0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
PZT751T1

PZT751T1

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO261-4

  • 描述:

    TRANS PNP 60V 2A SOT223

  • 数据手册
  • 价格&库存
PZT751T1 数据手册
PZT751T1 Preferred Device PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features •High Current: 2.0 A •The SOT-223 Package can be soldered using wave or reflow. •SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die •NPN Complement is PZT651T1 •Pb-Free Package is Available http://onsemi.com SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT COLLECTOR 2, 4 BASE 1 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating EMITTER 3 Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 2.0 Adc Total Power Dissipation @ TA = 25°C(1) Derate above 25°C PD 0.8 6.4 W mW/°C Storage Temperature Range Tstg -65 to 150 °C Junction Temperature TJ 150 °C Rating Symbol Value Unit Thermal Resistance from Junction-to-‐ Ambient in Free Air RqJA 156 °C/W TL 260 °C 10 Sec THERMAL CHARACTERISTICS Maximum Temperature for Soldering Purposes Time in Solder Bath Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR- 4 glass epoxy printed circuit board using minimum recommended footprint. MARKING DIAGRAM TO-261AA CASE 318E STYLE 1 AYW ZT751G G 1 A = Assembly Location Y = Year W = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package PZT751T1 SOT-223 1000 / Tape & Reel Shipping PZT751T1G SOT-223 (Pb-Free) 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 June, 2007 - Rev. 5 1 Publication Order Number: PZT751T1/D PZT751T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 60 - Vdc Collector-Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 80 - Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 - Vdc Base-Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO - 0.1 mAdc Collector-Base Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO - 100 nAdc 75 75 75 40 - - 0.5 0.3 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) hFE - Collector-Emitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base-Emitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) - 1.0 Vdc Base-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) VBE(sat) - 1.2 Vdc fT 75 - MHz Current-Gain-Bandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. http://onsemi.com 2 Vdc PZT751T1 NPN PNP 300 250 270 225 VCE = 2.0 V TJ = 125°C 210 180 25°C 150 120 -55 °C 90 175 125 100 30 25 50 -55 °C 75 50 20 25°C 150 60 0 10 VCE = -2.0 V 200 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 240 TJ = 125°C 0 -10 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) Figure 1. Typical DC Current Gain -20 -50 Figure 2. Typical DC Current Gain PNP -2.0 1.8 -1.8 1.6 -1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) NPN 2.0 1.4 1.2 1.0 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 2.0 V 0.6 0.4 -1.4 -1.2 VBE(sat) @ IC/IB = 10 -1.0 -0.8 VBE(on) @ VCE = 2.0 V -0.6 -0.4 VCE(sat) @ IC/IB = 10 0.2 -0.2 0 VCE(sat) @ IC/IB = 10 0 50 100 200 500 1.0 A IC, COLLECTOR CURRENT (mA) 2.0 A 4.0 A -50 -100 -200 -500 -1.0 A IC, COLLECTOR CURRENT (mA) -2.0 A -4.0 A Figure 4. On Voltages NPN VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. On Voltages 1.0 PNP -1.0 -0.9 0.9 0.8 TJ = 25°C -0.8 TJ = 25°C 0.7 -0.7 -0.6 0.6 0.5 -0.5 0.4 0.3 -100 -200 -500 -1.0 A -2.0 A -4.0 A IC, COLLECTOR CURRENT (mA) -0.4 IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A IC = -500 mA -0.3 0.2 IC = -2.0 A -0.2 0.1 -0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 IC = -10 mA IC = -100 mA 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IB, BASE CURRENT (mA) -50 -100 -200 -500 Figure 6. Collector Saturation Region Figure 5. Collector Saturation Region http://onsemi.com 3 PZT751T1 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D b1 4 HE E 1 2 3 b e1 e 0.08 (0003) C q A A1 DIM A A1 b b1 c D E e e1 L1 HE q STYLE 1: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10° - MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT:  Literature Distribution Center for ON Semiconductor  P.O. Box 5163, Denver, Colorado 80217 USA  Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free  USA/Canada Europe, Middle East and Africa Technical Support:  Phone: 421 33 790 2910 Japan Customer Focus Center  Phone: 81-3-5773-3850 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative PZT751T1/D
PZT751T1 价格&库存

很抱歉,暂时无法提供与“PZT751T1”相匹配的价格&库存,您可以联系我们找货

免费人工找货