PZT751
PNP Silicon Planar
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT−223 package which is designed for medium power surface
mount applications.
Features
• High Current
• The SOT−223 Package can be soldered using wave or reflow.
• SOT−223 Package Ensures Level Mounting, Resulting in
•
•
•
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SOT−223 PACKAGE HIGH CURRENT
NPN SILICON TRANSISTOR
SURFACE MOUNT
Improved Thermal Conduction, and Allows Visual Inspection of
Soldered Joints. The Formed Leads Absorb Thermal Stress During
Soldering, Eliminating the Possibility of Damage to the Die
NPN Complement is PZT651T1G
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
4
1
2
3
SOT−223
CASE 318E
STYLE 1
COLLECTOR 2, 4
BASE
1
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−60
Vdc
Collector−Base Voltage
VCBO
−80
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
Collector Current
IC
−2.0
Adc
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
PD
Storage Temperature Range
Tstg
−65 to 150
°C
Junction Temperature
TJ
150
°C
Rating
0.8
6.4
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
AYW
ZT751G
G
1
A
Y
W
G
Symbol
Value
Unit
RqJA
156
°C/W
TL
260
°C
10
Sec
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
THERMAL CHARACTERISTICS
Thermal Resistance from Junction−to−
Ambient in Free Air
MARKING DIAGRAM
W
mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum
recommended footprint.
Rating
EMITTER 3
Package
Shipping†
PZT751T1G
SOT−223
(Pb−Free)
1,000 / Tape & Reel
SPZT751T1G
SOT−223
(Pb−Free)
1,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 9
1
Publication Order Number:
PZT751T1/D
PZT751
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Max
−60
−
−80
−
−5.0
−
−
−0.1
−
−100
75
75
75
40
−
−
−
−
−
−
−0.5
−0.3
−
−1.0
−
−1.2
75
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
Base−Emitter Cutoff Current
(VEB = −4.0 Vdc)
IEBO
Collector−Base Cutoff Current
(VCB = −80 Vdc, IE = 0)
ICBO
Vdc
Vdc
Vdc
mAdc
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = −50 mAdc, VCE = −2.0 Vdc)
(IC = −500 mAdc, VCE = −2.0 Vdc)
(IC = −1.0 Adc, VCE = −2.0 Vdc)
(IC = −2.0 Adc, VCE = −2.0 Vdc)
hFE
Collector−Emitter Saturation Voltages
(IC = −2.0 Adc, IB = −200 mAdc)
(IC = −1.0 Adc, IB = −100 mAdc)
VCE(sat)
Base−Emitter Voltages
(IC = −1.0 Adc, VCE = −2.0 Vdc)
VBE(on)
Base−Emitter Saturation Voltage
(IC = −1.0 Adc, IB = −100 mAdc)
VBE(sat)
Current−Gain−Bandwidth
(IC = −50 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
−
Vdc
Vdc
Vdc
fT
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
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2
MHz
PZT751
TYPICAL CHARACTERISTICS
250
225
-2.0
TJ = 125°C
-1.8
VCE = -2.0 V
-1.6
V, VOLTAGE (VOLTS)
175
150
25°C
125
100
-55°C
75
-1.4
-1.2
-0.8
VBE(on) @ VCE = 2.0 V
-0.6
-0.4
25
-0.2
0
-10 -20
VBE(sat) @ IC/IB = 10
-1.0
50
VCE(sat) @ IC/IB = 10
0
-50
-50 -100 -200 -500 -1.0 A -2.0 A -4.0 A
IC, COLLECTOR CURRENT (mA)
-100
-200
-500 -1.0 A
IC, COLLECTOR CURRENT (mA)
Figure 2. On Voltages
Figure 1. Typical DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
200
-1.0
-0.9
TJ = 25°C
-0.8
-0.7
-0.6
-0.5
-0.4
IC = -500 mA
-0.3
IC = -2.0 A
-0.2
-0.1
IC = -10 mA
IC = -100 mA
0
-0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
IB, BASE CURRENT (mA)
-50 -100-200 -500
Figure 3. Collector Saturation Region
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3
-2.0 A
-4.0 A
PZT751
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
4
HE
E
1
2
3
b
e1
e
0.08 (0003)
A1
C
q
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
DIM
MIN
NOM
MAX
MIN
NOM
A
1.50
1.63
1.75
0.060
0.064
A1
0.02
0.06
0.10
0.001
0.002
b
0.60
0.75
0.89
0.024
0.030
b1
2.90
3.06
3.20
0.115
0.121
c
0.24
0.29
0.35
0.009
0.012
D
6.30
6.50
6.70
0.249
0.256
E
3.30
3.50
3.70
0.130
0.138
e
2.20
2.30
2.40
0.087
0.091
e1
0.85
0.94
1.05
0.033
0.037
L
0.20
−−−
−−−
0.008
−−−
L1
1.50
1.75
2.00
0.060
0.069
HE
6.70
7.00
7.30
0.264
0.276
0°
10°
0°
−
−
q
STYLE 1:
PIN 1.
2.
3.
4.
L1
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
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4
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For additional information, please contact your local
Sales Representative
PZT751T1/D