NVMTS0D4N04CTXG

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel V(BR)DSS RDS(ON) MAX ID MAX 40 V 0.45 mW @ 10 V 558 A 40 V, 0.45 mW, 558 A D (5−8) NVMTS0D4N04C Features • • • • • • Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Power 88 Package, Industry Standard AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant G (1) S (2−4) N−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 558 A Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Pulsed Drain Current PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1, 2) 394.8 Steady State ID A 79.8 56.4 PD TA = 100°C 2.5 900 A TJ, Tstg −55 to +175 °C IS 203.4 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 70 A) EAS 2236 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Range Source Current (Body Diode) XXXXXXXX AWLYWW W 5.0 IDM TA = 25°C, tp = 10 ms MARKING DIAGRAM 122 TA = 100°C TA = 25°C W 244 TDFNW8 CASE 507AP Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XXX = Device Code (8 A−N characters max) A = Assembly Location WL = 2−digit Wafer Lot Code Y = Year Code WW = Work Week Code ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State Parameter RqJC 0.61 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 30 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 September, 2021 − Rev. 7 1 Publication Order Number: NVMTS0D4N04C/D NVMTS0D4N04C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 7.78 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.0 4.0 −8.49 VGS = 10 V gFS ID = 50 A VDS =15 V, ID = 50 A 0.38 V mV/°C 0.45 300 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 16500 VGS = 0 V, f = 0.1 MHz, VDS = 20 V 8310 pF 390 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A Threshold Gate Charge QG(TH) 40 Gate−to−Source Charge QGS 62.4 Gate−to−Drain Charge QGD Plateau Voltage VGP 4.09 V Gate Resistance RG 0.9 W td(ON) 57 VGS = 10 V, VDS = 20 V; ID = 50 A 251 nC 49.2 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 6 W tf 51.5 ns 201 76.8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.75 TJ = 125°C 0.58 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 121 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 71.4 ns 49.6 336 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMTS0D4N04C TYPICAL CHARACTERISTICS 1000 900 600 5.2 V 500 400 4.8 V 300 4.6 V 200 4.4 V 100 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 800 700 0.5 0 1.0 2.0 1.5 700 600 500 400 TJ = 25°C 300 200 TJ = 125°C 0 2 3 TJ = −55°C 4 5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 50 A 1.6 1.4 1.2 1.0 0.8 0.6 0.4 6 5 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.0 0.8 0.6 VGS = 10 V 0.4 0.2 0 10 VGS = 10 V ID = 50 A 1.0 110 160 210 260 310 360 410 460 510 ID, DRAIN CURRENT (A) TJ = 175°C 4E−04 1.5 60 Figure 4. On−Resistance vs. Drain Current and Gate Voltage IDSS, REVERSE LEAKAGE CURRENT (A) 2.0 6 TJ = 25°C ID = 50 A Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.8 4 800 0 2.5 2.0 0.2 0 VDS = 10 V 100 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 1000 VGS = 6 V to 10 V 900 TJ = 150°C 4E−05 TJ = 125°C 4E−06 TJ = 85°C 4E−07 0.5 TJ = 25°C 4E−08 0 −50 −25 0 25 50 75 100 125 150 175 4E−09 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, REVERSE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 35 NVMTS0D4N04C TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 100K CISS 10K COSS 1K VGS = 0 V TJ = 25°C f = 0.1 MHz 100 0.01 CRSS 0.1 10 1 100 9 8 7 6 QGS 5 QGD 4 3 VDS = 20 V TJ = 25°C ID = 50 A 2 1 0 50 0 150 100 200 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 250 50 t, SWITCHING TIME (ns) VGS = 10 V VDS = 20 V ID = 50 A IS, REVERSE DRAIN CURRENT (A) 1E−05 td(off) 1E−06 tf tr td(on) 1E−07 1E−08 10 10 20 40 30 50 VGS = 0 V TJ = 175°C 10 150°C 25°C 125°C 1 −55°C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 RG, GATE RESISTANCE (W) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 100 0.5 ms 1 ms 10 1 0.1 0.1 IPEAK (A) ID, DRAIN CURRENT(A) 10 ms TC = 25°C Single Pulse VGS ≤ 10 V 100 TJ(initial) = 100°C 10 ms RDS(on) Limit Thermal Limit Package Limit 1 10 TJ(initial) = 25°C 100 10 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NVMTS0D4N04C TYPICAL CHARACTERISTICS 100 Duty Cycle = 0.5 R(t) (°C/W) 10 0.2 0.1 0.05 1 0.02 0.01 0.1 0.01 0.001 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NVMTS0D4N04CTXG Marking Package Shipping† 0D4N04C POWER 88 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TDFNW8 8.3x8.4, 2.0P, SINGLE COOL CASE 507AP ISSUE D DATE 29 MAR 2021 GENERIC MARKING DIAGRAM* XXXX A WL Y WW = Specific Device Code = Assembly Location = Wafer Lot Code = Year Code = Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON80534G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TDFNW8 8.3x8.4, 2.0P, SINGLE COOL PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative