 10 V − 60 78 mW ID = 1 A, VGS = 4.5 V − 84 120 mW VDS = 20 V, f = 1 MHz − 505 − pF Drain to Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Static Drain to Source On−State Resistance Input Capacitance Ciss Output Capacitance Coss − 57 − pF Reverse Transfer Capacitance Crss − 37 − pF Turn−ON Delay Time td(on) − 7.3 − ns tr − 9.8 − ns td(off) − 40 − ns tf − 24 − ns − 10 − nC − 1.6 − nC − 2.1 − nC − 0.86 1.2 V Rise Time Turn−OFF Delay Time Fall Time Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD See Figure 1 VDS = 30 V, VGS = 10 V, ID = 4.5 A IS = 4.5 A, VGS = 0 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 10 V 0V VDD = 30 V VIN ID = 2 A RL = 15 W VIN VOUT D PW = 10 ms D.C. ≤ 1% G NVC6S5A444NLZ P.G 50 W S Figure 1. Switching Time Test Circuit www.onsemi.com 2 NVC6S5A444NLZ TYPICAL CHARACTERISTICS 6 4.5 V 10 V 10 4V 4 3 VGS = 3 V 2 1 Ta = 25°C Single Pulse 0 0.2 0.4 0.6 0.8 6 5 25°C 4 3 −25°C Ta = 75°C 2 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE, VGS − V Figure 2. ID − VDS Figure 3. ID − VGS 200 2A ID = 1 A 150 100 50 2 4 6 8 10 12 14 16 200 5 Single Pulse 180 160 140 120 100 80 60 40 20 0 −50 −25 0 25 50 75 100 125 150 175 GATE TO SOURCE VOLTAGE, VGS − V AMBIENT TEMPERATURE, Ta − °C Figure 4. RDS(on) − VGS Figure 5. RDS(on) − Ta 10 10 VDS = 10 V VGS = 0 V Single Pulse Single Pulse 1 0.1 0.01 7 DRAIN TO SOURCE VOLTAGE, VDS − V Ta = 25 °C Single Pulse 0 8 0 1 250 0 Single Pulse 1 SOURCE CURRENT, IS − A STATIC DRAIN TO SOURCE ON−STATE RESISTANCE, RDS(on) − mW FORWARD TRANSCONDUTANCE, gFS − S DRAIN CURRENT, ID − A 3.5 V 7V STATIC DRAIN TO SOURCE ON−STATE RESISTANCE, RDS(on) − mW DRAIN CURRENT, ID − A 5 0 VDS = 10 V 9 0.1 1 1 0.1 0.01 0.2 10 DRAIN CURRENT, ID − A 0.4 0.6 0.8 1 FORWARD DIODE VOLTAGE, VSD − V Figure 6. gFS − ID Figure 7. IS − VSD www.onsemi.com 3 1.2 NVC6S5A444NLZ TYPICAL CHARACTERISTICS td(off) 10 td(on) tr 100 Coss Crss 10 1 10 0 10 20 30 40 50 DRAIN CURRENT, ID − A DRAIN TO SOURCE VOLTAGE, VDS − V Figure 8. SW TIME − ID Figure 9. Ciss, Coss, Crss − VDS 60 100 10 VDD = 30 V ID = 4.5 A IDP = 18 A (PW ≤ 10 ms) DRAIN CURRENT, ID − A 9 8 7 6 5 3 2 1 0 1 2 3 4 5 6 7 8 9 10 TOTAL GATE CHARGE, Qg − nC 1.8 ID = 3.5 A 10 ms 1 Figure 11. SOA Surface mounted on ceramic substrate (900 mm2 × 0.8 mm) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 Surface mounted on FR4 board using a 92 mm2, 1 oz. Cu pad. 0 0 25 50 75 100 125 150 175 100 ms 10 Figure 10. VGS − Qg 2 1 ms 100 ms Operation in this area is limited by RDS(on) DC Operation 0,1 Ta = 25°C Single Pulse (Ta = 25°C) Surface mounted on FR4 board using a 92 mm2, 1 oz. Cu pad. 0,01 0,1 1 10 DRAIN TO SOURCE VOLTAGE, VDS − V 4 0 ALLOWABLE POWER DISSIPATION, PD − W f = 1 MHz Ciss tf 1 0.1 GATE TO SOURCE VOLTAGE, VGS − V 1000 VDD = 30 V VGS = 10 V Ciss, Coss, Crss −pF - ns − ns SWITCHING TIME, SW Time 100 200 AMBIENT TEMPERATURE, Ta − °C Figure 12. PD − Ta www.onsemi.com 4 100 NVC6S5A444NLZ TYPICAL CHARACTERISTICS THERMAL RESISTANCE, RqJA − °C/W 1000 RqJA = 153°C/W ̊ 100 10 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.01 1 Single Pulse 0.1 Surface mounted on FR4 board using a 92 mm2, 1 oz. Cu pad. 0.01 1E−05 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME, PT − s Figure 13. RqJA − PULSE TIME DEVICE ORDERING INFORMATION Device NVC6S5A444NLZT1G Marking Package Shipping† ZW CPH6 (Pb−Free / Halogen Free) 3,000 / Tape & Reel NVC6S5A444NLZT2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Since the NVC6S5A444NLZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS CPH6 CASE 318BD ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON65440E CPH6 DATE 30 NOV 2011 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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