NVMFS5C612NL
MOSFET – Power, Single
N-Channel
60 V, 1.36 mW, 250 A
Features
•
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5C612NLWF − Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
www.onsemi.com
V(BR)DSS
RDS(ON) MAX
1.36 mW @ 10 V
60 V
D (5,6)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
ID
250
A
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
S (1,2,3)
W
167
ID
27
3.8
IDM
900
TJ, Tstg
−55 to
+175
°C
IS
164
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 17 A)
EAS
451
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
TA = 100°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
W
1.9
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
D
S
S
S
G
D
XXXXXX
AYWZZ
D
D
XXXXXX = 5C612L
XXXXXX = (NVMFS5C612NL) or
XXXXXX = 612LWF
XXXXXX = (NVMFS5C612NLWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
MARKING
DIAGRAM
A
38
PD
Pulsed Drain Current
N−CHANNEL MOSFET
83
TA = 100°C
TA = 25°C
G (4)
175
PD
250 A
2.3 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
ID MAX
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.9
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
July, 2019 − Rev. 6
1
Publication Order Number:
NVMFS5C612NL/D
NVMFS5C612NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
12.7
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = ±16 V
VGS(TH)
VGS = VDS, ID = 250 mA
±100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−5.76
VGS = 10 V
ID = 50 A
1.13
1.36
VGS = 4.5 V
ID = 50 A
1.65
2.3
gFS
VDS = 15 V, ID = 50 A
V
mV/°C
151
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
6660
VGS = 0 V, f = 1 MHz, VDS = 25 V
2953
pF
45
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 30 V; ID = 50 A
41
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 30 V; ID = 50 A
91
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
2.9
td(ON)
19
5
VGS = 4.5 V, VDS = 30 V; ID = 50 A
nC
17.1
10.9
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 30 V,
ID = 50 A, RG = 1.0 W
tf
51
ns
47
18
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.78
TJ = 125°C
0.66
tRR
ta
tb
1.2
V
78
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
36
ns
42
105
nC
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
NVMFS5C612NL
TYPICAL CHARACTERISTICS
200
200
VGS = 10 V to 3.4 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
160
3.2 V
140
120
3.0 V
100
2.8 V
80
60
40
20
0
0
0.5
1.0
1.5
VDS ≤ 10 V
180
2.0
2.5
160
140
120
100
80
3.0
TJ = 25°C
60
40
20
0
TJ = 125°C
TJ = −55°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
180
2.1
2.0
1.9
TJ = 25°C
ID = 50 A
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
VGS, GATE VOLTAGE (V)
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
4.0
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
10
30
50
70
90
110 130
150 170 190
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS = 10 V
ID = 40 A
1.7
100,000
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1,000,000
1.9
1.5
1.3
1.1
0.9
0.7
−50 −25
0
25
50
75
100
125
150
175
TJ = 150°C
TJ = 125°C
10,000
TJ = 85°C
1000
100
10
5
15
25
35
45
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
55
NVMFS5C612NL
CISS
6000
5000
VGS = 0 V
TJ = 25°C
f = 1 MHz
COSS
4000
3000
2000
1000
0
CRSS
0
10
20
30
40
50
25
20
6
15
4
QGD
QGS
2
0
0
10
20
30
40
50
60
70
5
80
90
0
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
td(off)
VGS = 4.5 V
VDD = 30 V
ID = 50 A
46
tf
tr
100
td(on)
10
41
TJ = 125°C
36
31
26
21
TJ = 25°C
16
11
6
1
10
VDS = 30 V
TJ = 25°C
ID = 50 A
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
t, TIME (ns)
60
30
QT
8
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
7000
10
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
8000
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
1
100
TJ = −55°C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
TC = 25°C
VGS ≤ 10 V
0.01 ms
0.1 ms
TJ(initial) = 25°C
IPEAK (A)
IDS (A)
100
1 ms
dc
10 ms
10
TJ(initial) = 100°C
10
RDS(on) Limit
Thermal Limit
Package Limit
1
0.1
1
10
1
100
1E−04
1E−03
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
www.onsemi.com
4
1E−02
NVMFS5C612NL
100
R(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
NVMFS5C612NL 650 mm2, 2 oz., Cu Single Layer Pad
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NVMFS5C612NLT1G
5C612L
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5C612NLWFT1G
612LWF
DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
NVMFS5C612NLT3G
5C612L
DFN5
(Pb−Free)
5000 / Tape & Reel
NVMFS5C612NLWFT3G
612LWF
DFN5
(Pb−Free, Wettable Flanks)
5000 / Tape & Reel
NVMFS5C612NLAFT1G
5C612L
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5C612NLWFAFT1G
612LWF
DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative