NVMTS0D4N04CLTXG

MOSFET - Power, Single N-Channel 40 V, 0.4 mW, 553.8 A NVMTS0D4N04CL Features • • • • • Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 0.4 mW @ 10 V 40 V 0.64 mW @ 4.5 V ID MAX 553.8 A Typical Applications • Power Tools, Battery Operated Vacuums • UAV/Drones, Material Handling • BMS/Storage, Home Automation D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V TC = 25°C ID 553.8 A TC = 100°C ID 394.8 A Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Steady State TC = 25°C PD 244 W TC = 100°C PD 122 W TA = 25°C ID 79.8 A TA = 100°C ID 56.4 A TA = 25°C PD 5.0 W TA = 100°C PD 2.5 W TA = 25°C, tp = 10 ms IDM 900 A TJ, Tstg −55 to + 175 °C IS 203.4 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 70 A) EAS 4454 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current Steady State Operating Junction and Storage Temperature Range Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit °C/W Junction−to−Case − Steady State (Note 2) RqJC 0.61 Junction−to−Ambient − Steady State (Note 2) RqJA 30.1 in2 1. Surface−mounted on FR4 board using a 1 pad size, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2018 January, 2020 − Rev. 2 1 G (1) S (2−4) N−CHANNEL MOSFET POWER 88 CASE 507AP MARKING DIAGRAM XXXXXXXX AWLYWW XXX = Device Code (8 A−N characters max) A = Assembly Location WL = 2−digit Wafer Lot Code Y = Year Code WW = Work Week Code ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NVMTS0D4N04CL/D NVMTS0D4N04CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 32 V V 8.86 mV/°C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA VGS(TH)/TJ ID = 250 mA, ref to 25°C mA 100 nA 2.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance RDS(on) 1.0 −6.24 mV/°C VGS = 10 V ID = 50 A 0.3 0.4 VGS = 4.5 V ID = 50 A 0.45 0.64 mW Forward Transconductance gFS VDS =5 V, ID = 50 A 330 S Gate Resistance RG TA = 25°C 1.0 W CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 20600 VGS = 0 V, f = 1 MHz, VDS = 20 V CRSS QG(TOT) Threshold Gate Charge QG(TH) QGS Gate−to−Drain Charge QGD Total Gate Charge Voltage Plateau pF 390 Total Gate Charge Gate−to−Source Charge 9500 VGS = 4.5 V, VDS = 20 V; ID = 50 A 163 29.8 51 VGS = 10 V, VDS = 20 V; ID = 50 A nC 52.1 QG(TOT) 341 VGP 2.7 V SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 110 tr 147 td(OFF) VGS = 4.5 V, VDS = 20 V, ID = 50 A, RG = 6 W tf ns 217 107 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 45.6 VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 6 W tf 39.8 ns 382 96.4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.75 TJ = 125°C 0.58 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 117 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 87 ns 30 336 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMTS0D4N04CL TYPICAL CHARACTERISTICS 800 700 600 700 3.4 V 3.6 V 500 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 800 VGS = 3.8 V to 10 V 3.2 V 400 300 200 100 0 0.5 1.0 2.0 1.5 500 400 300 TJ = 25°C 200 0 4 5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 50 A 1.4 1.2 1.0 0.8 0.6 0.4 4 6 5 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 6 1.0 0.9 TJ = 25°C ID = 50 A 0.8 0.7 0.6 VGS = 4.5 V 0.5 0.4 VGS = 10 V 0.3 0.2 0.1 0 200 100 300 500 400 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 1E−01 VGS = 10 V ID = 50 A IDSS, LEAKAGE CURRENT (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE TJ = −55°C 3 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.6 1.8 TJ = 125°C 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.8 3 0 3.0 2.5 2.0 0.2 0 600 100 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 VDS = 3 V 1E−02 1.6 1.4 1.2 1E−03 TJ = 175°C 1E−04 TJ = 150°C TJ = 125°C 1E−05 1.0 TJ = 85°C 1E−06 0.8 TJ = 25°C 1E−07 0.6 0.4 −50 −25 0 25 50 75 100 125 1E−08 150 175 10 12 14 16 18 20 22 24 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NVMTS0D4N04CL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 100K C, CAPACITANCE (pF) CISS 10K COSS 1K VGS = 0 V TJ = 25°C f = 1 MHz 100 CRSS 0.1 1 100 10 9 8 7 6 5 4 QGS 3 QGD VDS = 20 V TJ = 25°C ID = 50 A 2 1 0 0 100 50 250 300 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 350 40 VGS = 0 V td(off) 1E−06 IS, SOURCE CURRENT (A) t, SWITCHING TIME (ns) VGS = 10 V VDS = 20 V ID = 50 A tf tr td(on) 1E−07 10 15 20 25 30 35 40 45 30 TJ = 175°C TJ = 150°C 20 TJ = 125°C TJ = 25°C 10 TJ = −55°C 0 50 0 0.2 0.4 0.6 0.8 1.0 1.2 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 10 ms TJ(initial) = 25°C 100 100 10 0.1 0.5 ms 1 ms TC = 25°C Single Pulse VGS ≤ 10 V 1 IPEAK (A) ID, DRAIN CURRENT(A) 200 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1E−05 1E−08 10 TJ(initial) = 100°C 10 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 1000 100 1 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NVMTS0D4N04CL TYPICAL CHARACTERISTICS 100 Duty Cycle = 0.5 R(t) (°C/W) 10 0.2 0.1 0.05 1 0.02 0.01 0.1 0.01 0.001 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NVMTS0D4N04CLTXG Marking Package Shipping† 0D4N04CL POWER 88 (Pb−Free) TBD / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TDFNW8 8.3x8.4, 2.0P, SINGLE COOL CASE 507AP ISSUE D DATE 29 MAR 2021 GENERIC MARKING DIAGRAM* XXXX A WL Y WW = Specific Device Code = Assembly Location = Wafer Lot Code = Year Code = Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON80534G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TDFNW8 8.3x8.4, 2.0P, SINGLE COOL PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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