NVMFWS0D7N04XMT1G

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, STD Gate, SO8-FL V(BR)DSS RDS(on) MAX ID MAX 40 V 0.7 mW 323 A N−CHANNEL MOSFET 40 V, 0.7 mW, 323 A D (5) NVMFWS0D7N04XM Features • • • • • G (4) Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Small Footprint (5 x 6 mm) with Compact Design AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant S (1,2,3) Applications DFNW5 (SO−8FL) CASE 507BA • Motor Drive • Battery Protection • Synchronous Rectification MARKING DIAGRAM D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 323 A Continuous Drain Current TC = 25°C TC = 100°C 229 Power Dissipation TC = 25°C PD 134 W Continuous Drain Current TA = 25°C IDA 9.18 A TA = 100°C Pulsed Drain Current Pulsed Source Current (Body Diode) TC = 25°C, tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Avalanche Energy (IPK = 21 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 6.49 IDM 900 A ISM 900 A TJ, TSTG −55 to 175 °C IS 202 A EAS 987 mJ TL 260 °C S S S G D 0D7N4W AYWZZ D D A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2021 February, 2023 − Rev. 3 1 Publication Order Number: NVMFWS0D7N04XM/D NVMFWS0D7N04XM THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance, Junction−to−Case (Note 2) RqJC 1.11 °C/W Thermal Resistance, Junction−to−Ambient (Notes 1, 2) RqJA 39.3 mm2 1. Surface−mounted on FR4 board using 650 pad, 2 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 40 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain−to−Source Breakdown Voltage Temperature Coefficient DV(BR)DSS/ DTJ ID = 250 mA, Referenced to 25°C Zero Gate Voltage Drain Current IDSS V 14.9 mV/°C VDS = 40 V, TJ = 25°C 1 VDS = 40 V, TJ = 125°C 40 IGSS VGS = 20 V, VDS = 0 V 100 nA Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 50 A 0.59 0.7 mW Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 180 mA 3.0 3.5 V DVGS(TH)/ DTJ VGS = VDS, ID = 180 mA −7.2 mV/°C gFS VDS = 5 V, ID = 50 A 244 S VGS = 0 V, VDS = 25 V, f = 1 MHz 4595 pF Gate−to−Source Leakage Current mA ON CHARACTERISTICS Gate Threshold Voltage Temperature Coefficient Forward Trans−conductance 2.5 CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS 2980 Reverse Transfer Capacitance CRSS 41.8 VGS = 10 V, VDD = 32 V; ID = 50 A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) 13.5 Gate−to−Source Charge QGS 20.6 Gate−to−Drain Charge QGD Gate Resistance nC 71.6 13 RG f = 1 MHz 0.69 W td(ON) VGS = 0/10 V, VDD = 32 V, ID = 50 A, RG = 0 W 7.33 ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time tr 5.39 td(OFF) 11.1 tf 4.48 Fall Time SOURCE TO DRAIN DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 50 A TJ = 25°C 0.81 TJ = 125°C 0.66 VDD = 32 V, IF = 50 A, dI/dt = 100 A/ms tRR ta 94.4 1.2 V ns 55.6 tb 38.8 QRR 269 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NVMFWS0D7N04XM TYPICAL CHARACTERISTICS 700 ID , Drain Current(A) 800 VGS=4.5V VGS=5V VGS=5.5V VGS=6V VGS=7V VGS=8V VGS=9V VGS=10V TJ=25°C 600 500 400 300 600 500 400 300 200 200 100 100 0 0 0.5 VDS=5V 700 ID , Drain Current(A) 800 1 1.5 2 2.5 VDS , Drain to Source Voltage(V) 0 3 TJ=−55°C TJ=25°C TJ=175°C 0 1 8 TJ=25°C TJ=175°C ID=50A 7 6 5 4 3 2 1 0 4 5 6 7 8 VGS , Gate to Source Voltage(V) 9 10 0.7 0.66 0.64 0.62 0.6 0.58 0.56 0.54 0.52 0.5 VGS=10V VGS=12V 0 100 200 300 400 ID , Drain Current(A) 500 600 Figure 4. On−Resistance vs. Drain Current 1.0e−04 ID=50A VGS=0V 1.0e−05 1.8 IDSS , Drain Leakage (A) RDS(ON) , Drain to Source ON Resistance(Normalized) 7 TJ=25°C 0.68 Figure 3. On−Resistance vs. Gate Voltage 2 6 Figure 2. Transfer Characteristics R DS(ON) , Drain to Source ON Resistance(mOhm) R DS(ON) , Drain to Source ON Resistance(mOhm) Figure 1. On−Region Characteristics 2 3 4 5 VGS , Gate to Source Voltage(V) 1.6 1.4 1.2 1 1.0e−06 1.0e−07 1.0e−08 TJ=25 °C TJ=85 °C TJ=125 °C TJ=150 °C TJ=175 °C 1.0e−09 0.8 0.6 −75 −50 −25 0 25 50 75 100 125 TJ, Junction Temperature(°C) 150 1.0e−10 5 175 10 15 20 25 30 35 VDS,Drain to Source Voltage(V) Figure 5. Normalized ON Resistance vs. Junction Temperature Figure 6. Drain Leakage vs. Drain−to−Source Voltage www.onsemi.com 3 40 NVMFWS0D7N04XM TYPICAL CHARACTERISTICS 10 VGS , Gate to Source Voltage(V) C, Capacitance(pF) 10000 VGS=0V TJ=25°C f=1MHz 1000 100 10 8 6 4 2 C ISS C OSS C RSS 0 5 10 15 20 25 30 VDS , Drain to Source Voltage(V) 35 ID=50A 0 40 VDD=8V VDD=24V VDD=32V 0 10 Figure 7. Capacitance Characteristics 1000 VGS=10V VDS=32V ID=50A 1e−08 td(on) td(off) tr tf 1 10 RG ,Gate Resistance(Ohm) 0.01 100 TJ=175°C TJ=25°C TJ=−55°C 0 0.2 0.4 0.6 0.8 1 VSD , Body Diode Forward Voltage(V) 1.2 Figure 10. Diode Forward Characteristics 100 TJ =25_C TJ=100_C IAS, Avalanche Current (A) ID, Drain Current (A) 80 10 0.1 TC=25_C TJ=175_C C 1000 Single Pulse 100 10 0.1 0.1 70 VGS=0V Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1 60 100 1e−07 1e−09 1 30 40 50 QG , Gate Charge(nC) Figure 8. Gate Charge Characteristics IS , Source Current(A) t, Resistive Switching Time(sec) 1e−06 20 Ron limit Package limit BV limit pulseDuration=0.5ms pulseDuration=1ms pulseDuration=10ms 10 1e−05 1 10 VDS,Drain to Source Voltage(V) Figure 11. Maximum Rated Forward Biased Safe Operating Area 1e−04 1e−03 tAV ,TIME IN AVALANCHE(s) Figure 12. Ipeak vs. Time in Avalanche www.onsemi.com 4 1e−02 NVMFWS0D7N04XM Gate to Source Threshold Voltage(Normalized) TYPICAL CHARACTERISTICS 1.2 1.1 1 0.9 0.8 0.7 0.6 −75 −50 −25 0 25 50 75 100 TJ, Junction Temperature(°C) 125 150 175 ZqJA ,Effective Transient Thermal Impedance(°C/W) Figure 13. Gate Threshold Voltage vs. Junction Temperature 100 D=0 is Single Pulse 10 1 0.1 Notes: TJM = P DM x Z q JA (t) + TA PDM 0.01 t1 0.001 1e−06 1e−05 1e−04 1e−03 D=0.00 D=0.01 D=0.02 D=0.05 D=0.10 D=0.20 D=0.50 Duty Cycle, D = t1 /t 2 t2 1e−02 1e−01 t, Rectangular Pulse Duration (s) 1e+00 1e+01 1e+02 1e+03 Figure 14. Thermal Response ORDERING INFORMATION Device NVMFWS0D7N04XMT1G Marking Package Shipping† 0D7N4W DFNW5 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA ISSUE A DATE 03 FEB 2021 q q GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX A Y W ZZ = Specific Device Code *This information is generic. Please refer to = Assembly Location device data sheet for actual part marking. = Year Pb−Free indicator, “G” or microdot “ G”, = Work Week may or may not be present. Some products = Lot Traceability may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON26450H Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFNW5 5x6 (FULL−CUT SO8FL WF) PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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