NVMFWS016N10MCLT1G

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel V(BR)DSS 100 V, 14 mW, 46 A RDS(ON) MAX ID MAX 14 mW @ 10 V 100 V 46 A 20 mW @ 4.5 V NVMFS016N10MCL D (5,6) Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable NVMFWS016N10MCL − Wettable Flank Products These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V ID 46 A Parameter Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2) TC = 25°C Steady State TC = 100°C TC = 25°C Pulsed Drain Current PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1, 2) 32 Steady State ID Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 2.2 A) Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) A 10.9 PD W 3.6 1.8 IDM 243 A TJ, Tstg −55 to +175 °C IS 49 A EAS 358 mJ TL 260 °C D XXXXXX AYWZZ D D D W 64 7.7 TA = 100°C TA = 25°C, tp = 10 ms DFN5 CASE 488AA STYLE 1 32 TA = 100°C TA = 25°C D S S S G 1 DFNW5 (for WF Version) CASE 507BA XXXXXX A Y W ZZ S S S G D XXXXXX AYWZZ D D = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 1) RqJC 2.35 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 41 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz. Cu pad. © Semiconductor Components Industries, LLC, 2021 September, 2021 − Rev. 1 1 Publication Order Number: NVMFS016N10MCL/D NVMFS016N10MCL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 100 V IGSS V 60 mV/°C TJ = 25°C 1 TJ = 125°C 100 VDS = 0 V, VGS = 20 V 100 mA nA ON CHARACTERISTICS VGS(TH) VGS = VDS, ID = 64 mA VGS(TH)/TJ ID = 250 mA, ref to 25°C −5.6 RDS(on) VGS = 10 V, ID = 11 A 11.5 14 VGS = 4.5 V, ID = 9 A 16 20 Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance 1 3 V mV/°C mW Forward Transconductance gFS VDS = 10 V, ID = 11 A 42 S Gate−Resistance RG TA = 25°C 1.2 W 1250 pF CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1 MHz, VDS = 50 V 460 8 VGS = 4.5 V, VDS = 50 V, ID = 9 A nC Total Gate Charge QG(TOT) Total Gate Charge QG(TOT) 19 Threshold Gate Charge QG(TH) 2.1 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2.0 Plateau Voltage VGP 2.8 V td(ON) 10 ns VGS = 10 V, VDS = 50 V, ID = 11 A 9.0 3.7 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 50 V, ID = 11 A, RG = 6 W tf 3.4 26 4.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR Charge Time ta Discharge Time tb VGS = 0 V, IS = 11 A TJ = 25°C 0.84 TJ = 125°C 0.72 34 VGS = 0 V, dIS/dt = 100 A/ms, IS = 6 A 1.3 V ns 24 nC 16 ns 17 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2 NVMFS016N10MCL TYPICAL CHARACTERISTICS 3.2 V 30 3.0 V 25 20 2.8 V 15 10 2.6 V 5 2.4 V 0 0 2 1 3 4 25 20 TJ = 25°C 15 10 0 5 TJ = 150°C 0 4 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 18 17 16 15 14 13 12 3 4 5 6 7 8 10 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 18 TJ = 25°C VGS = 4.5 V 16 14 VGS = 10 V 12 10 5 13 17 15 19 21 23 25 100 TJ = 175°C 10 IDSS, LEAKAGE (nA) 2.0 1.5 1.0 TJ = 150°C 1 TJ = 125°C 0.1 TJ = 85°C 0.01 0.001 TJ = 25°C 0.0001 0 11 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 10 V ID = 11 A 0.5 −50 −25 9 7 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 3 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 11 A 2.5 TJ = −55°C 2 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 19 2 30 5 20 11 10 VDS = 10 V 35 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 35 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 40 VGS = 10 V to 3.4 V ID, DRAIN CURRENT (A) 40 25 50 75 100 125 150 175 0.00001 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NVMFS016N10MCL TYPICAL CHARACTERISTICS CISS C, CAPACITANCE (pF) 1K COSS 100 10 1 VGS, GATE−TO−SOURCE VOLTAGE (V) 10K VGS = 0 V TJ = 25°C f = 1 MHz 0 10 CRSS 20 30 40 50 60 70 80 90 10 9 8 7 6 5 4 QGS 3 TJ = 25°C ID = 11 A VDS = 50 V 2 1 0 100 0 14 16 18 Figure 8. Gate−to−Source Voltage vs. Total Charge 20 IS, SOURCE CURRENT (A) VGS = 0 V td(on) VGS = 10 V VDS = 50 V ID = 11 A tr 10 1 10 TJ = 125°C 1 100 0.4 0.5 TJ = 25°C 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 TC = 25°C Single Pulse VGS ≤ 10 V IAS, AVALANCHE CURRENT (A) t, TIME (ns) ID, DRAIN CURRENT (A) 12 Figure 7. Capacitance Variation tf 10 1 0.1 10 QG, TOTAL GATE CHARGE (nC) 10 100 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) td(off) 1000 6 4 2 100 1 QGD RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 ms 10 ms 0.5 ms 1 ms 10 TJ(initial) = 125°C 1 1000 100 TJ(initial) = 25°C 0.00001 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVMFS016N10MCL TYPICAL CHARACTERISTICS 100 Duty Cycle = 0.5 R(t) (°C/W) 10 0.2 0.1 0.05 1 0.02 0.01 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Transient Thermal Impedance DEVICE ORDERING INFORMATION Marking Package Shipping† NVMFS016N10MCLT1G 016L10 DFN5 (Pb−Free) 1500 / Tape & Reel NVMFWS016N10MCLT1G 016W10 DFN5 (Wettable Flank, Pb−Free) 1500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVMFS016N10MCL PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 2X 0.20 C D 2 A B D1 2X 0.20 C 2 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q 4X E1 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. q E c A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A 0.10 C SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* DETAIL A 2X 0.10 b C A B 0.05 c 0.495 8X 4.560 1.530 e 1 2X 4 0.475 3.200 K G STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 2X e/2 L PIN 5 (EXPOSED PAD) MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 5.00 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.15 6.00 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ E2 L1 D2 BOTTOM VIEW 4.530 M 1.330 2X 0.905 1 0.965 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 NVMFS016N10MCL PACKAGE DIMENSIONS DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA ISSUE A q q www.onsemi.com 7 NVMFS016N10MCL onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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