SM1MA142WKT1G

M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, Common Cathode Silicon Dual Switching Diode http://onsemi.com This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low power surface mount applications. SC−70 (SOT−323) CASE 419 STYLE 5 Features      Fast trr, < 3.0 ns Low CD, < 2.0 pF AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* CATHODE 3 MAXIMUM RATINGS (TA = 25C) 1 Rating Symbol Reverse Voltage M1MA141WKT1G M1MA142WKT1G, SM1MA142WKT1G VR Peak Reverse Voltage M1MA141WKT1G M1MA142WKT1G, SM1MA142WKT1G VRM Forward Current Single Dual IF Peak Forward Current Single Dual Peak Forward Surge Current M1MA141WKT1G M1MA142WKT1G, SM1MA142WKT1G IFM IFSM (Note 1) Value Unit Vdc 40 80 225 340 500 750 mAdc Mx = Device Code x = T for 141 U for 142 M = Date Code* G = Pb−Free Package mAdc (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 C Storage Temperature Tstg −55 to + 150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 SEC *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 9 Mx M G G mAdc 100 150 THERMAL CHARACTERISTICS Rating MARKING DIAGRAM Vdc 40 80 ANODE 2 1 ORDERING INFORMATION Package Shipping† M1MA141WKT1G SC−70 (Pb−Free) 3,000 / Tape & Reel M1MA142WKT1G SC−70 (Pb−Free) 3,000 / Tape & Reel SM1MA142WKT1G SC−70 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: M1MA141WKT1/D M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Reverse Voltage Leakage Current M1MA141WKT1G M1MA142WKT1G, SM1MA142WKT1G Condition Symbol VR = 35 V VR = 75 V IR Min Max − − 0.1 0.1 − 1.2 40 80 − − Unit mAdc Forward Voltage IF = 100 mA VF Reverse Breakdown Voltage M1MA141WKT1G M1MA142WKT1G, SM1MA142WKT1G IR = 100 mA VR VR = 0, f = 1.0 MHz CD − 2.0 pF IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR trr (Note 2) − 3.0 ns Diode Capacitance Reverse Recovery Time (Figure 1) 2. trr Test Circuit http://onsemi.com 2 Vdc Vdc M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp trr IF t t 10% RL A Irr = 0.1 IR 90% VR IF = 10 mA VR = 6 V RL = 100 W tp = 2 ms tr = 0.35 ns Figure 1. Recovery Time Equivalent Test Circuit 10 100 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -40C 1.0 TA = 25C TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0 1.2 10 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Reverse Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150C 0.64 0.6 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Diode Capacitance http://onsemi.com 3 8 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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