2SD1275

Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type Darlington 0.7±0.1 For power amplification Complementary to 2SB949 and 2SB949A 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm q q 16.7±0.3 q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 60 80 60 80 5 4 2 35 2 150 –55 to +150 Unit V 7.5±0.2 s Features φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1275 2SD1275A 2SD1275 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 –0.1 +0.2 2.54±0.25 5.08±0.5 emitter voltage 2SD1275A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W B 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C ˚C ˚C E s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1275 2SD1275A 2SD1275 2SD1275A 2SD1275 2SD1275A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf * Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = –8mA, VCC = 50V min typ max 1 1 2 2 2 Unit mA mA mA V 60 80 1000 2000 10000 2.8 2.5 20 0.5 4 1 Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 V V MHz µs µs µs Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE2 1 Power Transistors PC — Ta 50 5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 2SD1275, 2SD1275A IC — VCE 10 VCE=4V IC — VBE Collector power dissipation PC (W) Collector current IC (A) (1) 30 Collector current IC (A) 40 4 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA 8 25˚C TC=100˚C 6 –25˚C 3 20 2 4 10 (2) (3) (4) 1 2 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 0 0 0.8 1.6 2.4 3.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=250 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=–25˚C 100˚C 25˚C 105 hFE — IC 10000 Cob — VCB Collector output capacitance Cob (pF) VCE=4V IE=0 f=1MHz TC=25˚C Forward current transfer ratio hFE 3000 1000 300 100 30 10 3 1 0.1 104 TC=100˚C 103 25˚C –25˚C 102 0.1 0.3 1 3 10 10 0.01 0.03 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 10 ICP 3 IC 1 0.3 0.1 0.03 0.01 1 3 10 30 DC 1ms t=10ms 10 (2) 1 2SD1275A 2SD1275 10–1 100 300 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2